FR1084437A - Système commandé à conduction électrique asymétrique - Google Patents
Système commandé à conduction électrique asymétriqueInfo
- Publication number
- FR1084437A FR1084437A FR1084437DA FR1084437A FR 1084437 A FR1084437 A FR 1084437A FR 1084437D A FR1084437D A FR 1084437DA FR 1084437 A FR1084437 A FR 1084437A
- Authority
- FR
- France
- Prior art keywords
- electrical conduction
- controlled system
- conduction controlled
- asymmetrical electrical
- asymmetrical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/645—Combinations of only lateral BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/50—Alloying conductive materials with semiconductor bodies
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2842723X | 1952-04-15 | ||
| DE741193X | 1952-07-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR1084437A true FR1084437A (fr) | 1955-01-19 |
Family
ID=32327368
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR1078688D Expired FR1078688A (fr) | 1952-04-15 | 1953-04-15 | Système à conductibilité électrique asymétrique à fonctionnement commandé |
| FR1084437D Expired FR1084437A (fr) | 1952-04-15 | 1953-07-29 | Système commandé à conduction électrique asymétrique |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR1078688D Expired FR1078688A (fr) | 1952-04-15 | 1953-04-15 | Système à conductibilité électrique asymétrique à fonctionnement commandé |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US2842723A (fr) |
| FR (2) | FR1078688A (fr) |
| GB (1) | GB741193A (fr) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2842723A (en) * | 1952-04-15 | 1958-07-08 | Licentia Gmbh | Controllable asymmetric electrical conductor systems |
| US2842466A (en) * | 1954-06-15 | 1958-07-08 | Gen Electric | Method of making p-nu junction semiconductor unit |
| US3081421A (en) * | 1954-08-17 | 1963-03-12 | Gen Motors Corp | Unipolar transistor |
| US2941131A (en) * | 1955-05-13 | 1960-06-14 | Philco Corp | Semiconductive apparatus |
| US2894152A (en) * | 1955-05-16 | 1959-07-07 | Ibm | Crystal diode with improved recovery time |
| US2927222A (en) * | 1955-05-27 | 1960-03-01 | Philco Corp | Polarizing semiconductive apparatus |
| US2862115A (en) * | 1955-07-13 | 1958-11-25 | Bell Telephone Labor Inc | Semiconductor circuit controlling devices |
| US2868988A (en) * | 1955-12-22 | 1959-01-13 | Miller William | Method of reducing transient reverse current |
| NL222571A (fr) * | 1956-03-05 | 1900-01-01 | ||
| NL216979A (fr) * | 1956-05-18 | |||
| US2806983A (en) * | 1956-06-01 | 1957-09-17 | Gen Electric | Remote base transistor |
| US3028500A (en) * | 1956-08-24 | 1962-04-03 | Rca Corp | Photoelectric apparatus |
| US3018539A (en) * | 1956-11-06 | 1962-01-30 | Motorola Inc | Diffused base transistor and method of making same |
| US2980831A (en) * | 1957-11-21 | 1961-04-18 | Sprague Electric Co | Means for reducing surface recombination |
| NL237225A (fr) * | 1958-03-19 | |||
| US3109938A (en) * | 1958-03-19 | 1963-11-05 | Rauland Corp | Semi-conductor device having a gas-discharge type switching characteristic |
| US3109221A (en) * | 1958-08-19 | 1963-11-05 | Clevite Corp | Semiconductor device |
| US2998534A (en) * | 1958-09-04 | 1961-08-29 | Clevite Corp | Symmetrical junction transistor device and circuit |
| US2992471A (en) * | 1958-11-04 | 1961-07-18 | Bell Telephone Labor Inc | Formation of p-n junctions in p-type semiconductors |
| NL245195A (fr) * | 1958-12-11 | |||
| US3085310A (en) * | 1958-12-12 | 1963-04-16 | Ibm | Semiconductor device |
| GB945747A (fr) * | 1959-02-06 | Texas Instruments Inc | ||
| US3219890A (en) * | 1959-02-25 | 1965-11-23 | Transitron Electronic Corp | Semiconductor barrier-layer device and terminal structure thereon |
