FR1135760A - Transistor à surface - Google Patents

Transistor à surface

Info

Publication number
FR1135760A
FR1135760A FR1135760DA FR1135760A FR 1135760 A FR1135760 A FR 1135760A FR 1135760D A FR1135760D A FR 1135760DA FR 1135760 A FR1135760 A FR 1135760A
Authority
FR
France
Prior art keywords
surface transistor
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Schuckertwerke AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens Corp filed Critical Siemens Schuckertwerke AG
Application granted granted Critical
Publication of FR1135760A publication Critical patent/FR1135760A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34Bipolar devices
    • H10D48/345Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60Impurity distributions or concentrations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50Alloying conductive materials with semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
FR1135760D 1954-12-02 1955-04-06 Transistor à surface Expired FR1135760A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2929006X 1954-12-02
DES0041859 1954-12-08

Publications (1)

Publication Number Publication Date
FR1135760A true FR1135760A (fr) 1957-05-03

Family

ID=32394888

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1135760D Expired FR1135760A (fr) 1954-12-02 1955-04-06 Transistor à surface

Country Status (3)

Country Link
US (2) US2929006A (fr)
DE (1) DE1073111B (fr)
FR (1) FR1135760A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1080696B (de) * 1956-12-10 1960-04-28 Stanislas Teszner Transistor, insbesondere Unipolartransistor, mit einem ebenen Halbleiterkoerper und halbleitenden, zylindrischen Zaehnen auf dessen Oberflaeche und Verfahren zu seiner Herstellung
DE1117222B (de) * 1958-10-23 1961-11-16 Shockley Transistor Corp Verfahren zur Herstellung eines Unipolartransistors
DE1144403B (de) * 1959-05-13 1963-02-28 Ass Elect Ind Leistungstransistor

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3062690A (en) * 1955-08-05 1962-11-06 Hoffman Electronics Corp Semi-conductor device and method of making the same
NL222571A (fr) * 1956-03-05 1900-01-01
US2980830A (en) * 1956-08-22 1961-04-18 Shockley William Junction transistor
US2985550A (en) * 1957-01-04 1961-05-23 Texas Instruments Inc Production of high temperature alloyed semiconductors
US3187241A (en) * 1957-03-27 1965-06-01 Rca Corp Transistor with emitter at bottom of groove extending crosswise the base
US2967985A (en) * 1957-04-11 1961-01-10 Shockley Transistor structure
BE574814A (fr) * 1958-01-16
US2967344A (en) * 1958-02-14 1961-01-10 Rca Corp Semiconductor devices
US2985805A (en) * 1958-03-05 1961-05-23 Rca Corp Semiconductor devices
US3111590A (en) * 1958-06-05 1963-11-19 Clevite Corp Transistor structure controlled by an avalanche barrier
US3083441A (en) * 1959-04-13 1963-04-02 Texas Instruments Inc Method for fabricating transistors
DE1133038B (de) * 1960-05-10 1962-07-12 Siemens Ag Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper undvier Zonen abwechselnden Leitfaehigkeitstyps
DE1141723B (de) * 1960-06-10 1962-12-27 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung mit einem n-leitenden Siliziumkristall, insbesondere eines Flaechentransistors vom pnp-Typ
BE624904A (fr) * 1961-11-17
GB1050417A (fr) * 1963-07-09
US3283223A (en) * 1963-12-27 1966-11-01 Ibm Transistor and method of fabrication to minimize surface recombination effects
US3420719A (en) * 1965-05-27 1969-01-07 Ibm Method of making semiconductors by laser induced diffusion
US3514346A (en) * 1965-08-02 1970-05-26 Gen Electric Semiconductive devices having asymmetrically conductive junction
DE1514563A1 (de) * 1965-09-07 1969-06-19 Semikron Gleichrichterbau Steuerbares Halbleiterbauelement
GB1110654A (en) * 1965-12-24 1968-04-24 Standard Telephones Cables Ltd Semiconductor devices
US3432732A (en) * 1966-03-31 1969-03-11 Tokyo Shibaura Electric Co Semiconductive electromechanical transducers
US3479234A (en) * 1967-05-01 1969-11-18 Gen Electric Method of producing field effect transistors
DE1803883A1 (de) * 1968-10-18 1970-05-27 Siemens Ag Durch mindestens zwei abstimmbare Kapazitaetsdioden gesteuerte elektrische Anordnung
US3571674A (en) * 1969-01-10 1971-03-23 Fairchild Camera Instr Co Fast switching pnp transistor
US3936319A (en) * 1973-10-30 1976-02-03 General Electric Company Solar cell
JPS5176081A (en) * 1974-12-26 1976-07-01 Sanyo Electric Co Yokogatatoranjisutanoseizohoho
JPS5914899B2 (ja) * 1975-09-09 1984-04-06 三菱電機株式会社 半導体装置及びその製造方法
US4125855A (en) * 1977-03-28 1978-11-14 Bell Telephone Laboratories, Incorporated Integrated semiconductor crosspoint arrangement
DE2926785C2 (de) * 1979-07-03 1985-12-12 HIGRATHERM electric GmbH, 7100 Heilbronn Bipolarer Transistor und Verfahren zu seiner Herstellung
JPS59210668A (ja) * 1983-05-16 1984-11-29 Fujitsu Ltd 半導体装置
JPS60110158A (ja) * 1983-11-21 1985-06-15 Nec Corp 半導体装置
JP2603342B2 (ja) * 1988-10-02 1997-04-23 キヤノン株式会社 結晶物品及びその形成方法
US7071784B2 (en) * 2002-11-29 2006-07-04 Linear Technology Corporation High linearity digital variable gain amplifier

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2666814A (en) * 1949-04-27 1954-01-19 Bell Telephone Labor Inc Semiconductor translating device
BE500302A (fr) * 1949-11-30
US2728034A (en) * 1950-09-08 1955-12-20 Rca Corp Semi-conductor devices with opposite conductivity zones
BE506280A (fr) * 1950-10-10
NL113882C (fr) * 1952-06-13
US2764642A (en) * 1952-10-31 1956-09-25 Bell Telephone Labor Inc Semiconductor signal translating devices
US2705767A (en) * 1952-11-18 1955-04-05 Gen Electric P-n junction transistor
NL94129C (fr) * 1952-12-29
BE525387A (fr) * 1952-12-29 1900-01-01
NL85504C (fr) * 1953-05-01
US2792539A (en) * 1953-07-07 1957-05-14 Sprague Electric Co Transistor construction
US2820154A (en) * 1954-11-15 1958-01-14 Rca Corp Semiconductor devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1080696B (de) * 1956-12-10 1960-04-28 Stanislas Teszner Transistor, insbesondere Unipolartransistor, mit einem ebenen Halbleiterkoerper und halbleitenden, zylindrischen Zaehnen auf dessen Oberflaeche und Verfahren zu seiner Herstellung
DE1117222B (de) * 1958-10-23 1961-11-16 Shockley Transistor Corp Verfahren zur Herstellung eines Unipolartransistors
DE1144403B (de) * 1959-05-13 1963-02-28 Ass Elect Ind Leistungstransistor

Also Published As

Publication number Publication date
US2837704A (en) 1958-06-03
DE1073111B (de) 1960-01-14
US2929006A (en) 1960-03-15

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