FR1206714A - Perfectionnements apportés aux transistors - Google Patents

Perfectionnements apportés aux transistors

Info

Publication number
FR1206714A
FR1206714A FR1206714DA FR1206714A FR 1206714 A FR1206714 A FR 1206714A FR 1206714D A FR1206714D A FR 1206714DA FR 1206714 A FR1206714 A FR 1206714A
Authority
FR
France
Prior art keywords
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of FR1206714A publication Critical patent/FR1206714A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/16Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a liquid phase
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50Alloying conductive materials with semiconductor bodies

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Electron Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
FR1206714D 1957-05-06 1958-05-05 Perfectionnements apportés aux transistors Expired FR1206714A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US657355A US2943006A (en) 1957-05-06 1957-05-06 Diffused transistors and processes for making the same

Publications (1)

Publication Number Publication Date
FR1206714A true FR1206714A (fr) 1960-02-11

Family

ID=24636825

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1206714D Expired FR1206714A (fr) 1957-05-06 1958-05-05 Perfectionnements apportés aux transistors

Country Status (5)

Country Link
US (1) US2943006A (fr)
CH (1) CH359790A (fr)
DE (1) DE1414538A1 (fr)
FR (1) FR1206714A (fr)
GB (1) GB865471A (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3007090A (en) * 1957-09-04 1961-10-31 Ibm Back resistance control for junction semiconductor devices
US3065392A (en) * 1958-02-07 1962-11-20 Rca Corp Semiconductor devices
US3154692A (en) * 1960-01-08 1964-10-27 Clevite Corp Voltage regulating semiconductor device
NL263771A (fr) * 1960-04-26
NL257150A (fr) * 1960-10-22 1900-01-01
DE1175797B (de) * 1960-12-22 1964-08-13 Standard Elektrik Lorenz Ag Verfahren zum Herstellen von elektrischen Halb-leiterbauelementen
US3188244A (en) * 1961-04-24 1965-06-08 Tektronix Inc Method of forming pn junction in semiconductor material
US3258371A (en) * 1962-02-01 1966-06-28 Semiconductor Res Found Silicon semiconductor device for high frequency, and method of its manufacture
US3307088A (en) * 1962-03-13 1967-02-28 Fujikawa Kyoichi Silver-lead alloy contacts containing dopants for semiconductors
US3257589A (en) * 1962-05-22 1966-06-21 Texas Instruments Inc Transistors and the fabrication thereof
US3268375A (en) * 1962-05-22 1966-08-23 Gordon J Ratcliff Alloy-diffusion process for fabricating germanium transistors
CH396228A (de) * 1962-05-29 1965-07-31 Siemens Ag Verfahren zum Erzeugen einer hochdotierten p-leitenden Zone in einem Halbleiterkörper, insbesondere aus Silizium
US3309244A (en) * 1963-03-22 1967-03-14 Motorola Inc Alloy-diffused method for producing semiconductor devices
US3513041A (en) * 1967-06-19 1970-05-19 Motorola Inc Fabrication of a germanium diffused base power transistor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1103544A (fr) * 1953-05-25 1955-11-03 Rca Corp Dispositifs semi-conducteurs, et procédé de fabrication de ceux-ci

Also Published As

Publication number Publication date
CH359790A (de) 1962-01-31
US2943006A (en) 1960-06-28
GB865471A (en) 1961-04-19
DE1414538A1 (de) 1968-12-19

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