FR1019230A - Dispositifs traducteurs de signaux à semi-conducteurs - Google Patents

Dispositifs traducteurs de signaux à semi-conducteurs

Info

Publication number
FR1019230A
FR1019230A FR1019230DA FR1019230A FR 1019230 A FR1019230 A FR 1019230A FR 1019230D A FR1019230D A FR 1019230DA FR 1019230 A FR1019230 A FR 1019230A
Authority
FR
France
Prior art keywords
signal translator
semiconductor signal
translator devices
devices
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of FR1019230A publication Critical patent/FR1019230A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H37/00—Thermally-actuated switches
    • H01H37/02—Details
    • H01H37/32—Thermally-sensitive members
    • H01H37/34—Means for transmitting heat thereto, e.g. capsule remote from contact member
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Spark Plugs (AREA)
  • Bipolar Transistors (AREA)
FR1019230D 1949-04-27 1950-03-17 Dispositifs traducteurs de signaux à semi-conducteurs Expired FR1019230A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US89969A US2666814A (en) 1949-04-27 1949-04-27 Semiconductor translating device

Publications (1)

Publication Number Publication Date
FR1019230A true FR1019230A (fr) 1953-01-19

Family

ID=22220444

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1019230D Expired FR1019230A (fr) 1949-04-27 1950-03-17 Dispositifs traducteurs de signaux à semi-conducteurs

Country Status (4)

Country Link
US (1) US2666814A (fr)
CH (1) CH289519A (fr)
FR (1) FR1019230A (fr)
GB (1) GB700241A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1041160B (de) * 1953-03-09 1958-10-16 Gen Electric Halbleiteranordnung mit einem langgestreckten Halbleiterkoerper und ohmschen Elektroden an den Endflaechen
DE1047316B (de) * 1953-08-12 1958-12-24 Gen Electric Halbleiteranordnung mit einem langgestreckten Halbleiterkoerper vom einen Leitungstyp und ohmschen Elektroden an den Enden

