FR1135760A - Transistor à surface - Google Patents
Transistor à surfaceInfo
- Publication number
- FR1135760A FR1135760A FR1135760DA FR1135760A FR 1135760 A FR1135760 A FR 1135760A FR 1135760D A FR1135760D A FR 1135760DA FR 1135760 A FR1135760 A FR 1135760A
- Authority
- FR
- France
- Prior art keywords
- surface transistor
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/50—Alloying conductive materials with semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W42/00—Arrangements for protection of devices
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2929006X | 1954-12-02 | ||
| DES0041859 | 1954-12-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR1135760A true FR1135760A (fr) | 1957-05-03 |
Family
ID=32394888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR1135760D Expired FR1135760A (fr) | 1954-12-02 | 1955-04-06 | Transistor à surface |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US2929006A (fr) |
| DE (1) | DE1073111B (fr) |
| FR (1) | FR1135760A (fr) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1080696B (de) * | 1956-12-10 | 1960-04-28 | Stanislas Teszner | Transistor, insbesondere Unipolartransistor, mit einem ebenen Halbleiterkoerper und halbleitenden, zylindrischen Zaehnen auf dessen Oberflaeche und Verfahren zu seiner Herstellung |
| DE1117222B (de) * | 1958-10-23 | 1961-11-16 | Shockley Transistor Corp | Verfahren zur Herstellung eines Unipolartransistors |
| DE1144403B (de) * | 1959-05-13 | 1963-02-28 | Ass Elect Ind | Leistungstransistor |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3062690A (en) * | 1955-08-05 | 1962-11-06 | Hoffman Electronics Corp | Semi-conductor device and method of making the same |
| NL222571A (fr) * | 1956-03-05 | 1900-01-01 | ||
| US2980830A (en) * | 1956-08-22 | 1961-04-18 | Shockley William | Junction transistor |
| US2985550A (en) * | 1957-01-04 | 1961-05-23 | Texas Instruments Inc | Production of high temperature alloyed semiconductors |
| US3187241A (en) * | 1957-03-27 | 1965-06-01 | Rca Corp | Transistor with emitter at bottom of groove extending crosswise the base |
| US2967985A (en) * | 1957-04-11 | 1961-01-10 | Shockley | Transistor structure |
| BE574814A (fr) * | 1958-01-16 | |||
| US2967344A (en) * | 1958-02-14 | 1961-01-10 | Rca Corp | Semiconductor devices |
| US2985805A (en) * | 1958-03-05 | 1961-05-23 | Rca Corp | Semiconductor devices |
| US3111590A (en) * | 1958-06-05 | 1963-11-19 | Clevite Corp | Transistor structure controlled by an avalanche barrier |
| US3083441A (en) * | 1959-04-13 | 1963-04-02 | Texas Instruments Inc | Method for fabricating transistors |
| DE1133038B (de) * | 1960-05-10 | 1962-07-12 | Siemens Ag | Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper undvier Zonen abwechselnden Leitfaehigkeitstyps |
| DE1141723B (de) * | 1960-06-10 | 1962-12-27 | Siemens Ag | Verfahren zur Herstellung einer Halbleiteranordnung mit einem n-leitenden Siliziumkristall, insbesondere eines Flaechentransistors vom pnp-Typ |
| BE624904A (fr) * | 1961-11-17 | |||
| GB1050417A (fr) * | 1963-07-09 | |||
| US3283223A (en) * | 1963-12-27 | 1966-11-01 | Ibm | Transistor and method of fabrication to minimize surface recombination effects |
| US3420719A (en) * | 1965-05-27 | 1969-01-07 | Ibm | Method of making semiconductors by laser induced diffusion |
| US3514346A (en) * | 1965-08-02 | 1970-05-26 | Gen Electric | Semiconductive devices having asymmetrically conductive junction |
