FR1280376A - Procédé de formation d'une jonction p-nu - Google Patents
Procédé de formation d'une jonction p-nuInfo
- Publication number
- FR1280376A FR1280376A FR852687A FR852687A FR1280376A FR 1280376 A FR1280376 A FR 1280376A FR 852687 A FR852687 A FR 852687A FR 852687 A FR852687 A FR 852687A FR 1280376 A FR1280376 A FR 1280376A
- Authority
- FR
- France
- Prior art keywords
- junction
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
- H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/18—Diffusion lifetime killers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/062—Gold diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/917—Deep level dopants, e.g. gold, chromium, iron or nickel
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/918—Special or nonstandard dopant
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US8621A US3109760A (en) | 1960-02-15 | 1960-02-15 | P-nu junction and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR1280376A true FR1280376A (fr) | 1961-12-29 |
Family
ID=21732658
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR852687A Expired FR1280376A (fr) | 1960-02-15 | 1961-02-14 | Procédé de formation d'une jonction p-nu |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3109760A (fr) |
| DE (1) | DE1159098B (fr) |
| FR (1) | FR1280376A (fr) |
| GB (1) | GB978849A (fr) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3225416A (en) * | 1958-11-20 | 1965-12-28 | Int Rectifier Corp | Method of making a transistor containing a multiplicity of depressions |
| US3377215A (en) * | 1961-09-29 | 1968-04-09 | Texas Instruments Inc | Diode array |
| NL290498A (fr) * | 1962-03-24 | |||
| US3312881A (en) * | 1963-11-08 | 1967-04-04 | Ibm | Transistor with limited area basecollector junction |
| DE1544271A1 (de) * | 1965-11-11 | 1969-02-27 | Siemens Ag | Verfahren zum Einbringen von Mangan in zum Herstellen elektronischer Halbleiterelemente dienende Halbleiterkoerper |
| US3440113A (en) * | 1966-09-19 | 1969-04-22 | Westinghouse Electric Corp | Process for diffusing gold into semiconductor material |
| DE2230749C3 (de) * | 1972-06-23 | 1978-11-30 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum Herstellen von Halbleiterbauelementen |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB632980A (en) * | 1945-12-29 | 1949-12-05 | Western Electric Co | Methods of treating germanium material |
| BE500302A (fr) * | 1949-11-30 | |||
| US2833969A (en) * | 1953-12-01 | 1958-05-06 | Rca Corp | Semi-conductor devices and methods of making same |
| US2860218A (en) * | 1954-02-04 | 1958-11-11 | Gen Electric | Germanium current controlling devices |
| DE1006531B (de) * | 1954-07-29 | 1957-04-18 | Gen Electric | Asymmetrisch leitende Halbleiteranordnung |
| DE1043472B (de) * | 1956-02-06 | 1958-11-13 | Siemens Ag | Halbleiterbauelement zur Stromstabilisierung |
| NL125999C (fr) * | 1958-07-17 |
-
1960
- 1960-02-15 US US8621A patent/US3109760A/en not_active Expired - Lifetime
-
1961
- 1961-02-01 DE DEJ19352A patent/DE1159098B/de active Pending
- 1961-02-14 GB GB5405/61A patent/GB978849A/en not_active Expired
- 1961-02-14 FR FR852687A patent/FR1280376A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB978849A (en) | 1964-12-23 |
| DE1159098B (de) | 1963-12-12 |
| US3109760A (en) | 1963-11-05 |
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