FI104383B - Förfarande för beläggning av insidan av en anläggning - Google Patents
Förfarande för beläggning av insidan av en anläggning Download PDFInfo
- Publication number
- FI104383B FI104383B FI974472A FI974472A FI104383B FI 104383 B FI104383 B FI 104383B FI 974472 A FI974472 A FI 974472A FI 974472 A FI974472 A FI 974472A FI 104383 B FI104383 B FI 104383B
- Authority
- FI
- Finland
- Prior art keywords
- coating
- coated
- reagent
- gas
- volume
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 52
- 238000000576 coating method Methods 0.000 title claims description 41
- 239000011248 coating agent Substances 0.000 title claims description 34
- 239000003153 chemical reaction reagent Substances 0.000 claims description 34
- 239000007789 gas Substances 0.000 claims description 25
- 239000000376 reactant Substances 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 238000005260 corrosion Methods 0.000 claims description 7
- 230000007797 corrosion Effects 0.000 claims description 7
- 238000006557 surface reaction Methods 0.000 claims description 7
- 239000012071 phase Substances 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 230000007246 mechanism Effects 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000012808 vapor phase Substances 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 2
- 150000001298 alcohols Chemical class 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 150000004770 chalcogenides Chemical class 0.000 claims description 2
- 125000004122 cyclic group Chemical group 0.000 claims description 2
- 239000013529 heat transfer fluid Substances 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- 150000002897 organic nitrogen compounds Chemical class 0.000 claims description 2
- 229910001868 water Inorganic materials 0.000 claims description 2
- 150000002736 metal compounds Chemical class 0.000 claims 1
- 150000002902 organometallic compounds Chemical class 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 15
- 239000010408 film Substances 0.000 description 12
- 238000003877 atomic layer epitaxy Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005086 pumping Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 229910003074 TiCl4 Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- -1 ketonates Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 description 1
- 241001299678 Cecropia Species 0.000 description 1
- 235000010884 Cecropia peltata Nutrition 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005524 ceramic coating Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010291 electrical method Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000029058 respiratory gaseous exchange Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 150000003558 thiocarbamic acid derivatives Chemical class 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000005200 wet scrubbing Methods 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Claims (14)
1. Förfarande för beläggning av innerytoma av en anläggning med ett materialskikt, kännetecknat avatt 5 - ätminstone en del av det inre rum som avgränsas av anläggningens innerytor tillsluts, - ängfaspulser av minst tvä olika reaktanter altemerande och upprepande inmatas i nämnda slutna inre rum, och - ett materialskikt utbildas pä de inre ytoma enligt ALE-tekniken genom att 10 utsätta ytoma för altemerande ytreaktioner orsakade av reaktantema.
2. Förfarande enligt krav 1, kännetecknat av att man som reaktanter använder flyktiga föreningar, säsom oorganiska föreningar av metaller, metallorganiska föreningar eller rena metaller, vatten, väteperoxid, syre, ozon, alkoholer, ammoniak eller organiska 15 föreningar av kväve.
3. Förfarande enligt krav 1 eller 2, kännetecknat av en kombination av följande steg: a. den av innerytoma (2; 13) begränsade volymen töms medelst en pump (3; 13) 20 pä gaser som möjligen stör beläggningsreaktionema, b. ytoma (2; 12) bringas i en temperatur som förutsätts av ytreaktionema använda i beläggningsprocessen, c. ett första reagens (A) leds in i den av ytoma (2; 12) begränsade volymen * * « · :\ ätminstone i en sädan mängd, att det räcker tili för att fylla ytbindningsplatsema • · · .•:\25 pä ytoma, d. ett eventuellt överskott av det första reagenset (A) avlägsnas frän nämda :Ts volym, e. ett andra reagens (B) leds in i den av ytoma begränsade volymen ätminstone i : ·. en sädan mängd, att det räcker tili för att fylla ytbindningsplatsema pä ytoma 1 : ":30 (2; 12), ! '1' f. ett eventuellt överskott av det andra reagenset avlägsnas frän nämnda volym, • · · • · • · · • Φ I • i 13 104383 och g. stegen c - f upprepas cykliskt i en sädan mängd som behövs för att beläggning-en erhäller önskad tjocklek. 5
4. Förfarande enligt krav 3, kännetecknat av att den för beläggning avsedda ytan bringas i en temperatur som förutsätts av ytreaktionema använda i beläggningspro-cessen medelst värmare anordnade utanför stycket.
5. Förfarande enligt krav 3, kännetecknat av att den för beläggning avsedda 10 ytan bringas i en temperatur som förutsätts av ytreaktionema använda i beläggningspro-cessen genom ledning av värmeöverföringsvätska eller gas i det utrymme som begränsas av den för beläggning avsedda ytan (2; 12) före beläggningsstegen.