| DE1514563A1 (de) * | 1965-09-07 | 1969-06-19 | Semikron Gleichrichterbau | Steuerbares Halbleiterbauelement |
| GB1110654A (en) * | 1965-12-24 | 1968-04-24 | Standard Telephones Cables Ltd | Semiconductor devices |
| US3432732A (en) * | 1966-03-31 | 1969-03-11 | Tokyo Shibaura Electric Co | Semiconductive electromechanical transducers |
| US3479234A (en) * | 1967-05-01 | 1969-11-18 | Gen Electric | Method of producing field effect transistors |
| DE1803883A1 (de) * | 1968-10-18 | 1970-05-27 | Siemens Ag | Durch mindestens zwei abstimmbare Kapazitaetsdioden gesteuerte elektrische Anordnung |
| US3571674A (en) * | 1969-01-10 | 1971-03-23 | Fairchild Camera Instr Co | Fast switching pnp transistor |
| US3936319A (en) * | 1973-10-30 | 1976-02-03 | General Electric Company | Solar cell |
| JPS5176081A (en) * | 1974-12-26 | 1976-07-01 | Sanyo Electric Co | Yokogatatoranjisutanoseizohoho |
| JPS5914899B2 (ja) * | 1975-09-09 | 1984-04-06 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
| US4125855A (en) * | 1977-03-28 | 1978-11-14 | Bell Telephone Laboratories, Incorporated | Integrated semiconductor crosspoint arrangement |
| DE2926785C2 (de) * | 1979-07-03 | 1985-12-12 | HIGRATHERM electric GmbH, 7100 Heilbronn | Bipolarer Transistor und Verfahren zu seiner Herstellung |
| JPS59210668A (ja) * | 1983-05-16 | 1984-11-29 | Fujitsu Ltd | 半導体装置 |
| JPS60110158A (ja) * | 1983-11-21 | 1985-06-15 | Nec Corp | 半導体装置 |
| JP2603342B2 (ja) * | 1988-10-02 | 1997-04-23 | キヤノン株式会社 | 結晶物品及びその形成方法 |
| US7071784B2 (en) * | 2002-11-29 | 2006-07-04 | Linear Technology Corporation | High linearity digital variable gain amplifier |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2666814A (en) * | 1949-04-27 | 1954-01-19 | Bell Telephone Labor Inc | Semiconductor translating device |
| BE500302A (fr) * | 1949-11-30 | |||
| US2728034A (en) * | 1950-09-08 | 1955-12-20 | Rca Corp | Semi-conductor devices with opposite conductivity zones |
| BE506280A (fr) * | 1950-10-10 | |||
| NL113882C (fr) * | 1952-06-13 | |||
| US2764642A (en) * | 1952-10-31 | 1956-09-25 | Bell Telephone Labor Inc | Semiconductor signal translating devices |
| US2705767A (en) * | 1952-11-18 | 1955-04-05 | Gen Electric | P-n junction transistor |
| NL94129C (fr) * | 1952-12-29 | |||
| BE525387A (fr) * | 1952-12-29 | 1900-01-01 | ||
| NL85504C (fr) * | 1953-05-01 | |||
| US2792539A (en) * | 1953-07-07 | 1957-05-14 | Sprague Electric Co | Transistor construction |
| US2820154A (en) * | 1954-11-15 | 1958-01-14 | Rca Corp | Semiconductor devices |
-
0
- DE DENDAT1073111D patent/DE1073111B/de active Pending
- US US2837704D patent/US2837704A/en not_active Expired - Lifetime
-
1955
- 1955-04-06 FR FR1135760D patent/FR1135760A/fr not_active Expired
- 1955-11-25 US US548923A patent/US2929006A/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1080696B (de) * | 1956-12-10 | 1960-04-28 | Stanislas Teszner | Transistor, insbesondere Unipolartransistor, mit einem ebenen Halbleiterkoerper und halbleitenden, zylindrischen Zaehnen auf dessen Oberflaeche und Verfahren zu seiner Herstellung |
| DE1117222B (de) * | 1958-10-23 | 1961-11-16 | Shockley Transistor Corp | Verfahren zur Herstellung eines Unipolartransistors |
| DE1144403B (de) * | 1959-05-13 | 1963-02-28 | Ass Elect Ind | Leistungstransistor |
Also Published As
| Publication number | Publication date |
|---|---|
| US2837704A (en) | 1958-06-03 |
| DE1073111B (de) | 1960-01-14 |
| US2929006A (en) | 1960-03-15 |
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