FR1284534A - Fabrication de dispositifs semi-conducteurs - Google Patents

Fabrication de dispositifs semi-conducteurs

Info

Publication number
FR1284534A
FR1284534A FR826417A FR826417A FR1284534A FR 1284534 A FR1284534 A FR 1284534A FR 826417 A FR826417 A FR 826417A FR 826417 A FR826417 A FR 826417A FR 1284534 A FR1284534 A FR 1284534A
Authority
FR
France
Prior art keywords
semiconductor device
device manufacturing
manufacturing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR826417A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US811470A external-priority patent/US3072832A/en
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Priority to FR826417A priority Critical patent/FR1284534A/fr
Application granted granted Critical
Publication of FR1284534A publication Critical patent/FR1284534A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/411Chip-supporting parts, e.g. die pads
    • H10W70/415Leadframe inner leads serving as die pads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65Shapes or dispositions of interconnections
    • H10W70/658Shapes or dispositions of interconnections for devices provided for in groups H10D8/00 - H10D48/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10Containers or parts thereof
    • H10W76/12Containers or parts thereof characterised by their shape
    • H10W76/15Containers comprising an insulating or insulated base
    • H10W76/157Containers comprising an insulating or insulated base having interconnections parallel to the insulating or insulated base
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/547Dispositions of multiple bond wires
    • H10W72/5473Dispositions of multiple bond wires multiple bond wires connected to a common bond pad

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
FR826417A 1959-05-06 1960-05-06 Fabrication de dispositifs semi-conducteurs Expired FR1284534A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR826417A FR1284534A (fr) 1959-05-06 1960-05-06 Fabrication de dispositifs semi-conducteurs

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US811470A US3072832A (en) 1959-05-06 1959-05-06 Semiconductor structure fabrication
FR826417A FR1284534A (fr) 1959-05-06 1960-05-06 Fabrication de dispositifs semi-conducteurs
US46742865A 1965-06-28 1965-06-28
US60972067A 1967-01-13 1967-01-13

Publications (1)

Publication Number Publication Date
FR1284534A true FR1284534A (fr) 1962-02-16

Family

ID=27445172

Family Applications (1)

Application Number Title Priority Date Filing Date
FR826417A Expired FR1284534A (fr) 1959-05-06 1960-05-06 Fabrication de dispositifs semi-conducteurs

Country Status (1)

Country Link
FR (1) FR1284534A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1266884B (de) * 1962-10-09 1968-04-25 Philco Ford Corp Eine Ges Nach Verfahren zur Verbindung eines Halbleiterelements mit einer Duennfilm-Schaltung
DE1282188B (de) * 1962-04-16 1968-11-07 Itt Ind G M B H Deutsche Elektrische Halbleiteranordnung mit mehreren voneinander isolierten streifenfoermigen Zuleitungen
EP0100817A3 (en) * 1982-08-05 1986-01-22 Olin Corporation Improved hermetically sealed semiconductor casing

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1282188B (de) * 1962-04-16 1968-11-07 Itt Ind G M B H Deutsche Elektrische Halbleiteranordnung mit mehreren voneinander isolierten streifenfoermigen Zuleitungen
DE1266884B (de) * 1962-10-09 1968-04-25 Philco Ford Corp Eine Ges Nach Verfahren zur Verbindung eines Halbleiterelements mit einer Duennfilm-Schaltung
EP0100817A3 (en) * 1982-08-05 1986-01-22 Olin Corporation Improved hermetically sealed semiconductor casing

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