FR1243865A - Perfectionnement à la réalisation des diodes de commutation p-n-p-n au silicium - Google Patents

Perfectionnement à la réalisation des diodes de commutation p-n-p-n au silicium

Info

Publication number
FR1243865A
FR1243865A FR804544A FR804544A FR1243865A FR 1243865 A FR1243865 A FR 1243865A FR 804544 A FR804544 A FR 804544A FR 804544 A FR804544 A FR 804544A FR 1243865 A FR1243865 A FR 1243865A
Authority
FR
France
Prior art keywords
realization
improvement
switching diodes
silicon switching
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR804544A
Other languages
English (en)
Inventor
Jean-Claude Solera
Maurice-Raymond Charles
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe Anonyme de Telecommunications SAT
Original Assignee
Societe Anonyme de Telecommunications SAT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe Anonyme de Telecommunications SAT filed Critical Societe Anonyme de Telecommunications SAT
Priority to FR804544A priority Critical patent/FR1243865A/fr
Application granted granted Critical
Publication of FR1243865A publication Critical patent/FR1243865A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/16—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a liquid phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
FR804544A 1959-09-08 1959-09-08 Perfectionnement à la réalisation des diodes de commutation p-n-p-n au silicium Expired FR1243865A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR804544A FR1243865A (fr) 1959-09-08 1959-09-08 Perfectionnement à la réalisation des diodes de commutation p-n-p-n au silicium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR804544A FR1243865A (fr) 1959-09-08 1959-09-08 Perfectionnement à la réalisation des diodes de commutation p-n-p-n au silicium

Publications (1)

Publication Number Publication Date
FR1243865A true FR1243865A (fr) 1960-10-21

Family

ID=8718921

Family Applications (1)

Application Number Title Priority Date Filing Date
FR804544A Expired FR1243865A (fr) 1959-09-08 1959-09-08 Perfectionnement à la réalisation des diodes de commutation p-n-p-n au silicium

Country Status (1)

Country Link
FR (1) FR1243865A (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1207512B (de) * 1961-03-01 1965-12-23 Telefunken Patent Verfahren zum Herstellen von Halbleiter-bauelementen mit einem plaettchenfoermigen Halbleiterkoerper
DE1246890B (de) * 1960-09-20 1967-08-10 Western Electric Co Diffusionsverfahren zum Herstellen eines Halbleiterbauelements
DE1273699B (de) * 1963-05-30 1968-07-25 Licentia Gmbh Verfahren zum Kontaktieren von mindestens zwei benachbarten Zonen entgegengesetzten Leitungstyps eines steuerbaren Halbleiterbauelementes
US3491272A (en) * 1963-01-30 1970-01-20 Gen Electric Semiconductor devices with increased voltage breakdown characteristics

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1246890B (de) * 1960-09-20 1967-08-10 Western Electric Co Diffusionsverfahren zum Herstellen eines Halbleiterbauelements
DE1207512B (de) * 1961-03-01 1965-12-23 Telefunken Patent Verfahren zum Herstellen von Halbleiter-bauelementen mit einem plaettchenfoermigen Halbleiterkoerper
US3491272A (en) * 1963-01-30 1970-01-20 Gen Electric Semiconductor devices with increased voltage breakdown characteristics
DE1273699B (de) * 1963-05-30 1968-07-25 Licentia Gmbh Verfahren zum Kontaktieren von mindestens zwei benachbarten Zonen entgegengesetzten Leitungstyps eines steuerbaren Halbleiterbauelementes

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