FR1098372A - Dispositifs semi-conducteurs - Google Patents

Dispositifs semi-conducteurs

Info

Publication number
FR1098372A
FR1098372A FR1098372DA FR1098372A FR 1098372 A FR1098372 A FR 1098372A FR 1098372D A FR1098372D A FR 1098372DA FR 1098372 A FR1098372 A FR 1098372A
Authority
FR
France
Prior art keywords
semiconductor devices
semiconductor
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Application granted granted Critical
Publication of FR1098372A publication Critical patent/FR1098372A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR1098372D 1953-05-22 1954-04-08 Dispositifs semi-conducteurs Expired FR1098372A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US755456XA 1953-05-22 1953-05-22

Publications (1)

Publication Number Publication Date
FR1098372A true FR1098372A (fr) 1955-07-25

Family

ID=22126455

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1098372D Expired FR1098372A (fr) 1953-05-22 1954-04-08 Dispositifs semi-conducteurs

Country Status (2)

Country Link
FR (1) FR1098372A (fr)
GB (1) GB755456A (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2857527A (en) * 1955-04-28 1958-10-21 Rca Corp Semiconductor devices including biased p+p or n+n rectifying barriers
US2914715A (en) * 1956-07-02 1959-11-24 Bell Telephone Labor Inc Semiconductor diode
DE1073632B (de) * 1956-06-18 1960-01-21 Radio Corporation Of America, New York, N. Y. (V. St. A.) Drift-Transistor mit einer Zonenfolge P-N-P bzw. N-P-N und Verfahren zu seiner Herstellung
US3028655A (en) * 1955-03-23 1962-04-10 Bell Telephone Labor Inc Semiconductive device
DE1166941B (de) * 1957-02-07 1964-04-02 Telefunken Patent Halbleiterbauelement mit pn-UEbergang

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3028655A (en) * 1955-03-23 1962-04-10 Bell Telephone Labor Inc Semiconductive device
US2857527A (en) * 1955-04-28 1958-10-21 Rca Corp Semiconductor devices including biased p+p or n+n rectifying barriers
DE1073632B (de) * 1956-06-18 1960-01-21 Radio Corporation Of America, New York, N. Y. (V. St. A.) Drift-Transistor mit einer Zonenfolge P-N-P bzw. N-P-N und Verfahren zu seiner Herstellung
US2914715A (en) * 1956-07-02 1959-11-24 Bell Telephone Labor Inc Semiconductor diode
DE1166941B (de) * 1957-02-07 1964-04-02 Telefunken Patent Halbleiterbauelement mit pn-UEbergang

Also Published As

Publication number Publication date
GB755456A (en) 1956-08-22

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