FR1260954A - Commutateur à semi-conducteur - Google Patents

Commutateur à semi-conducteur

Info

Publication number
FR1260954A
FR1260954A FR830376A FR830376A FR1260954A FR 1260954 A FR1260954 A FR 1260954A FR 830376 A FR830376 A FR 830376A FR 830376 A FR830376 A FR 830376A FR 1260954 A FR1260954 A FR 1260954A
Authority
FR
France
Prior art keywords
semiconductor switch
semiconductor
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR830376A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US820926A external-priority patent/US3078196A/en
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Priority to FR830376A priority Critical patent/FR1260954A/fr
Application granted granted Critical
Publication of FR1260954A publication Critical patent/FR1260954A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/645—Combinations of only lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies
FR830376A 1959-06-17 1960-06-17 Commutateur à semi-conducteur Expired FR1260954A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR830376A FR1260954A (fr) 1959-06-17 1960-06-17 Commutateur à semi-conducteur

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US820926A US3078196A (en) 1959-06-17 1959-06-17 Semiconductive switch
FR830376A FR1260954A (fr) 1959-06-17 1960-06-17 Commutateur à semi-conducteur

Publications (1)

Publication Number Publication Date
FR1260954A true FR1260954A (fr) 1961-05-12

Family

ID=26186446

Family Applications (1)

Application Number Title Priority Date Filing Date
FR830376A Expired FR1260954A (fr) 1959-06-17 1960-06-17 Commutateur à semi-conducteur

Country Status (1)

Country Link
FR (1) FR1260954A (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1216435B (de) * 1963-03-14 1966-05-12 Int Standard Electric Corp Schaltbares Halbleiterbauelement mit vier Zonen
DE1239025B (de) * 1961-10-27 1967-04-20 Westinghouse Electric Corp Elektrisch schalterartig steuerbares Halbleiterbauelement mit vier Schichten abwechselnd entgegengesetzten Leitungstyps
DE1269252B (de) * 1961-05-18 1968-05-30 Itt Ind Ges Mit Beschraenkter Lichtempfindlicher Halbleiterschalter und Verfahren zu seiner Herstellung
DE1293902B (de) * 1964-05-26 1969-04-30 Telefunken Patent Schottky-Diode und Verfahren zu ihrer Herstellung

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1269252B (de) * 1961-05-18 1968-05-30 Itt Ind Ges Mit Beschraenkter Lichtempfindlicher Halbleiterschalter und Verfahren zu seiner Herstellung
DE1239025B (de) * 1961-10-27 1967-04-20 Westinghouse Electric Corp Elektrisch schalterartig steuerbares Halbleiterbauelement mit vier Schichten abwechselnd entgegengesetzten Leitungstyps
DE1216435B (de) * 1963-03-14 1966-05-12 Int Standard Electric Corp Schaltbares Halbleiterbauelement mit vier Zonen
DE1293902B (de) * 1964-05-26 1969-04-30 Telefunken Patent Schottky-Diode und Verfahren zu ihrer Herstellung

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