FR1377412A - Transistor épitaxique inverse - Google Patents

Transistor épitaxique inverse

Info

Publication number
FR1377412A
FR1377412A FR947498A FR947498A FR1377412A FR 1377412 A FR1377412 A FR 1377412A FR 947498 A FR947498 A FR 947498A FR 947498 A FR947498 A FR 947498A FR 1377412 A FR1377412 A FR 1377412A
Authority
FR
France
Prior art keywords
epitaxial transistor
reverse epitaxial
reverse
transistor
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR947498A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US228807A external-priority patent/US3244950A/en
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Priority to FR947498A priority Critical patent/FR1377412A/fr
Application granted granted Critical
Publication of FR1377412A publication Critical patent/FR1377412A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H10W15/01—Manufacture or treatment
FR947498A 1962-10-08 1963-09-13 Transistor épitaxique inverse Expired FR1377412A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR947498A FR1377412A (fr) 1962-10-08 1963-09-13 Transistor épitaxique inverse

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US228807A US3244950A (en) 1962-10-08 1962-10-08 Reverse epitaxial transistor
FR947498A FR1377412A (fr) 1962-10-08 1963-09-13 Transistor épitaxique inverse

Publications (1)

Publication Number Publication Date
FR1377412A true FR1377412A (fr) 1964-11-06

Family

ID=26203369

Family Applications (1)

Application Number Title Priority Date Filing Date
FR947498A Expired FR1377412A (fr) 1962-10-08 1963-09-13 Transistor épitaxique inverse

Country Status (1)

Country Link
FR (1) FR1377412A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1297763B (de) * 1964-07-18 1969-06-19 Fujitsu Ltd Verfahren zum Herstellen eines Transistors fuer sehr hohe Frequenzen
FR2048030A1 (fr) * 1969-06-30 1971-03-19 Ibm
FR2130399A1 (fr) * 1971-03-20 1972-11-03 Philips Nv

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1297763B (de) * 1964-07-18 1969-06-19 Fujitsu Ltd Verfahren zum Herstellen eines Transistors fuer sehr hohe Frequenzen
FR2048030A1 (fr) * 1969-06-30 1971-03-19 Ibm
FR2051769A1 (fr) * 1969-06-30 1971-04-09 Ibm
FR2130399A1 (fr) * 1971-03-20 1972-11-03 Philips Nv

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