FR1358573A - Circuit électrique intégré - Google Patents

Circuit électrique intégré

Info

Publication number
FR1358573A
FR1358573A FR926978A FR926978A FR1358573A FR 1358573 A FR1358573 A FR 1358573A FR 926978 A FR926978 A FR 926978A FR 926978 A FR926978 A FR 926978A FR 1358573 A FR1358573 A FR 1358573A
Authority
FR
France
Prior art keywords
electrical circuit
integrated electrical
integrated
circuit
electrical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR926978A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
CSF Compagnie Generale de Telegraphie sans Fil SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CSF Compagnie Generale de Telegraphie sans Fil SA filed Critical CSF Compagnie Generale de Telegraphie sans Fil SA
Priority to FR926978A priority Critical patent/FR1358573A/fr
Priority to GB9257/64A priority patent/GB1024790A/en
Priority to DE1464829A priority patent/DE1464829C3/de
Priority to NL646402246A priority patent/NL145398B/xx
Priority to US349710A priority patent/US3379941A/en
Priority to SE02776/64A priority patent/SE333985B/xx
Application granted granted Critical
Publication of FR1358573A publication Critical patent/FR1358573A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
    • H03F3/165—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices with junction-FET's
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/817—Combinations of field-effect devices and resistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/051—Manufacture or treatment of isolation region based on field-effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/50—Isolation regions based on field-effect
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/136—Resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
FR926978A 1963-03-06 1963-03-06 Circuit électrique intégré Expired FR1358573A (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR926978A FR1358573A (fr) 1963-03-06 1963-03-06 Circuit électrique intégré
GB9257/64A GB1024790A (en) 1963-03-06 1964-03-04 Improved integrated circuit
DE1464829A DE1464829C3 (de) 1963-03-06 1964-03-05 Schaltungsanordnung mit mehreren in einem Halbleiterplättchen ausgebildeten Schaltungselementen
NL646402246A NL145398B (nl) 1963-03-06 1964-03-05 Werkwijze voor het schakelen van een geintegreerde elektrische schakeling, en geintegreerde elektrische schakeling voor het toepassen van deze werkwijze.
US349710A US3379941A (en) 1963-03-06 1964-03-05 Integrated field effect circuitry
SE02776/64A SE333985B (fr) 1963-03-06 1964-03-05

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR926978A FR1358573A (fr) 1963-03-06 1963-03-06 Circuit électrique intégré

Publications (1)

Publication Number Publication Date
FR1358573A true FR1358573A (fr) 1964-04-17

Family

ID=8798547

Family Applications (1)

Application Number Title Priority Date Filing Date
FR926978A Expired FR1358573A (fr) 1963-03-06 1963-03-06 Circuit électrique intégré

Country Status (6)

Country Link
US (1) US3379941A (fr)
DE (1) DE1464829C3 (fr)
FR (1) FR1358573A (fr)
GB (1) GB1024790A (fr)
NL (1) NL145398B (fr)
SE (1) SE333985B (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3539839A (en) * 1966-01-31 1970-11-10 Nippon Electric Co Semiconductor memory device
US4486770A (en) * 1981-04-27 1984-12-04 General Motors Corporation Isolated integrated circuit transistor with transient protection
US5446300A (en) * 1992-11-04 1995-08-29 North American Philips Corporation Semiconductor device configuration with multiple HV-LDMOS transistors and a floating well circuit

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3035186A (en) * 1959-06-15 1962-05-15 Bell Telephone Labor Inc Semiconductor switching apparatus
US3150299A (en) * 1959-09-11 1964-09-22 Fairchild Camera Instr Co Semiconductor circuit complex having isolation means
US3208002A (en) * 1959-09-18 1965-09-21 Texas Instruments Inc Semiconductor integrated circuit device using field-effect transistors
NL260481A (fr) * 1960-02-08
US3242394A (en) * 1960-05-02 1966-03-22 Texas Instruments Inc Voltage variable resistor
NL274363A (fr) * 1960-05-02
US3134912A (en) * 1960-05-02 1964-05-26 Texas Instruments Inc Multivibrator employing field effect devices as transistors and voltage variable resistors in integrated semiconductive structure
US3112411A (en) * 1960-05-02 1963-11-26 Texas Instruments Inc Ring counter utilizing bipolar field-effect devices
US3230398A (en) * 1960-05-02 1966-01-18 Texas Instruments Inc Integrated structure semiconductor network forming bipolar field effect transistor
US3171042A (en) * 1961-09-08 1965-02-23 Bendix Corp Device with combination of unipolar means and tunnel diode means
US3284723A (en) * 1962-07-02 1966-11-08 Westinghouse Electric Corp Oscillatory circuit and monolithic semiconductor device therefor
US3237018A (en) * 1962-07-09 1966-02-22 Honeywell Inc Integrated semiconductor switch

Also Published As

Publication number Publication date
NL6402246A (fr) 1964-09-07
GB1024790A (en) 1966-04-06
DE1464829C3 (de) 1975-10-30
US3379941A (en) 1968-04-23
DE1464829B2 (de) 1975-03-13
NL145398B (nl) 1975-03-17
SE333985B (fr) 1971-04-05
DE1464829A1 (de) 1969-06-26

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