FR1377412A - Transistor épitaxique inverse - Google Patents
Transistor épitaxique inverseInfo
- Publication number
- FR1377412A FR1377412A FR947498A FR947498A FR1377412A FR 1377412 A FR1377412 A FR 1377412A FR 947498 A FR947498 A FR 947498A FR 947498 A FR947498 A FR 947498A FR 1377412 A FR1377412 A FR 1377412A
- Authority
- FR
- France
- Prior art keywords
- epitaxial transistor
- reverse epitaxial
- reverse
- transistor
- epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
- H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/30—Isolation regions comprising PN junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W15/00—Highly-doped buried regions of integrated devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W15/00—Highly-doped buried regions of integrated devices
- H10W15/01—Manufacture or treatment
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR947498A FR1377412A (fr) | 1962-10-08 | 1963-09-13 | Transistor épitaxique inverse |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US228807A US3244950A (en) | 1962-10-08 | 1962-10-08 | Reverse epitaxial transistor |
| FR947498A FR1377412A (fr) | 1962-10-08 | 1963-09-13 | Transistor épitaxique inverse |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR1377412A true FR1377412A (fr) | 1964-11-06 |
Family
ID=26203369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR947498A Expired FR1377412A (fr) | 1962-10-08 | 1963-09-13 | Transistor épitaxique inverse |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR1377412A (fr) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1297763B (de) * | 1964-07-18 | 1969-06-19 | Fujitsu Ltd | Verfahren zum Herstellen eines Transistors fuer sehr hohe Frequenzen |
| FR2048030A1 (fr) * | 1969-06-30 | 1971-03-19 | Ibm | |
| FR2130399A1 (fr) * | 1971-03-20 | 1972-11-03 | Philips Nv |
-
1963
- 1963-09-13 FR FR947498A patent/FR1377412A/fr not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1297763B (de) * | 1964-07-18 | 1969-06-19 | Fujitsu Ltd | Verfahren zum Herstellen eines Transistors fuer sehr hohe Frequenzen |
| FR2048030A1 (fr) * | 1969-06-30 | 1971-03-19 | Ibm | |
| FR2051769A1 (fr) * | 1969-06-30 | 1971-04-09 | Ibm | |
| FR2130399A1 (fr) * | 1971-03-20 | 1972-11-03 | Philips Nv |
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