FR1359131A - Procédé pour la croissance épitaxiale de matières semi-conductrices - Google Patents

Procédé pour la croissance épitaxiale de matières semi-conductrices

Info

Publication number
FR1359131A
FR1359131A FR918194A FR918194A FR1359131A FR 1359131 A FR1359131 A FR 1359131A FR 918194 A FR918194 A FR 918194A FR 918194 A FR918194 A FR 918194A FR 1359131 A FR1359131 A FR 1359131A
Authority
FR
France
Prior art keywords
epitaxial growth
semiconductor materials
semiconductor
materials
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR918194A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US158298A external-priority patent/US3156591A/en
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Priority to FR918194A priority Critical patent/FR1359131A/fr
Application granted granted Critical
Publication of FR1359131A publication Critical patent/FR1359131A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2/00Processes or devices for granulating materials, e.g. fertilisers in general; Rendering particulate materials free flowing in general, e.g. making them hydrophobic
    • B01J2/30Processes or devices for granulating materials, e.g. fertilisers in general; Rendering particulate materials free flowing in general, e.g. making them hydrophobic using agents to prevent the granules sticking together; Rendering particulate materials free flowing in general, e.g. making them hydrophobic
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C21/00Alloys based on aluminium
    • C22C21/02Alloys based on aluminium with silicon as the next major constituent
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02Epitaxial-layer growth
    • C30B23/04Pattern deposit, e.g. by using masks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
FR918194A 1961-12-11 1962-12-11 Procédé pour la croissance épitaxiale de matières semi-conductrices Expired FR1359131A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR918194A FR1359131A (fr) 1961-12-11 1962-12-11 Procédé pour la croissance épitaxiale de matières semi-conductrices

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US158298A US3156591A (en) 1961-12-11 1961-12-11 Epitaxial growth through a silicon dioxide mask in a vacuum vapor deposition process
FR918194A FR1359131A (fr) 1961-12-11 1962-12-11 Procédé pour la croissance épitaxiale de matières semi-conductrices

Publications (1)

Publication Number Publication Date
FR1359131A true FR1359131A (fr) 1964-04-24

Family

ID=26198840

Family Applications (1)

Application Number Title Priority Date Filing Date
FR918194A Expired FR1359131A (fr) 1961-12-11 1962-12-11 Procédé pour la croissance épitaxiale de matières semi-conductrices

Country Status (1)

Country Link
FR (1) FR1359131A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114365290A (zh) * 2019-09-10 2022-04-15 微软技术许可有限责任公司 制造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114365290A (zh) * 2019-09-10 2022-04-15 微软技术许可有限责任公司 制造方法

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