ES8401678A1 - Un sistema de pulverizacion catodica para magnetron. - Google Patents
Un sistema de pulverizacion catodica para magnetron.Info
- Publication number
- ES8401678A1 ES8401678A1 ES520264A ES520264A ES8401678A1 ES 8401678 A1 ES8401678 A1 ES 8401678A1 ES 520264 A ES520264 A ES 520264A ES 520264 A ES520264 A ES 520264A ES 8401678 A1 ES8401678 A1 ES 8401678A1
- Authority
- ES
- Spain
- Prior art keywords
- plate
- backing plate
- catch
- channels
- plates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3497—Temperature of target
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Microwave Tubes (AREA)
- Particle Accelerators (AREA)
- Resistance Welding (AREA)
- Coating By Spraying Or Casting (AREA)
Abstract
SISTEMA DE PULVERIZACION CATODICA PARA MAGNETRON. CONSISTE EN CONECTAR EL ANTICATODO (8) A UNA PLACA DE MATERIAL A PULVERIZAR, ALUMINIO DE 1 CM DE ESPESOR, CONTRA LA PLACA DE RESPALDO (13) PROPORCIONANDO ADEMAS, A LA PLACA DE RESPALDO, UNA CAPA DE MATERIAL DE SOLDADURA QUE SE ADHIERE REALMENTE A DICHA PLACA DE RESPALDO (13), NO ADHIRIENDOSE AL ANTICATODO (8). EL BORDE (9) DEL ANTICATODO (8) ESTA CONECTADO CONTRA EL BORDE (11) DE UNA ABERTURA (12) EN LA AMPOLLA (1), DE UNA MANERA ESTANCA A LOS GASES, COMPRENDIENDO DICHA PLACA DE RESPALDO UNA PLURALIDADDE CANALES (17) QUE SE ABREN A LA CARA DE CONTACTO DEL ANTICATODO CON LA PLACA DE RESPALDO, ESTANDO CONECTADA LA PLACA DE RESPALDO CONTRA EL ANTICATODO POR SUCCION A VACIO POR LA VIA DE DICHOS CANALES. SE REALIZA CON PLACAS DE FORMA CUADRADA O RECTANGULAR Y SE TRABAJA ENTRE 70 GC Y 100 GC PARA TEMPERATURA DE SOLDADURA. MEJORA LA TRANSMISION DE CALOR ENTRE LAS DOS PLACAS PARA LA FABRICACION DE VEHICULOS DE INFORMACION OPTICA.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8200902A NL8200902A (nl) | 1982-03-05 | 1982-03-05 | Magnetron-kathodesputtersysteem. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ES520264A0 ES520264A0 (es) | 1983-12-01 |
| ES8401678A1 true ES8401678A1 (es) | 1983-12-01 |
Family
ID=19839373
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES520264A Expired ES8401678A1 (es) | 1982-03-05 | 1983-03-03 | Un sistema de pulverizacion catodica para magnetron. |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US4392939A (es) |
| EP (1) | EP0088463B1 (es) |
| JP (1) | JPS58164783A (es) |
| AT (1) | ATE22752T1 (es) |
| AU (1) | AU560381B2 (es) |
| CA (1) | CA1192318A (es) |
| DE (1) | DE3366772D1 (es) |
| ES (1) | ES8401678A1 (es) |
| NL (1) | NL8200902A (es) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4657654A (en) * | 1984-05-17 | 1987-04-14 | Varian Associates, Inc. | Targets for magnetron sputter device having separate confining magnetic fields to separate targets subject to separate discharges |
| US4595482A (en) * | 1984-05-17 | 1986-06-17 | Varian Associates, Inc. | Apparatus for and the method of controlling magnetron sputter device having separate confining magnetic fields to separate targets subject to separate discharges |
| US4606806A (en) * | 1984-05-17 | 1986-08-19 | Varian Associates, Inc. | Magnetron sputter device having planar and curved targets |
| US4569746A (en) * | 1984-05-17 | 1986-02-11 | Varian Associates, Inc. | Magnetron sputter device using the same pole piece for coupling separate confining magnetic fields to separate targets subject to separate discharges |
| US5215639A (en) * | 1984-10-09 | 1993-06-01 | Genus, Inc. | Composite sputtering target structures and process for producing such structures |
| US4597847A (en) * | 1984-10-09 | 1986-07-01 | Iodep, Inc. | Non-magnetic sputtering target |
| JP2934711B2 (ja) * | 1989-12-07 | 1999-08-16 | カシオ計算機株式会社 | スパッタ装置 |
| KR950000906B1 (ko) * | 1991-08-02 | 1995-02-03 | 니찌덴 아넬바 가부시기가이샤 | 스퍼터링장치 |
| US5458759A (en) * | 1991-08-02 | 1995-10-17 | Anelva Corporation | Magnetron sputtering cathode apparatus |