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US2843809A (en) * 1954-05-11 1958-07-15 Corvey Engineering Company Transistors
US2842466A (en) * 1954-06-15 1958-07-08 Gen Electric Method of making p-nu junction semiconductor unit
US2904704A (en) * 1954-06-17 1959-09-15 Gen Electric Semiconductor devices
US2846626A (en) * 1954-07-28 1958-08-05 Raytheon Mfg Co Junction transistors and methods of forming them
US2897421A (en) * 1954-08-11 1959-07-28 Westinghouse Electric Corp Phototransistor design
US3081421A (en) * 1954-08-17 1963-03-12 Gen Motors Corp Unipolar transistor
NL199921A (fr) * 1954-08-27
US2895058A (en) * 1954-09-23 1959-07-14 Rca Corp Semiconductor devices and systems
US2889499A (en) * 1954-09-27 1959-06-02 Ibm Bistable semiconductor device
US3002100A (en) * 1954-09-27 1961-09-26 Ibm Transistor circuit element
DE1035777B (de) * 1954-09-28 1958-08-07 Ibm Deutschland Verfahren zur Verbesserung des Frequenzverhaltens eines Transistors
DE1073111B (de) * 1954-12-02 1960-01-14 Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen Verfahren zur Herstellung eines Flachentransistors mit einer Oberflachenschicht erhöhter Storstellenkonzentration an den freien Stellen zwischen den Elektroden an einem einkristallmen Halbleiterkörper
US2885609A (en) * 1955-01-31 1959-05-05 Philco Corp Semiconductive device and method for the fabrication thereof
NL204025A (fr) * 1955-03-23
US2913676A (en) * 1955-04-18 1959-11-17 Rca Corp Semiconductor devices and systems
US2894152A (en) * 1955-05-16 1959-07-07 Ibm Crystal diode with improved recovery time
DE1035778B (de) * 1955-05-20 1958-08-07 Ibm Deutschland Transistor mit einem Halbleitergrundkoerper von einem Leitungstypus und mit drei oder mehr pn-UEbergaengen und einer oder mehreren Spitzenelektroden
US2995665A (en) * 1955-05-20 1961-08-08 Ibm Transistors and circuits therefor
US2921362A (en) * 1955-06-27 1960-01-19 Honeywell Regulator Co Process for the production of semiconductor devices
US2915647A (en) * 1955-07-13 1959-12-01 Bell Telephone Labor Inc Semiconductive switch and negative resistance
US2862115A (en) * 1955-07-13 1958-11-25 Bell Telephone Labor Inc Semiconductor circuit controlling devices
CA605440A (en) * 1955-11-03 1960-09-20 E. Pardue Turner Semiconductor devices and methods of making the same
NL107362C (fr) * 1955-12-02
DE1092130B (de) * 1955-12-29 1960-11-03 Honeywell Regulator Co Flaechentransistor mit einem plaettchen-foermigen Halbleiterkoerper
US3015763A (en) * 1956-03-08 1962-01-02 Hazeltine Research Inc Signal-translating device
NL107367C (fr) * 1956-04-03
US2877309A (en) * 1956-04-18 1959-03-10 Sylvania Electric Prod Hall effect amplifier
DE1170555B (de) * 1956-07-23 1964-05-21 Siemens Ag Verfahren zum Herstellen eines Halbleiter-bauelements mit drei Zonen abwechselnd entgegengesetzten Leitungstyps
US2913541A (en) * 1956-11-20 1959-11-17 Gen Electric Semiconductor wave filter
FR1163274A (fr) * 1956-12-12 1958-09-24 Dispositif à semi-conducteurs pour le redressement et la limitation de forts courants électriques
US2941153A (en) * 1956-12-18 1960-06-14 Gen Dynamics Corp Transistor gain control
BE552928A (fr) * 1957-03-18
US2960640A (en) * 1957-05-10 1960-11-15 Siemens Ag Electric semiconductor device of the p-n junction type
US2910634A (en) * 1957-05-31 1959-10-27 Ibm Semiconductor device
US3007090A (en) * 1957-09-04 1961-10-31 Ibm Back resistance control for junction semiconductor devices
US3022472A (en) * 1958-01-22 1962-02-20 Bell Telephone Labor Inc Variable equalizer employing semiconductive element
NL237225A (fr) * 1958-03-19
DE1129625B (de) * 1958-05-23 1962-05-17 Telefunken Patent Drifttransistor, bei dem der spezifische Widerstand in der Basiszone von der Emitter-zur Kollektorzone zunimmt
NL241982A (fr) * 1958-08-13 1900-01-01
NL246032A (fr) * 1959-01-27
US3148284A (en) * 1959-01-30 1964-09-08 Zenith Radio Corp Semi-conductor apparatus with field-biasing means
US3138721A (en) * 1959-05-06 1964-06-23 Texas Instruments Inc Miniature semiconductor network diode and gate
US2994811A (en) * 1959-05-04 1961-08-01 Bell Telephone Labor Inc Electrostatic field-effect transistor having insulated electrode controlling field in depletion region of reverse-biased junction
US3117260A (en) * 1959-09-11 1964-01-07 Fairchild Camera Instr Co Semiconductor circuit complexes
FR1148316A (fr) * 1959-10-20 1957-12-06 Thomson Houston Comp Francaise Procédé et appareil pour la réalisation de circuits imprimés
US3122680A (en) * 1960-02-25 1964-02-25 Burroughs Corp Miniaturized switching circuit
US3092522A (en) * 1960-04-27 1963-06-04 Motorola Inc Method and apparatus for use in the manufacture of transistors
US3230398A (en) * 1960-05-02 1966-01-18 Texas Instruments Inc Integrated structure semiconductor network forming bipolar field effect transistor
NL276412A (fr) * 1961-03-30
DE1214789B (de) * 1961-05-19 1966-04-21 Siemens Ag Verfahren zum Herstellen eines homogen dotierten Siliziumkristallkoerpers
NL268355A (fr) * 1961-08-17
US3184657A (en) * 1962-01-05 1965-05-18 Fairchild Camera Instr Co Nested region transistor configuration
US3244949A (en) * 1962-03-16 1966-04-05 Fairchild Camera Instr Co Voltage regulator
BE636316A (fr) * 1962-08-23 1900-01-01
US3252003A (en) * 1962-09-10 1966-05-17 Westinghouse Electric Corp Unipolar transistor
US3241013A (en) * 1962-10-25 1966-03-15 Texas Instruments Inc Integral transistor pair for use as chopper
US3254277A (en) * 1963-02-27 1966-05-31 United Aircraft Corp Integrated circuit with component defining groove
US3304470A (en) * 1963-03-14 1967-02-14 Nippon Electric Co Negative resistance semiconductor device utilizing tunnel effect
GB1050417A (fr) * 1963-07-09
DE1439480B2 (de) * 1964-12-01 1976-07-08 Siemens AG, 1000 Berlin und 8000 München Transistor und verfahren zu seiner herstellung
US3388009A (en) * 1965-06-23 1968-06-11 Ion Physics Corp Method of forming a p-n junction by an ionic beam
US3383567A (en) * 1965-09-15 1968-05-14 Ion Physics Corp Solid state translating device comprising irradiation implanted conductivity ions
US3459603A (en) * 1966-01-12 1969-08-05 Us Air Force Method for preparing electroluminescent light sources
DE1558806B2 (de) * 1966-04-07 1970-09-24 Siemens Ag Verfahren zur Erhoehung der kritischen Stromdichte von Schichten aus supraleitenden intermetallischen Verbindungen mit beta-Wolfram-Kristallstruktur durch Teilchenbestrahlung
US3496029A (en) * 1966-10-12 1970-02-17 Ion Physics Corp Process of doping semiconductor with analyzing magnet
US3483443A (en) * 1967-09-28 1969-12-09 Hughes Aircraft Co Diode having large capacitance change related to minimal applied voltage
US3611062A (en) * 1968-04-17 1971-10-05 Ibm Passive elements for solid-state integrated circuits
US3548269A (en) * 1968-12-03 1970-12-15 Sprague Electric Co Resistive layer semiconductive device
US3629782A (en) * 1970-10-06 1971-12-21 Cogar Corp Resistor with means for decreasing current density
US3873371A (en) * 1972-11-07 1975-03-25 Hughes Aircraft Co Small geometry charge coupled device and process for fabricating same
DE2341154C2 (de) * 1973-08-14 1975-06-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer Zweiphasen-Ladungsverschiebeanordnung
DE2439430C2 (de) * 1974-08-16 1983-02-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von homogen dotiertem Halbleitermaterial mit p-Leitfähigkeit
US4635084A (en) * 1984-06-08 1987-01-06 Eaton Corporation Split row power JFET
US6949865B2 (en) * 2003-01-31 2005-09-27 Betabatt, Inc. Apparatus and method for generating electrical current from the nuclear decay process of a radioactive material
US6774531B1 (en) * 2003-01-31 2004-08-10 Betabatt, Inc. Apparatus and method for generating electrical current from the nuclear decay process of a radioactive material

