FR1270844A - Procédé pour la fabrication de cristaux en forme de tiges en matière semiconductrice - Google Patents

Procédé pour la fabrication de cristaux en forme de tiges en matière semiconductrice

Info

Publication number
FR1270844A
FR1270844A FR838770A FR838770A FR1270844A FR 1270844 A FR1270844 A FR 1270844A FR 838770 A FR838770 A FR 838770A FR 838770 A FR838770 A FR 838770A FR 1270844 A FR1270844 A FR 1270844A
Authority
FR
France
Prior art keywords
rod
production
semiconductor material
shaped crystals
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR838770A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Priority to FR838770A priority Critical patent/FR1270844A/fr
Application granted granted Critical
Publication of FR1270844A publication Critical patent/FR1270844A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/34—Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
FR838770A 1959-09-18 1960-09-16 Procédé pour la fabrication de cristaux en forme de tiges en matière semiconductrice Expired FR1270844A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR838770A FR1270844A (fr) 1959-09-18 1960-09-16 Procédé pour la fabrication de cristaux en forme de tiges en matière semiconductrice

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL243511 1959-09-18
FR838770A FR1270844A (fr) 1959-09-18 1960-09-16 Procédé pour la fabrication de cristaux en forme de tiges en matière semiconductrice

Publications (1)

Publication Number Publication Date
FR1270844A true FR1270844A (fr) 1961-09-01

Family

ID=26187514

Family Applications (1)

Application Number Title Priority Date Filing Date
FR838770A Expired FR1270844A (fr) 1959-09-18 1960-09-16 Procédé pour la fabrication de cristaux en forme de tiges en matière semiconductrice

Country Status (1)

Country Link
FR (1) FR1270844A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2109874A1 (de) * 1970-03-02 1971-09-16 Hitachi Ltd Halbleitereinrichtung mit einem monokristallinen Siliziumkoerper
FR2125358A1 (fr) * 1971-02-11 1972-09-29 Dow Corning

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2109874A1 (de) * 1970-03-02 1971-09-16 Hitachi Ltd Halbleitereinrichtung mit einem monokristallinen Siliziumkoerper
FR2125358A1 (fr) * 1971-02-11 1972-09-29 Dow Corning

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