ES8501168A1 - Perfeccionamientos introducidos en un aparato de deposicion por descarga incandescente - Google Patents

Perfeccionamientos introducidos en un aparato de deposicion por descarga incandescente

Info

Publication number
ES8501168A1
ES8501168A1 ES528254A ES528254A ES8501168A1 ES 8501168 A1 ES8501168 A1 ES 8501168A1 ES 528254 A ES528254 A ES 528254A ES 528254 A ES528254 A ES 528254A ES 8501168 A1 ES8501168 A1 ES 8501168A1
Authority
ES
Spain
Prior art keywords
deposition apparatus
glow discharge
cathode assembly
discharge deposition
luminescent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES528254A
Other languages
English (en)
Other versions
ES528254A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of ES528254A0 publication Critical patent/ES528254A0/es
Publication of ES8501168A1 publication Critical patent/ES8501168A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

SISTEMA DE CATODO DE CORRIENTE ARRIBA O DE PREDEPOSICION PARA SER USADO CON UN APARATO DE DEPOSICION DE DESCARGA LUMINISCENTE, ESTANDO DICHO APARATO ADAPTADO PARA LA PRODUCCION CONTINUA DE DISPOSITIVOS FOTOVOLTAICOS DE GRAN AREA.CONSISTE EN UN MEDIO DE DESCARGA LUMINISCENTE SITUADO CORRIENTE ARRIBA DE LA REGION DE PLASMA DE DEPOSICION, EL CUAL ESTA ADAPTADO PARA DESARROLLAR UNA REGION DE PLASMA CORRIENTE ARRIBA, SIENDO LA PELICULA SEMICONDUCTORA DEPOSITADA SOBRE LA SUPERFICIE DEL SUSTRATO DE UNA COMPOSICION QUIMICA ESENCIALMENTE HOMOGENEA Y UNIFORME A TRAVES DE TODA LA SUPERFICIE DEL SUSTRATO DE AREA GRANDE.
ES528254A 1982-12-22 1983-12-21 Perfeccionamientos introducidos en un aparato de deposicion por descarga incandescente Expired ES8501168A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/452,224 US4513684A (en) 1982-12-22 1982-12-22 Upstream cathode assembly

Publications (2)

Publication Number Publication Date
ES528254A0 ES528254A0 (es) 1984-11-01
ES8501168A1 true ES8501168A1 (es) 1984-11-01

Family

ID=23795607

Family Applications (1)

Application Number Title Priority Date Filing Date
ES528254A Expired ES8501168A1 (es) 1982-12-22 1983-12-21 Perfeccionamientos introducidos en un aparato de deposicion por descarga incandescente

Country Status (10)

Country Link
US (1) US4513684A (es)
EP (1) EP0118644A1 (es)
JP (1) JPS59155123A (es)
KR (1) KR920006893B1 (es)
AU (1) AU564627B2 (es)
BR (1) BR8307044A (es)
CA (1) CA1214253A (es)
ES (1) ES8501168A1 (es)
MX (1) MX154312A (es)
ZA (2) ZA839419B (es)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4483883A (en) * 1982-12-22 1984-11-20 Energy Conversion Devices, Inc. Upstream cathode assembly
DE3427057A1 (de) * 1984-07-23 1986-01-23 Standard Elektrik Lorenz Ag, 7000 Stuttgart Anlage zum herstellen von halbleiter-schichtstrukturen durch epitaktisches wachstum
JPH0722127B2 (ja) * 1985-02-20 1995-03-08 株式会社日立製作所 反応・処理装置内の清浄化および反応・処理用気相物質の純化方法、および反応・処理装置
US4601260A (en) * 1985-04-01 1986-07-22 Sovonics Solar Systems Vertical semiconductor processor
DE3706482A1 (de) * 1986-02-28 1987-09-03 Politechnika Warszawska Verfahren und vorrichtungen zur herstellung von diffusionsoberflaechenschichten auf metallenen werkstuecken durch glimmentladung
DE3752208T2 (de) * 1986-11-10 1998-12-24 Semiconductor Energy Laboratory Co., Ltd., Atsugi, Kanagawa Durch Mikrowellen gesteigertes CVD-Verfahren und -Gerät
US6677001B1 (en) * 1986-11-10 2004-01-13 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD method and apparatus
US4926791A (en) * 1987-04-27 1990-05-22 Semiconductor Energy Laboratory Co., Ltd. Microwave plasma apparatus employing helmholtz coils and ioffe bars
US4870030A (en) * 1987-09-24 1989-09-26 Research Triangle Institute, Inc. Remote plasma enhanced CVD method for growing an epitaxial semiconductor layer
KR930011413B1 (ko) * 1990-09-25 1993-12-06 가부시키가이샤 한도오따이 에네루기 겐큐쇼 펄스형 전자파를 사용한 플라즈마 cvd 법
GB2264957B (en) * 1992-03-12 1995-09-20 Bell Communications Res Deflected flow in a chemical vapor deposition cell
DE4324320B4 (de) * 1992-07-24 2006-08-31 Fuji Electric Co., Ltd., Kawasaki Verfahren und Vorrichtung zur Herstellung einer als dünne Schicht ausgebildeten fotovoltaischen Umwandlungsvorrichtung

