FR1376154A - Procédé pour tirer des cristaux semi-conducteurs - Google Patents

Procédé pour tirer des cristaux semi-conducteurs

Info

Publication number
FR1376154A
FR1376154A FR955543A FR955543A FR1376154A FR 1376154 A FR1376154 A FR 1376154A FR 955543 A FR955543 A FR 955543A FR 955543 A FR955543 A FR 955543A FR 1376154 A FR1376154 A FR 1376154A
Authority
FR
France
Prior art keywords
shoot
semiconductor crystals
crystals
semiconductor
shoot semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR955543A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens Corp
Original Assignee
Siemens and Halske AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DES82693A external-priority patent/DE1244113B/de
Application filed by Siemens and Halske AG, Siemens Corp filed Critical Siemens and Halske AG
Priority to FR955543A priority Critical patent/FR1376154A/fr
Application granted granted Critical
Publication of FR1376154A publication Critical patent/FR1376154A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C30B15/18—Heating of the melt or the crystallised materials using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
FR955543A 1962-12-03 1963-11-29 Procédé pour tirer des cristaux semi-conducteurs Expired FR1376154A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR955543A FR1376154A (fr) 1962-12-03 1963-11-29 Procédé pour tirer des cristaux semi-conducteurs

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES82693A DE1244113B (de) 1962-12-03 1962-12-03 Verfahren zur Verringerung der Gitterstoerungen in aus Halbleitermaterial bestehenden Kristallen
FR955543A FR1376154A (fr) 1962-12-03 1963-11-29 Procédé pour tirer des cristaux semi-conducteurs

Publications (1)

Publication Number Publication Date
FR1376154A true FR1376154A (fr) 1964-10-23

Family

ID=25997070

Family Applications (1)

Application Number Title Priority Date Filing Date
FR955543A Expired FR1376154A (fr) 1962-12-03 1963-11-29 Procédé pour tirer des cristaux semi-conducteurs

Country Status (1)

Country Link
FR (1) FR1376154A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1262978B (de) * 1965-01-05 1968-03-14 Siemens Ag Verfahren zum Herstellen eines Halbleitereinkristalls

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1262978B (de) * 1965-01-05 1968-03-14 Siemens Ag Verfahren zum Herstellen eines Halbleitereinkristalls

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