FR1311629A - Transistor à gain élevé - Google Patents

Transistor à gain élevé

Info

Publication number
FR1311629A
FR1311629A FR884578A FR884578A FR1311629A FR 1311629 A FR1311629 A FR 1311629A FR 884578 A FR884578 A FR 884578A FR 884578 A FR884578 A FR 884578A FR 1311629 A FR1311629 A FR 1311629A
Authority
FR
France
Prior art keywords
high gain
gain transistor
transistor
gain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR884578A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US82020A external-priority patent/US3210617A/en
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Priority to FR884578A priority Critical patent/FR1311629A/fr
Application granted granted Critical
Publication of FR1311629A publication Critical patent/FR1311629A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/347—DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
FR884578A 1961-01-11 1962-01-11 Transistor à gain élevé Expired FR1311629A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR884578A FR1311629A (fr) 1961-01-11 1962-01-11 Transistor à gain élevé

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US82020A US3210617A (en) 1961-01-11 1961-01-11 High gain transistor comprising direct connection between base and emitter electrodes
FR884578A FR1311629A (fr) 1961-01-11 1962-01-11 Transistor à gain élevé

Publications (1)

Publication Number Publication Date
FR1311629A true FR1311629A (fr) 1962-12-07

Family

ID=26193898

Family Applications (1)

Application Number Title Priority Date Filing Date
FR884578A Expired FR1311629A (fr) 1961-01-11 1962-01-11 Transistor à gain élevé

Country Status (1)

Country Link
FR (1) FR1311629A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2064269A1 (fr) * 1969-09-15 1971-07-23 Gen Motors Corp

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2064269A1 (fr) * 1969-09-15 1971-07-23 Gen Motors Corp

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