6. Förfarande enligt krav 5, kännetecknat av att man leder värmeöverförings- 15 vätska eller gas i det utrymme som begränsas av den för beläggning avsedda ytan (2; 12) ett flertal gänger efler den cykliska perioden som utgörs av stegen c - f.
7. Förfarande enligt nägot av kraven 3-6, kännetecknat av att avlägsnandet av överskotten pä reagensema (A, B) vid stegen d och f effektiveras medelst en skydds- 20 gasströmning.
... 8. Förfarande enligt nägot av kraven 3-7, kännetecknat av att atminstone ett • · · · .:. reagens tili utöver det första och det andra reagenset inmatas i volymen begränsad av • ·« t |\ den för beläggning avsedda ytan (2; 12) för säkerställande och/eller kompletterande av 25 ytreaktionema ästadkomna av det första och det andra reagenset. :T:
9. Förfarande enligt nägot av de föregäende kraven, kännetecknat av att ett inre ·»» ' ' ' rum eller ett gasutrymme, som begränsas av de för beläggning avsedda innerytoma och som tillsluts medelst ventilmekanismer (6, 7; 16, 17, 19), utformas i anläggningen. 30 .'.'.
10. Förfarande enligt krav 9, kännetecknat av att atminstone en ventilmekanism f I I w ’ • « • · • · » « 14 104383 (6, 7; 16, 17) används för inmatningen av reaktantema, varvid ätminstone tvä reaktant-källor (A, B) förenas tili ifrägavarande ventilmekanism.
11. Förfarande enligt krav 9 eller 10, kännetecknat avatt ätminstone en 5 ventilmekanism (18) används för avlägsnande av gasöverskottet.
12. Förfarande enligt nägot av de föregäende kraven, kännetecknat avatt innerytan av processanläggningen, säsom rörsystemet eller behällaren (1, 11), förses med en beläggning. 10
13. Förfarande enligt nägot av kraven 1-12, kännetecknat avatt korrosions-eller belastningshällfasthetsförmägan eller optiska eller elektriska egenskaper hos innerytan av anläggningen förbättras medelst beläggningen, eller att friktionen minskas. 15
14. Förfarande enligt nägot av de föregäende kraven, kännetecknat av att ett oxid-, nitrid- och/eller kalkogenidskikt utbildas pä innerytan. • · · • · · · • · · • « · · • « • 9 • 99 • « 1 f • 99 • 9 n • · · • · · · 1 I < · · 0 9 9
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI974472A FI104383B (sv) | 1997-12-09 | 1997-12-09 | Förfarande för beläggning av insidan av en anläggning |
| PCT/FI1998/000955 WO1999029924A1 (en) | 1997-12-09 | 1998-12-09 | Method for coating inner surfaces of equipment |
| US09/581,020 US6416577B1 (en) | 1997-12-09 | 1998-12-09 | Method for coating inner surfaces of equipment |
| AU14898/99A AU1489899A (en) | 1997-12-09 | 1998-12-09 | Method for coating inner surfaces of equipment |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI974472A FI104383B (sv) | 1997-12-09 | 1997-12-09 | Förfarande för beläggning av insidan av en anläggning |
| FI974472 | 1997-12-09 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| FI974472A0 FI974472A0 (fi) | 1997-12-09 |
| FI974472L FI974472L (sv) | 1999-06-10 |
| FI104383B true FI104383B (sv) | 2000-01-14 |
Family
ID=8550093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI974472A FI104383B (sv) | 1997-12-09 | 1997-12-09 | Förfarande för beläggning av insidan av en anläggning |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6416577B1 (sv) |
| AU (1) | AU1489899A (sv) |
| FI (1) | FI104383B (sv) |
| WO (1) | WO1999029924A1 (sv) |
Families Citing this family (195)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6974766B1 (en) | 1998-10-01 | 2005-12-13 | Applied Materials, Inc. | In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application |
| TW432488B (en) * | 1999-04-12 | 2001-05-01 | Mosel Vitelic Inc | Reaction facility for forming film and method of air intake |
| DE10049257B4 (de) * | 1999-10-06 | 2015-05-13 | Samsung Electronics Co., Ltd. | Verfahren zur Dünnfilmerzeugung mittels atomarer Schichtdeposition |
| US6319766B1 (en) * | 2000-02-22 | 2001-11-20 | Applied Materials, Inc. | Method of tantalum nitride deposition by tantalum oxide densification |
| US6620723B1 (en) | 2000-06-27 | 2003-09-16 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US6551929B1 (en) | 2000-06-28 | 2003-04-22 | Applied Materials, Inc. | Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques |
| US7405158B2 (en) | 2000-06-28 | 2008-07-29 | Applied Materials, Inc. | Methods for depositing tungsten layers employing atomic layer deposition techniques |