| US5374343A (en) * | 1992-05-15 | 1994-12-20 | Anelva Corporation | Magnetron cathode assembly |
| US5286361A (en) * | 1992-10-19 | 1994-02-15 | Regents Of The University Of California | Magnetically attached sputter targets |
| US5414588A (en) * | 1993-09-20 | 1995-05-09 | The Regents Of The University Of California | High performance capacitors using nano-structure multilayer materials fabrication |
| US6033483A (en) * | 1994-06-30 | 2000-03-07 | Applied Materials, Inc. | Electrically insulating sealing structure and its method of use in a high vacuum physical vapor deposition apparatus |
| EP0787819B1 (de) * | 1996-01-31 | 1999-12-22 | LEYBOLD MATERIALS GmbH | Sputtertarget aus einer Zinn- oder Zinn-Basislegierung |
| EP0787818A1 (de) * | 1996-01-31 | 1997-08-06 | LEYBOLD MATERIALS GmbH | Sputtertarget aus einer Zinn- oder Zinn-Basislegierung |
| JP2000133693A (ja) * | 1998-08-19 | 2000-05-12 | Shibaura Mechatronics Corp | 真空装置用駆動機構および真空装置 |
| JP3568845B2 (ja) * | 1999-11-09 | 2004-09-22 | 株式会社日鉱マテリアルズ | スパッタリングターゲット/バッキングプレート組立体の矯正方法及び同矯正装置 |
| US20050145487A1 (en) * | 2002-04-15 | 2005-07-07 | Michael Geisler | Coating installation |
| DE10216671A1 (de) * | 2002-04-15 | 2003-12-18 | Applied Films Gmbh & Co Kg | Beschichtungsanlage |
| US20080067058A1 (en) * | 2006-09-15 | 2008-03-20 | Stimson Bradley O | Monolithic target for flat panel application |
| KR100899355B1 (ko) * | 2007-11-15 | 2009-05-27 | 한국과학기술연구원 | 플라스마 증착 장치 및 방법 |
| KR20130017314A (ko) * | 2011-08-10 | 2013-02-20 | 삼성디스플레이 주식회사 | 스퍼터링 장치 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR846557A (fr) * | 1938-04-14 | 1939-09-20 | Procédé pour métalliser des articles métalliques par pulvérisation cathodique | |
| US3616449A (en) * | 1970-03-30 | 1971-10-26 | Bendix Corp | Sputtering anode |
| US4204936A (en) * | 1979-03-29 | 1980-05-27 | The Perkin-Elmer Corporation | Method and apparatus for attaching a target to the cathode of a sputtering system |
| US4297190A (en) * | 1979-05-14 | 1981-10-27 | Western Electric Co., Inc. | Method for removing heat from a workpiece during processing in a vacuum chamber |
| US4274476A (en) * | 1979-05-14 | 1981-06-23 | Western Electric Company, Inc. | Method and apparatus for removing heat from a workpiece during processing in a vacuum chamber |
| US4272355A (en) * | 1980-02-26 | 1981-06-09 | International Business Machines Corporation | Process of bonding sputtering targets to target electrodes |
| US4341810A (en) * | 1981-08-27 | 1982-07-27 | Dynagel Incorporated | Gelled gelatin food product prepared from non-gelled aqueous gelatin compositions |
-
1982
- 1982-03-05 NL NL8200902A patent/NL8200902A/nl not_active Application Discontinuation
- 1982-04-19 US US06/369,948 patent/US4392939A/en not_active Expired - Fee Related
-
1983
- 1983-02-23 EP EP83200273A patent/EP0088463B1/en not_active Expired
- 1983-02-23 AT AT83200273T patent/ATE22752T1/de not_active IP Right Cessation
- 1983-02-23 DE DE8383200273T patent/DE3366772D1/de not_active Expired
- 1983-03-02 JP JP58032998A patent/JPS58164783A/ja active Granted
- 1983-03-03 AU AU12032/83A patent/AU560381B2/en not_active Ceased
- 1983-03-03 CA CA000422768A patent/CA1192318A/en not_active Expired
- 1983-03-03 ES ES520264A patent/ES8401678A1/es not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| ATE22752T1 (de) | 1986-10-15 |
| ES520264A0 (es) | 1983-12-01 |
| EP0088463A1 (en) | 1983-09-14 |
| JPS58164783A (ja) | 1983-09-29 |
| DE3366772D1 (en) | 1986-11-13 |
| NL8200902A (nl) | 1983-10-03 |
| CA1192318A (en) | 1985-08-20 |
| JPH0214425B2 (es) | 1990-04-09 |
| EP0088463B1 (en) | 1986-10-08 |
| AU1203283A (en) | 1983-09-08 |
| US4392939A (en) | 1983-07-12 |
| AU560381B2 (en) | 1987-04-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FD1A | Patent lapsed |
Effective date: 19970519 |