ES8801480A1 - Un dispositivo para proteger un circuito electrico de una transitoria de tension. - Google Patents

Un dispositivo para proteger un circuito electrico de una transitoria de tension.

Info

Publication number
ES8801480A1
ES8801480A1 ES557668A ES557668A ES8801480A1 ES 8801480 A1 ES8801480 A1 ES 8801480A1 ES 557668 A ES557668 A ES 557668A ES 557668 A ES557668 A ES 557668A ES 8801480 A1 ES8801480 A1 ES 8801480A1
Authority
ES
Spain
Prior art keywords
resistance state
protect
electrical circuit
voltage
transitory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES557668A
Other languages
English (en)
Other versions
ES557668A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raychem Ltd
Original Assignee
Raychem Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB868606758A external-priority patent/GB8606758D0/en
Application filed by Raychem Ltd filed Critical Raychem Ltd
Publication of ES557668A0 publication Critical patent/ES557668A0/es
Publication of ES8801480A1 publication Critical patent/ES8801480A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/044—Physical layout, materials not provided for elsewhere
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe

Landscapes

  • Protection Of Static Devices (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

DISPOSITIVO PARA PROTEGER UN CIRCUITO ELECTRICO DE UNA TRANSITORIA DE TENSION. ESTA CONSTITUIDO POR UNA COMPOSICION AMORFA DE SELENIO, ARSENICO Y GERMANIO. PUEDE CONMUTAR DESDE UN ESTADO DE ALTA RESISTENCIA A UN ESTADO DE BAJA RESISTENCIA CON UN TIEMPO DE CONMUTACION MUY RAPIDO Y ASI HACER PASAR EL IMPULSO TRANSITORIO A TIERRAANTES DE RETORNAR A SU ESTADO DE ALTA RESISTENCIA. PUEDE SOPORTAR ENERGIAS ELECTRICAS MUY ELEVADAS ANTES DE ENGANCHAR EN SU ESTADO DE BAJA RESISTENCIA. LA COMPOSICION QUE LO FORMA ESTA DETERMINADA, EL ESPESOR DEL ELEMENTO CONMUTADOR (1, 2) EN LA DIRECCION DEL FLUJO DE CORRIENTE TAMBIEN Y EL AREA DE LA SECCION TRANSVERSAL DEL ELEMENTO CONMUTADOR EN UN PLANO NORMAL TAMBIEN.
ES557668A 1985-03-29 1987-08-14 Un dispositivo para proteger un circuito electrico de una transitoria de tension. Expired ES8801480A1 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB8508304 1985-03-29
GB868606758A GB8606758D0 (en) 1986-03-19 1986-03-19 Integrated circuit

Publications (2)

Publication Number Publication Date
ES557668A0 ES557668A0 (es) 1987-12-16
ES8801480A1 true ES8801480A1 (es) 1987-12-16

Family

ID=26289066

Family Applications (1)

Application Number Title Priority Date Filing Date
ES557668A Expired ES8801480A1 (es) 1985-03-29 1987-08-14 Un dispositivo para proteger un circuito electrico de una transitoria de tension.

Country Status (7)

Country Link
EP (1) EP0196891B1 (es)
AU (1) AU584998B2 (es)
DE (1) DE3667228D1 (es)
ES (1) ES8801480A1 (es)
IL (1) IL78312A (es)
IN (1) IN167188B (es)
NZ (1) NZ215634A (es)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8621430D0 (en) * 1986-09-05 1987-01-14 Raychem Ltd Overvoltage protection device
GB2212988B (en) * 1987-11-30 1992-02-12 Plessey Co Plc Microwave circuit element
US4820203A (en) * 1988-01-14 1989-04-11 Raychem Corporation Multicontact connector
WO1990014707A1 (en) * 1989-05-26 1990-11-29 Raychem Limited Electrical device with transient protection
DE10134665C1 (de) * 2001-07-20 2002-09-05 Infineon Technologies Ag Betriebsverfahren für ein Halbleiterbauelement, geeignet für ESD-Schutz
US7751163B2 (en) 2006-09-29 2010-07-06 Qimonda Ag Electric device protection circuit and method for protecting an electric device
US10163977B1 (en) 2017-03-22 2018-12-25 Micron Technology, Inc. Chalcogenide memory device components and composition
US10727405B2 (en) 2017-03-22 2020-07-28 Micron Technology, Inc. Chalcogenide memory device components and composition
US10374009B1 (en) * 2018-07-17 2019-08-06 Macronix International Co., Ltd. Te-free AsSeGe chalcogenides for selector devices and memory devices using same
EP3660932B1 (en) * 2018-11-30 2025-12-31 Micron Technology, INC. CHALCOGENED SELECTOR COMPONENT FOR A MEMORY DEVICE
ES2729873B2 (es) 2019-06-14 2020-09-25 Dinnteco Factory Gasteiz S L Dispositivo compensador electromagnetico de radiofrecuencias variables para proteccion de palas de torres eolicas u otras estructuras moviles o estaticas

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3343034A (en) * 1961-06-21 1967-09-19 Energy Conversion Devices Inc Transient suppressor
US3271591A (en) * 1963-09-20 1966-09-06 Energy Conversion Devices Inc Symmetrical current controlling device
DE1437387A1 (de) * 1964-07-03 1968-11-28 Danfoss As UEberspannungs-Schutzvorrichtung an Fernsprechnetzleitungen
US3530441A (en) * 1969-01-15 1970-09-22 Energy Conversion Devices Inc Method and apparatus for storing and retrieving information
US4236188A (en) * 1979-01-15 1980-11-25 The United States Of America As Represented By The Secretary Of The Army Coaxial terminal protection device with disposable cartridge
EP0198624A1 (en) * 1985-03-29 1986-10-22 Raychem Limited Overvoltage protection device
GB8623177D0 (en) * 1986-09-26 1987-01-14 Raychem Ltd Circuit protection device

Also Published As

Publication number Publication date
AU584998B2 (en) 1989-06-08
ES557668A0 (es) 1987-12-16
IL78312A (en) 1990-03-19
IL78312A0 (en) 1986-07-31
DE3667228D1 (de) 1990-01-04
AU5536486A (en) 1986-10-02
EP0196891B1 (en) 1989-11-29
NZ215634A (en) 1989-08-29
IN167188B (es) 1990-09-15
EP0196891A1 (en) 1986-10-08

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