FR1212132A - Perfectionnements aux dispositifs semi-conducteurs à jonction et méthode de fabrication de ceux-ci - Google Patents

Perfectionnements aux dispositifs semi-conducteurs à jonction et méthode de fabrication de ceux-ci

Info

Publication number
FR1212132A
FR1212132A FR1212132DA FR1212132A FR 1212132 A FR1212132 A FR 1212132A FR 1212132D A FR1212132D A FR 1212132DA FR 1212132 A FR1212132 A FR 1212132A
Authority
FR
France
Prior art keywords
making
semiconductor devices
junction semiconductor
junction
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
French (fr)
Inventor
Arthur Tisso Starr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB25388/57A external-priority patent/GB815699A/en
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Priority claimed from GB12744/59A external-priority patent/GB870599A/en
Application granted granted Critical
Publication of FR1212132A publication Critical patent/FR1212132A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
FR1212132D 1957-08-12 1958-08-11 Perfectionnements aux dispositifs semi-conducteurs à jonction et méthode de fabrication de ceux-ci Expired FR1212132A (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB25388/57A GB815699A (en) 1959-05-29 1957-08-12 Improvements in or relating to semi-conductor devices and methods of manufacture thereof
GB12744/59A GB870599A (en) 1959-04-15 1959-04-15 Improvements in or relating to semi-conductor crystal rectifiers and methods of manufacture thereof
GB18357/59A GB874349A (en) 1957-08-12 1959-05-29 Improvements in or relating to semiconductor devices
FR824364A FR77527E (fr) 1957-08-12 1960-04-14 Perfectionnements aux dispositifs semi-conducteurs à jonction et méthode de fabrication de ceux-ci

Publications (1)

Publication Number Publication Date
FR1212132A true FR1212132A (fr) 1960-03-22

Family

ID=62527908

Family Applications (2)

Application Number Title Priority Date Filing Date
FR1212132D Expired FR1212132A (fr) 1957-08-12 1958-08-11 Perfectionnements aux dispositifs semi-conducteurs à jonction et méthode de fabrication de ceux-ci
FR824364A Expired FR77527E (fr) 1957-08-12 1960-04-14 Perfectionnements aux dispositifs semi-conducteurs à jonction et méthode de fabrication de ceux-ci

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR824364A Expired FR77527E (fr) 1957-08-12 1960-04-14 Perfectionnements aux dispositifs semi-conducteurs à jonction et méthode de fabrication de ceux-ci

Country Status (4)

Country Link
BE (1) BE570279A (2)
CH (1) CH365804A (2)
FR (2) FR1212132A (2)
GB (1) GB874349A (2)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1246127B (de) * 1962-07-31 1967-08-03 Rca Corp Verfahren zum Aufbringen von metallischen Elektroden auf Bereichen der Oberflaeche eines pn-UEbergaenge enthaltenden Halbleiterkoerpers

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1225304B (de) * 1961-11-16 1966-09-22 Telefunken Patent Diffusionsverfahren zum Herstellen eines Halbleiterbauelementes
US3475660A (en) * 1967-12-01 1969-10-28 Int Rectifier Corp Hollow cylindrical semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1246127B (de) * 1962-07-31 1967-08-03 Rca Corp Verfahren zum Aufbringen von metallischen Elektroden auf Bereichen der Oberflaeche eines pn-UEbergaenge enthaltenden Halbleiterkoerpers

Also Published As

Publication number Publication date
GB874349A (en) 1961-08-02
CH365804A (de) 1962-11-30
BE570279A (2) 1900-01-01
FR77527E (fr) 1962-03-16

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