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE7700229L (sv) * 1976-01-22 1977-07-23 Western Electric Co Forfarande for beleggning av substrat genom utfellning fran ett plasma
US4301765A (en) * 1979-01-10 1981-11-24 Siemens Aktiengesellschaft Apparatus for generating layers on a carrier foil
US4282267A (en) * 1979-09-20 1981-08-04 Western Electric Co., Inc. Methods and apparatus for generating plasmas
US4262631A (en) * 1979-10-01 1981-04-21 Kubacki Ronald M Thin film deposition apparatus using an RF glow discharge
JPS5934421B2 (ja) * 1979-11-29 1984-08-22 住友電気工業株式会社 薄膜製造法
CA1159012A (en) * 1980-05-02 1983-12-20 Seitaro Matsuo Plasma deposition apparatus
US4400409A (en) * 1980-05-19 1983-08-23 Energy Conversion Devices, Inc. Method of making p-doped silicon films
JPS56165371A (en) * 1980-05-26 1981-12-18 Shunpei Yamazaki Semiconductor device
JPS5756923A (en) * 1980-09-23 1982-04-05 Mitsubishi Electric Corp Manufacture of thin film
US4379181A (en) * 1981-03-16 1983-04-05 Energy Conversion Devices, Inc. Method for plasma deposition of amorphous materials
JPS5833829A (ja) * 1981-08-24 1983-02-28 Toshiba Corp 薄膜形成装置
US4462333A (en) * 1982-10-27 1984-07-31 Energy Conversion Devices, Inc. Process gas introduction, confinement and evacuation system for glow discharge deposition apparatus

Also Published As

Publication number Publication date
US4513684A (en) 1985-04-30
EP0118644A1 (en) 1984-09-19
JPS59155123A (ja) 1984-09-04
ZA839419B (en) 1984-08-29
CA1214253A (en) 1986-11-18
MX154312A (es) 1987-06-30
AU2245383A (en) 1984-06-28
KR840007319A (ko) 1984-12-06
KR920006893B1 (ko) 1992-08-21
AU564627B2 (en) 1987-08-20
JPH0576172B2 (es) 1993-10-22
ES528254A0 (es) 1984-11-01
ZA839420B (en) 1984-08-29
BR8307044A (pt) 1984-07-31

Similar Documents

Publication Publication Date Title
UY23527A1 (es) Metodo para revestir sustratos de vidrio
ES2099068T3 (es) Celula solar de pelicula de silicio depositada.
ATE302250T1 (de) Elektrolumineszenzmaterial
FR2399130A1 (fr) Dispositif semi-conducteur photovoltaique
ES2141713T3 (es) Formulaciones estabilizadas de liberacion controlada recubiertas de una capa de polimero acrilico.
ES478454A1 (es) Un metodo de preparacion de una pelicula semiconductora.
ATE105597T1 (de) Procede de metallisation sous vide permettant le depot d'un compose organo-metallique sur un substrat.
ES2092247T3 (es) Un captador de efecto hall.
ES480925A1 (es) Un proceso para incorporar pistas de aluminio sobre un cuer-po semiconductor.
BE751247A (fr) Articles en graphite enrobes de carbure de silicium et leur procede de fabrication
BR8307045A (pt) Aperfeicoamento em aparelho de deposicao a descarga luminescente,aperfeicoamento em aparelho apropriado para depositar material semicondutor sobre um substrato,processo de depositar uma camada semicondutora uniforme atraves da inteira superficie de um substrato,e,processo para a deposicao a alta velocidade de material semicondutor amorfo em aparelhos de deposicao
ES2031098T3 (es) Procedimiento y dispositivo para la configuracion de una capa mediante proceso quimico de plasma.
JPS51147186A (en) Semiconductor device
JPS5334382A (en) Fluorescent lamp
JPS52131484A (en) Semiconductor device
FR2228300A1 (en) High speed, high carrier density switching in integrated circuit - involves inclusion of high frequency thyristors and rectifiers
NL7802009A (nl) Chemische dampafzetting van een laag van amorfe fosfor-stikstof-zuurstof samenstelling, etsen van een dergelijke laag, materiaal van dergelijke samenstelling en halfgeleiderinrichting voorzien van dergelijke laag.
JPS5418669A (en) Manufacture of semiconductor device
ES8102418A1 (es) Un transistor de efecto de campo de union
JPS53109487A (en) Manufacture for semiconductor device
FR2033109A5 (en) Thermoplastic powder deposition in electro - static copying
ES8707377A1 (es) Procedimiento litografico para la fabricacion de dispositi- vos semiconductores
JPS52151555A (en) Manufacture of luminous screen
JPS51137370A (en) Electron line detector
FR2118846A1 (en) Semiconductor detector for radiation - having separated semiconducting zones of opposite type on base material

Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 20020727