FR1449089A - Dispositifs semi-conducteurs - Google Patents
Dispositifs semi-conducteursInfo
- Publication number
- FR1449089A FR1449089A FR23769A FR23769A FR1449089A FR 1449089 A FR1449089 A FR 1449089A FR 23769 A FR23769 A FR 23769A FR 23769 A FR23769 A FR 23769A FR 1449089 A FR1449089 A FR 1449089A
- Authority
- FR
- France
- Prior art keywords
- semiconductor devices
- semiconductor
- devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H10P14/6923—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6328—Deposition from the gas or vapour phase
- H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
- H10P14/6506—Formation of intermediate materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
- H10P14/6548—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by forming intermediate materials, e.g. capping layers or diffusion barriers
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR23769A FR1449089A (fr) | 1964-07-09 | 1965-07-07 | Dispositifs semi-conducteurs |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US381501A US3334281A (en) | 1964-07-09 | 1964-07-09 | Stabilizing coatings for semiconductor devices |
| FR23769A FR1449089A (fr) | 1964-07-09 | 1965-07-07 | Dispositifs semi-conducteurs |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR1449089A true FR1449089A (fr) | 1966-08-12 |
Family
ID=26164608
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR23769A Expired FR1449089A (fr) | 1964-07-09 | 1965-07-07 | Dispositifs semi-conducteurs |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR1449089A (fr) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2011823A1 (fr) * | 1968-05-07 | 1970-03-13 | Hitachi Ltd | |
| FR2015696A1 (fr) * | 1968-08-15 | 1970-04-30 | Ibm | |
| FR2015567A1 (fr) * | 1968-08-13 | 1970-04-30 | Siemens Ag | |
| DE2424908A1 (de) * | 1973-06-01 | 1974-12-19 | Raytheon Co | Halbleitergeraet, insbesondere aufnahmeelektrode fuer bildwandlerroehren bzw. verfahren zur herstellung desselben |
-
1965
- 1965-07-07 FR FR23769A patent/FR1449089A/fr not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2011823A1 (fr) * | 1968-05-07 | 1970-03-13 | Hitachi Ltd | |
| FR2015567A1 (fr) * | 1968-08-13 | 1970-04-30 | Siemens Ag | |
| FR2015696A1 (fr) * | 1968-08-15 | 1970-04-30 | Ibm | |
| DE2424908A1 (de) * | 1973-06-01 | 1974-12-19 | Raytheon Co | Halbleitergeraet, insbesondere aufnahmeelektrode fuer bildwandlerroehren bzw. verfahren zur herstellung desselben |
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