FR1280376A - Procédé de formation d'une jonction p-nu - Google Patents

Procédé de formation d'une jonction p-nu

Info

Publication number
FR1280376A
FR1280376A FR852687A FR852687A FR1280376A FR 1280376 A FR1280376 A FR 1280376A FR 852687 A FR852687 A FR 852687A FR 852687 A FR852687 A FR 852687A FR 1280376 A FR1280376 A FR 1280376A
Authority
FR
France
Prior art keywords
junction
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR852687A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Clevite Corp
Original Assignee
Clevite Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clevite Corp filed Critical Clevite Corp
Application granted granted Critical
Publication of FR1280376A publication Critical patent/FR1280376A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/18Diffusion lifetime killers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/062Gold diffusion
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/914Doping
    • Y10S438/917Deep level dopants, e.g. gold, chromium, iron or nickel
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/914Doping
    • Y10S438/918Special or nonstandard dopant
FR852687A 1960-02-15 1961-02-14 Procédé de formation d'une jonction p-nu Expired FR1280376A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8621A US3109760A (en) 1960-02-15 1960-02-15 P-nu junction and method

Publications (1)

Publication Number Publication Date
FR1280376A true FR1280376A (fr) 1961-12-29

Family

ID=21732658

Family Applications (1)

Application Number Title Priority Date Filing Date
FR852687A Expired FR1280376A (fr) 1960-02-15 1961-02-14 Procédé de formation d'une jonction p-nu

Country Status (4)

Country Link
US (1) US3109760A (fr)
DE (1) DE1159098B (fr)
FR (1) FR1280376A (fr)
GB (1) GB978849A (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3225416A (en) * 1958-11-20 1965-12-28 Int Rectifier Corp Method of making a transistor containing a multiplicity of depressions
US3377215A (en) * 1961-09-29 1968-04-09 Texas Instruments Inc Diode array
NL290498A (fr) * 1962-03-24
US3312881A (en) * 1963-11-08 1967-04-04 Ibm Transistor with limited area basecollector junction
DE1544271A1 (de) * 1965-11-11 1969-02-27 Siemens Ag Verfahren zum Einbringen von Mangan in zum Herstellen elektronischer Halbleiterelemente dienende Halbleiterkoerper
US3440113A (en) * 1966-09-19 1969-04-22 Westinghouse Electric Corp Process for diffusing gold into semiconductor material
DE2230749C3 (de) * 1972-06-23 1978-11-30 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen von Halbleiterbauelementen

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB632980A (en) * 1945-12-29 1949-12-05 Western Electric Co Methods of treating germanium material
BE500302A (fr) * 1949-11-30
US2833969A (en) * 1953-12-01 1958-05-06 Rca Corp Semi-conductor devices and methods of making same
US2860218A (en) * 1954-02-04 1958-11-11 Gen Electric Germanium current controlling devices
DE1006531B (de) * 1954-07-29 1957-04-18 Gen Electric Asymmetrisch leitende Halbleiteranordnung
DE1043472B (de) * 1956-02-06 1958-11-13 Siemens Ag Halbleiterbauelement zur Stromstabilisierung
NL125999C (fr) * 1958-07-17

Also Published As

Publication number Publication date
GB978849A (en) 1964-12-23
DE1159098B (de) 1963-12-12
US3109760A (en) 1963-11-05

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