ES8401284A1 - Un dispositivo semiconductor. - Google Patents

Un dispositivo semiconductor.

Info

Publication number
ES8401284A1
ES8401284A1 ES519470A ES519470A ES8401284A1 ES 8401284 A1 ES8401284 A1 ES 8401284A1 ES 519470 A ES519470 A ES 519470A ES 519470 A ES519470 A ES 519470A ES 8401284 A1 ES8401284 A1 ES 8401284A1
Authority
ES
Spain
Prior art keywords
radiation beams
generating
semiconductor device
direct
dor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES519470A
Other languages
English (en)
Other versions
ES519470A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES8401284A1 publication Critical patent/ES8401284A1/es
Publication of ES519470A0 publication Critical patent/ES519470A0/es
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0217—Removal of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Optical Head (AREA)

Abstract

DISPOSITIVO SEMICONDUCTOR PARA GENERAR AL MENOS DOS HACES DE RADIACION DE FRECUENCIA PREFERIBLEMENTE DIFERENTE.CONSTA DE UN SUSTRATO SEMICONDUCTOR (3) QUE COMPRENDE UNA PRIMERA SUPERFICIE PRINCIPAL (4) Y UNA SEGUNDA SUPERFICIE PRINCIPAL (5), LAS CUALES SON SUSTANCIALMENTE PARALELAS; DE UNA PRIMERA ESTRUCTURA EN CAPAS (6, 7, 8, 9) DESARROLLADA SOBRE LA PRIMERA SUPERFICIE PRINCIPAL (4), QUE COMPRENDE UNA PRIMERA UNION PN (14); Y DE UNA SEGUNDA ESTRUCTURA EN CAPAS (10, 11, 12, 13) DESARROLLADA SOBRE LA SUPERFICIE PRINCIPAL OPUESTA (5) DEL SUSTRATO, QUE COMPRENDEUNA SEGUNDA UNION PN (15). LA DISTANCIA ENTRE LAS DOS CAPAS ACTIVAS (7, 11) EN LAS QUE SE GENERA LA RADIACION, ESTA DEFINIDA POR EL ESPESOR TOTAL DE LAS CAPAS INTERMEDI
ES519470A 1982-02-04 1983-02-02 Un dispositivo semiconductor. Granted ES519470A0 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8200414A NL8200414A (nl) 1982-02-04 1982-02-04 Halfgeleiderinrichting voor het opwekken van ten minste twee stralingsbundels, en werkwijze ter vervaardiging daarvan.

Publications (2)

Publication Number Publication Date
ES8401284A1 true ES8401284A1 (es) 1983-11-16
ES519470A0 ES519470A0 (es) 1983-11-16

Family

ID=19839193

Family Applications (1)

Application Number Title Priority Date Filing Date
ES519470A Granted ES519470A0 (es) 1982-02-04 1983-02-02 Un dispositivo semiconductor.

Country Status (5)

Country Link
EP (1) EP0086008A3 (es)
JP (1) JPS58134492A (es)
AU (1) AU1087283A (es)
ES (1) ES519470A0 (es)
NL (1) NL8200414A (es)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4747110A (en) * 1985-02-13 1988-05-24 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device capable of emitting laser beams of different wavelengths
JPS61287289A (ja) * 1985-06-14 1986-12-17 Sharp Corp 光メモリ用半導体レ−ザ装置
US4843031A (en) * 1987-03-17 1989-06-27 Matsushita Electric Industrial Co., Ltd. Method of fabricating compound semiconductor laser using selective irradiation
DE3728568A1 (de) * 1987-08-27 1989-03-16 Telefunken Electronic Gmbh Halbleiterlaseranordnung
US6136623A (en) * 1998-05-06 2000-10-24 Xerox Corporation Multiple wavelength laser arrays by flip-chip bonding
CN106716748B (zh) 2014-09-23 2020-09-04 赫普塔冈微光有限公司 紧凑、功率有效的堆叠宽带光学发射器

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4873090A (es) * 1971-12-27 1973-10-02
NL8101409A (nl) * 1981-03-23 1982-10-18 Philips Nv Halfgeleiderlaser met tenminste twee stralingsbundels, en werkwijze ter vervaardiging daarvan.

Also Published As

Publication number Publication date
AU1087283A (en) 1983-08-11
ES519470A0 (es) 1983-11-16
NL8200414A (nl) 1983-09-01
JPS58134492A (ja) 1983-08-10
EP0086008A3 (en) 1985-04-10
EP0086008A2 (en) 1983-08-17

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 19971001