| US6936538B2 (en) | 2001-07-16 | 2005-08-30 | Applied Materials, Inc. | Method and apparatus for depositing tungsten after surface treatment to improve film characteristics |
| US7101795B1 (en) | 2000-06-28 | 2006-09-05 | Applied Materials, Inc. | Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer |
| US20020036780A1 (en) * | 2000-09-27 | 2002-03-28 | Hiroaki Nakamura | Image processing apparatus |
| EP1327010B1 (en) * | 2000-09-28 | 2013-12-04 | President and Fellows of Harvard College | Vapor deposition of silicates |
| US6765178B2 (en) | 2000-12-29 | 2004-07-20 | Applied Materials, Inc. | Chamber for uniform substrate heating |
| US6998579B2 (en) | 2000-12-29 | 2006-02-14 | Applied Materials, Inc. | Chamber for uniform substrate heating |
| US6825447B2 (en) | 2000-12-29 | 2004-11-30 | Applied Materials, Inc. | Apparatus and method for uniform substrate heating and contaminate collection |
| US6811814B2 (en) | 2001-01-16 | 2004-11-02 | Applied Materials, Inc. | Method for growing thin films by catalytic enhancement |
| US6951804B2 (en) | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
| US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US6660126B2 (en) | 2001-03-02 | 2003-12-09 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US6734020B2 (en) | 2001-03-07 | 2004-05-11 | Applied Materials, Inc. | Valve control system for atomic layer deposition chamber |
| FI109770B (sv) * | 2001-03-16 | 2002-10-15 | Asm Microchemistry Oy | Förfarande för framställning av metallnitridtunnfilmer |
| US6596643B2 (en) * | 2001-05-07 | 2003-07-22 | Applied Materials, Inc. | CVD TiSiN barrier for copper integration |
| US7037574B2 (en) * | 2001-05-23 | 2006-05-02 | Veeco Instruments, Inc. | Atomic layer deposition for fabricating thin films |
| US6849545B2 (en) | 2001-06-20 | 2005-02-01 | Applied Materials, Inc. | System and method to form a composite film stack utilizing sequential deposition techniques |
| US7211144B2 (en) | 2001-07-13 | 2007-05-01 | Applied Materials, Inc. | Pulsed nucleation deposition of tungsten layers |
| US20030198754A1 (en) * | 2001-07-16 | 2003-10-23 | Ming Xi | Aluminum oxide chamber and process |
| US9051641B2 (en) | 2001-07-25 | 2015-06-09 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
| WO2003030224A2 (en) | 2001-07-25 | 2003-04-10 | Applied Materials, Inc. | Barrier formation using novel sputter-deposition method |
| US20090004850A1 (en) | 2001-07-25 | 2009-01-01 | Seshadri Ganguli | Process for forming cobalt and cobalt silicide materials in tungsten contact applications |
| US8110489B2 (en) | 2001-07-25 | 2012-02-07 | Applied Materials, Inc. | Process for forming cobalt-containing materials |
| US20030029715A1 (en) | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
| US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
| DE10138696A1 (de) * | 2001-08-07 | 2003-03-06 | Schott Glas | Verfahren und Vorrichtung zum gleichzeitigen Beschichten und Formen eines dreidimensionalen Körpers |
| US6718126B2 (en) | 2001-09-14 | 2004-04-06 | Applied Materials, Inc. | Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition |
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| US4636402A (en) * | 1986-02-13 | 1987-01-13 | E. I. Du Pont De Nemours And Company | Method of coating hollow massive objects with plastisols and organosol |
| US4879140A (en) * | 1988-11-21 | 1989-11-07 | Deposition Sciences, Inc. | Method for making pigment flakes |
| DE4437050A1 (de) * | 1994-10-17 | 1996-04-18 | Leybold Ag | Vorrichtung zum Behandeln von Oberflächen von Hohlkörpern, insbesondere von Innenflächen von Kraftstofftanks |
-
1997
- 1997-12-09 FI FI974472A patent/FI104383B/sv not_active IP Right Cessation
-
1998
- 1998-12-09 WO PCT/FI1998/000955 patent/WO1999029924A1/en not_active Ceased
- 1998-12-09 AU AU14898/99A patent/AU1489899A/en not_active Abandoned
- 1998-12-09 US US09/581,020 patent/US6416577B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| FI974472A0 (fi) | 1997-12-09 |
| WO1999029924A1 (en) | 1999-06-17 |
| US6416577B1 (en) | 2002-07-09 |
| AU1489899A (en) | 1999-06-28 |
| FI974472L (sv) | 1999-06-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GB | Transfer or assigment of application |
Owner name: NESTE OY |
|
| MA | Patent expired |