ES8707630A1 - Perfeccionamientos introducidos en un aparato adaptado para depositar un material semiconductor en un substrato - Google Patents

Perfeccionamientos introducidos en un aparato adaptado para depositar un material semiconductor en un substrato

Info

Publication number
ES8707630A1
ES8707630A1 ES544758A ES544758A ES8707630A1 ES 8707630 A1 ES8707630 A1 ES 8707630A1 ES 544758 A ES544758 A ES 544758A ES 544758 A ES544758 A ES 544758A ES 8707630 A1 ES8707630 A1 ES 8707630A1
Authority
ES
Spain
Prior art keywords
substrate
deposition
process gases
upstream
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES544758A
Other languages
English (en)
Other versions
ES544758A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/452,224 external-priority patent/US4513684A/en
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of ES8707630A1 publication Critical patent/ES8707630A1/es
Publication of ES544758A0 publication Critical patent/ES544758A0/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

APARATO PARA DEPOSITAR MATERIAL SEMICONDUCTOR SOBRE UN SUSTRATO AVANZANDO CONTINUAMENTE. POR UN TUBO (36) CON ORIFICIOS (36A) SE ALIMENTA UNA MEZCLA GASEOSA, PREFERENTEMENTE SILANO E HIDROGENO, A UNA CAMARA (62), LIMITADA POR UN CATODO (34) SUPERIORMENTE Y UNA PLACA (29) INFERIORMENTE, ENTRE LAS CUALES SE ESTABLECE UN PLASMA DE DESCARGA LUMINISCENTE CUANDO SE ENERGIZA LA PLACA (34) A UN VOLTAJE SUFICIENTE. LA ENVOLTURA (35) SE ENCUENTRA CONECTADA A TIERRA. EN OTRA VARIANTE SE DISPONE UN PRECATODO ENERGIZADO POR MICROONDAS.
ES544758A 1982-12-22 1985-07-01 Perfeccionamientos introducidos en un aparato adaptado para depositar un material semiconductor en un substrato Expired ES8707630A1 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/452,224 US4513684A (en) 1982-12-22 1982-12-22 Upstream cathode assembly
US06/549,054 US4483883A (en) 1982-12-22 1983-11-07 Upstream cathode assembly

Publications (2)

Publication Number Publication Date
ES8707630A1 true ES8707630A1 (es) 1987-08-01
ES544758A0 ES544758A0 (es) 1987-08-01

Family

ID=27036702

Family Applications (2)

Application Number Title Priority Date Filing Date
ES528255A Expired ES8603114A1 (es) 1982-12-22 1983-12-21 Aparato perfeccionado de deposicion por descarga luminiscente, utilizable particularmente en la produccion de dispositivos fotovoltaicos, y metodo correspondiente.
ES544758A Expired ES8707630A1 (es) 1982-12-22 1985-07-01 Perfeccionamientos introducidos en un aparato adaptado para depositar un material semiconductor en un substrato

Family Applications Before (1)

Application Number Title Priority Date Filing Date
ES528255A Expired ES8603114A1 (es) 1982-12-22 1983-12-21 Aparato perfeccionado de deposicion por descarga luminiscente, utilizable particularmente en la produccion de dispositivos fotovoltaicos, y metodo correspondiente.

Country Status (10)

Country Link
US (1) US4483883A (es)
EP (1) EP0118643B1 (es)
JP (1) JPS59155124A (es)
KR (1) KR840007320A (es)
AU (1) AU2245783A (es)
BR (1) BR8307045A (es)
CA (1) CA1248210A (es)
DE (1) DE3379509D1 (es)
ES (2) ES8603114A1 (es)
IN (1) IN159704B (es)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3316693A1 (de) * 1983-05-06 1984-11-08 Leybold-Heraeus GmbH, 5000 Köln Verfahren zum herstellen von amorphen kohlenstoffschichten auf substraten und durch das verfahren beschichtete substrate
US4678679A (en) * 1984-06-25 1987-07-07 Energy Conversion Devices, Inc. Continuous deposition of activated process gases
US4568437A (en) * 1984-12-28 1986-02-04 Rca Corporation Method and apparatus for forming disilane
DE3706482A1 (de) * 1986-02-28 1987-09-03 Politechnika Warszawska Verfahren und vorrichtungen zur herstellung von diffusionsoberflaechenschichten auf metallenen werkstuecken durch glimmentladung
US4735633A (en) * 1987-06-23 1988-04-05 Chiu Kin Chung R Method and system for vapor extraction from gases
US4870030A (en) * 1987-09-24 1989-09-26 Research Triangle Institute, Inc. Remote plasma enhanced CVD method for growing an epitaxial semiconductor layer
GB2264957B (en) * 1992-03-12 1995-09-20 Bell Communications Res Deflected flow in a chemical vapor deposition cell
DE4324320B4 (de) * 1992-07-24 2006-08-31 Fuji Electric Co., Ltd., Kawasaki Verfahren und Vorrichtung zur Herstellung einer als dünne Schicht ausgebildeten fotovoltaischen Umwandlungsvorrichtung
WO2006053128A2 (en) * 2004-11-10 2006-05-18 Daystar Technologies, Inc. Pallet based system for forming thin-film solar cells
WO2006053218A2 (en) * 2004-11-10 2006-05-18 Daystar Technologies, Inc. Pressure control system in a photovoltaic substrate deposition

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3757733A (en) * 1971-10-27 1973-09-11 Texas Instruments Inc Radial flow reactor
GB1550853A (en) * 1975-10-06 1979-08-22 Hitachi Ltd Apparatus and process for plasma treatment
US4226897A (en) * 1977-12-05 1980-10-07 Plasma Physics Corporation Method of forming semiconducting materials and barriers
US4282267A (en) * 1979-09-20 1981-08-04 Western Electric Co., Inc. Methods and apparatus for generating plasmas
US4262631A (en) * 1979-10-01 1981-04-21 Kubacki Ronald M Thin film deposition apparatus using an RF glow discharge
JPS5934421B2 (ja) * 1979-11-29 1984-08-22 住友電気工業株式会社 薄膜製造法
CA1159012A (en) * 1980-05-02 1983-12-20 Seitaro Matsuo Plasma deposition apparatus
US4400409A (en) * 1980-05-19 1983-08-23 Energy Conversion Devices, Inc. Method of making p-doped silicon films
DE3272239D1 (en) * 1981-03-16 1986-09-04 Energy Conversion Devices Inc Apparatus including improved cathode for continuous deposition of amorphous material
JPS5833829A (ja) * 1981-08-24 1983-02-28 Toshiba Corp 薄膜形成装置
US4513684A (en) * 1982-12-22 1985-04-30 Energy Conversion Devices, Inc. Upstream cathode assembly

Also Published As

Publication number Publication date
CA1248210A (en) 1989-01-03
IN159704B (es) 1987-06-06
AU2245783A (en) 1984-06-28
BR8307045A (pt) 1984-07-31
US4483883A (en) 1984-11-20
DE3379509D1 (en) 1989-05-03
KR840007320A (ko) 1984-12-06
JPH0576173B2 (es) 1993-10-22
ES528255A0 (es) 1985-12-01
JPS59155124A (ja) 1984-09-04
ES544758A0 (es) 1987-08-01
ES8603114A1 (es) 1985-12-01
EP0118643A1 (en) 1984-09-19
EP0118643B1 (en) 1989-03-29

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