| US3063879A (en) * | 1959-02-26 | 1962-11-13 | Westinghouse Electric Corp | Configuration for semiconductor devices |
| US3134159A (en) * | 1959-03-26 | 1964-05-26 | Sprague Electric Co | Method for producing an out-diffused graded-base transistor |
| NL249774A (fr) * | 1959-03-26 | |||
| NL252855A (fr) * | 1959-06-23 | |||
| US2981877A (en) * | 1959-07-30 | 1961-04-25 | Fairchild Semiconductor | Semiconductor device-and-lead structure |
| US3070859A (en) * | 1959-10-06 | 1963-01-01 | Clevite Corp | Apparatus for fabricating semiconductor devices |
| US3124862A (en) * | 1959-12-14 | 1964-03-17 | Alloy double-diffused semiconductor | |
| US3186065A (en) * | 1960-06-10 | 1965-06-01 | Sylvania Electric Prod | Semiconductor device and method of manufacture |
| US3099776A (en) * | 1960-06-10 | 1963-07-30 | Texas Instruments Inc | Indium antimonide transistor |
| US3082162A (en) * | 1960-10-24 | 1963-03-19 | Bernard A Kulp | Electron processing of semiconducting material |
| BE624012A (fr) * | 1961-10-27 | |||
| US3643138A (en) * | 1962-01-29 | 1972-02-15 | Texas Instruments Inc | Semiconductor device |
| US5021856A (en) * | 1989-03-15 | 1991-06-04 | Plessey Overseas Limited | Universal cell for bipolar NPN and PNP transistors and resistive elements |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2563503A (en) * | 1951-08-07 | Transistor | ||
| US2563504A (en) * | 1951-08-07 | Semiconductor translating device | ||
| BE471046A (fr) * | 1944-12-14 | |||
| NL70486C (fr) * | 1945-12-29 | |||
| US2505633A (en) * | 1946-03-18 | 1950-04-25 | Purdue Research Foundation | Alloys of germanium and method of making same |
| US2560594A (en) * | 1948-09-24 | 1951-07-17 | Bell Telephone Labor Inc | Semiconductor translator and method of making it |
| US2600500A (en) * | 1948-09-24 | 1952-06-17 | Bell Telephone Labor Inc | Semiconductor signal translating device with controlled carrier transit times |
| US2666814A (en) * | 1949-04-27 | 1954-01-19 | Bell Telephone Labor Inc | Semiconductor translating device |
| BE527524A (fr) * | 1949-05-30 | |||
| US2629672A (en) * | 1949-07-07 | 1953-02-24 | Bell Telephone Labor Inc | Method of making semiconductive translating devices |
| US2586080A (en) * | 1949-10-11 | 1952-02-19 | Bell Telephone Labor Inc | Semiconductive signal translating device |
| NL82014C (fr) * | 1949-11-30 | |||
| US2561411A (en) * | 1950-03-08 | 1951-07-24 | Bell Telephone Labor Inc | Semiconductor signal translating device |
| US2588254A (en) * | 1950-05-09 | 1952-03-04 | Purdue Research Foundation | Photoelectric and thermoelectric device utilizing semiconducting material |
| US2691736A (en) * | 1950-12-27 | 1954-10-12 | Bell Telephone Labor Inc | Electrical translation device, including semiconductor |
| US2604496A (en) * | 1951-02-08 | 1952-07-22 | Westinghouse Electric Corp | Semiconductor relay device |
| US2740076A (en) * | 1951-03-02 | 1956-03-27 | Int Standard Electric Corp | Crystal triodes |
| BE509110A (fr) * | 1951-05-05 | |||
| US2842723A (en) * | 1952-04-15 | 1958-07-08 | Licentia Gmbh | Controllable asymmetric electrical conductor systems |
| BE524233A (fr) * | 1952-11-14 |
-
1953
- 1953-04-14 US US348728A patent/US2842723A/en not_active Expired - Lifetime
- 1953-04-15 FR FR1078688D patent/FR1078688A/fr not_active Expired
- 1953-07-29 GB GB21029/53A patent/GB741193A/en not_active Expired
- 1953-07-29 US US371013A patent/US2709232A/en not_active Expired - Lifetime
- 1953-07-29 FR FR1084437D patent/FR1084437A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US2842723A (en) | 1958-07-08 |
| GB741193A (en) | 1955-11-30 |
| FR1078688A (fr) | 1954-11-22 |
| US2709232A (en) | 1955-05-24 |
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