FR1213751A - Procédé de fabrication de transistrons à jonctions n-p-n obtenues par double diffusion - Google Patents

Procédé de fabrication de transistrons à jonctions n-p-n obtenues par double diffusion

Info

Publication number
FR1213751A
FR1213751A FR1213751DA FR1213751A FR 1213751 A FR1213751 A FR 1213751A FR 1213751D A FR1213751D A FR 1213751DA FR 1213751 A FR1213751 A FR 1213751A
Authority
FR
France
Prior art keywords
transistrons
manufacturing
double diffusion
junctions obtained
junctions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe Anonyme de Telecommunications SAT
Original Assignee
Societe Anonyme de Telecommunications SAT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe Anonyme de Telecommunications SAT filed Critical Societe Anonyme de Telecommunications SAT
Application granted granted Critical
Publication of FR1213751A publication Critical patent/FR1213751A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies
FR1213751D 1958-10-27 1958-10-27 Procédé de fabrication de transistrons à jonctions n-p-n obtenues par double diffusion Expired FR1213751A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1213751T 1958-10-27

Publications (1)

Publication Number Publication Date
FR1213751A true FR1213751A (fr) 1960-04-04

Family

ID=9676653

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1213751D Expired FR1213751A (fr) 1958-10-27 1958-10-27 Procédé de fabrication de transistrons à jonctions n-p-n obtenues par double diffusion

Country Status (1)

Country Link
FR (1) FR1213751A (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1133039B (de) * 1960-05-10 1962-07-12 Siemens Ag Verfahren zum Herstellen eines Halbleiterbauelementes mit einem im wesentlichen einkristallinen und mehrere Zonen abwechselnden Leitfaehigkeitstyp enthaltenden Halbleiterkoerper
DE1154871B (de) * 1961-01-13 1963-09-26 Bbc Brown Boveri & Cie Verfahren zum Herstellen von Halbleiterbauelementen mit wenigstens einem pn-UEbergang
FR2003233A1 (fr) * 1968-03-05 1969-11-07 Lucas Industries Ltd Dispositif semi-conducteur et son procede de fabrication
DE1539625B1 (de) * 1965-01-30 1971-11-11 Allmaenna Svenska Elek Ska Ab Schaltungsanordnung zum betrieb eines steuerbaren halbleiter bauelementes und steuerbares halbleiterbauelement fuer diese schaltungsanordnung

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1133039B (de) * 1960-05-10 1962-07-12 Siemens Ag Verfahren zum Herstellen eines Halbleiterbauelementes mit einem im wesentlichen einkristallinen und mehrere Zonen abwechselnden Leitfaehigkeitstyp enthaltenden Halbleiterkoerper
DE1154871B (de) * 1961-01-13 1963-09-26 Bbc Brown Boveri & Cie Verfahren zum Herstellen von Halbleiterbauelementen mit wenigstens einem pn-UEbergang
DE1539625B1 (de) * 1965-01-30 1971-11-11 Allmaenna Svenska Elek Ska Ab Schaltungsanordnung zum betrieb eines steuerbaren halbleiter bauelementes und steuerbares halbleiterbauelement fuer diese schaltungsanordnung
FR2003233A1 (fr) * 1968-03-05 1969-11-07 Lucas Industries Ltd Dispositif semi-conducteur et son procede de fabrication

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