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US917191A (en) * 1908-01-28 1909-04-06 Adriaan P H Trivelli Process for obtaining radio-active bodies from uranium or thorium, &c.
US1810539A (en) * 1926-08-16 1931-06-16 Fed Telegraph Co Method of and apparatus for amplifying weak electric currents
US1877140A (en) * 1928-12-08 1932-09-13 Lilienfeld Julius Edgar Amplifier for electric currents
US2161985A (en) * 1934-03-12 1939-06-13 Szilard Leo Process of producing radio-active elements
US2402661A (en) * 1941-03-01 1946-06-25 Bell Telephone Labor Inc Alternating current rectifier
US2524035A (en) * 1948-02-26 1950-10-03 Bell Telphone Lab Inc Three-electrode circuit element utilizing semiconductive materials
US2600500A (en) * 1948-09-24 1952-06-17 Bell Telephone Labor Inc Semiconductor signal translating device with controlled carrier transit times

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1041160B (de) * 1953-03-09 1958-10-16 Gen Electric Halbleiteranordnung mit einem langgestreckten Halbleiterkoerper und ohmschen Elektroden an den Endflaechen
DE1047316B (de) * 1953-08-12 1958-12-24 Gen Electric Halbleiteranordnung mit einem langgestreckten Halbleiterkoerper vom einen Leitungstyp und ohmschen Elektroden an den Enden

Also Published As

Publication number Publication date
US2666814A (en) 1954-01-19
CH289519A (de) 1953-03-15
GB700241A (en) 1953-11-25

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