FR1456952A - Dispositif semiconducteur et son procédé de fabrication - Google Patents
Dispositif semiconducteur et son procédé de fabricationInfo
- Publication number
- FR1456952A FR1456952A FR32346A FR32346A FR1456952A FR 1456952 A FR1456952 A FR 1456952A FR 32346 A FR32346 A FR 32346A FR 32346 A FR32346 A FR 32346A FR 1456952 A FR1456952 A FR 1456952A
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- manufacturing process
- manufacturing
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/137—Collector regions of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
- H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
- H10W10/019—Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W15/00—Highly-doped buried regions of integrated devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W15/00—Highly-doped buried regions of integrated devices
- H10W15/01—Manufacture or treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL646411057A NL144775B (nl) | 1964-09-23 | 1964-09-23 | Halfgeleiderinrichting met meer dan een halfgeleiderschakelelement in een lichaam. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR1456952A true FR1456952A (fr) | 1966-07-08 |
Family
ID=19791081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR32346A Expired FR1456952A (fr) | 1964-09-23 | 1965-09-23 | Dispositif semiconducteur et son procédé de fabrication |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3614558A (fr) |
| AT (1) | AT263081B (fr) |
| BE (1) | BE670038A (fr) |
| CH (1) | CH436508A (fr) |
| FR (1) | FR1456952A (fr) |
| GB (1) | GB1124801A (fr) |
| NL (1) | NL144775B (fr) |
| SE (1) | SE314441B (fr) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3800195A (en) * | 1972-08-09 | 1974-03-26 | Motorola Inc | Method of making semiconductor devices through overlapping diffusions |
| US3865649A (en) * | 1972-10-16 | 1975-02-11 | Harris Intertype Corp | Fabrication of MOS devices and complementary bipolar transistor devices in a monolithic substrate |
| US4261003A (en) * | 1979-03-09 | 1981-04-07 | International Business Machines Corporation | Integrated circuit structures with full dielectric isolation and a novel method for fabrication thereof |
| US4446476A (en) * | 1981-06-30 | 1984-05-01 | International Business Machines Corporation | Integrated circuit having a sublayer electrical contact and fabrication thereof |
| US4649630A (en) * | 1985-04-01 | 1987-03-17 | Motorola, Inc. | Process for dielectrically isolated semiconductor structure |
| JPH0638424B2 (ja) * | 1986-07-31 | 1994-05-18 | 株式会社日立製作所 | 半導体装置の製造方法 |
| US4794093A (en) * | 1987-05-01 | 1988-12-27 | Raytheon Company | Selective backside plating of gaas monolithic microwave integrated circuits |
| US4839309A (en) * | 1988-03-30 | 1989-06-13 | American Telephone And Telegraph Company, At&T Technologies, Inc. | Fabrication of high-speed dielectrically isolated devices utilizing buried silicide outdiffusion |
| US5459346A (en) * | 1988-06-28 | 1995-10-17 | Ricoh Co., Ltd. | Semiconductor substrate with electrical contact in groove |
| DE102004050740A1 (de) * | 2004-10-19 | 2006-04-20 | Atmel Germany Gmbh | Halbleitergegenstand und Verfahren zur Herstellung |
| CN103137547A (zh) * | 2011-11-28 | 2013-06-05 | 中国科学院上海微系统与信息技术研究所 | 一种绝缘体上Si/NiSi2衬底材料及其制备方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL264215A (fr) * | 1960-05-02 | |||
| GB948238A (en) * | 1961-09-25 | 1964-01-29 | Raytheon Co | Improvements in or relating to switching circuits |
| BE632105A (fr) * | 1962-05-09 | |||
| US3323071A (en) * | 1964-07-09 | 1967-05-30 | Nat Semiconductor Corp | Semiconductor circuit arrangement utilizing integrated chopper element as zener-diode-coupled transistor |
| US3381182A (en) * | 1964-10-19 | 1968-04-30 | Philco Ford Corp | Microcircuits having buried conductive layers |
| US3368113A (en) * | 1965-06-28 | 1968-02-06 | Westinghouse Electric Corp | Integrated circuit structures, and method of making same, including a dielectric medium for internal isolation |
-
1964
- 1964-09-23 NL NL646411057A patent/NL144775B/xx unknown
-
1965
- 1965-09-16 US US487748A patent/US3614558A/en not_active Expired - Lifetime
- 1965-09-20 GB GB39928/65A patent/GB1124801A/en not_active Expired
- 1965-09-20 AT AT855365A patent/AT263081B/de active
- 1965-09-20 SE SE12225/65A patent/SE314441B/xx unknown
- 1965-09-20 CH CH1295365A patent/CH436508A/de unknown
- 1965-09-23 FR FR32346A patent/FR1456952A/fr not_active Expired
- 1965-09-23 BE BE670038A patent/BE670038A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US3614558A (en) | 1971-10-19 |
| GB1124801A (en) | 1968-08-21 |
| NL6411057A (fr) | 1966-03-24 |
| CH436508A (de) | 1967-05-31 |
| BE670038A (fr) | 1966-03-23 |
| NL144775B (nl) | 1975-01-15 |
| AT263081B (de) | 1968-07-10 |
| SE314441B (fr) | 1969-09-08 |
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