FR1462496A - Substrat revêtu de pellicules minces à couches multiples avec une couche protectrice de partage pour permettre une attaque sélective échelonnée - Google Patents

Substrat revêtu de pellicules minces à couches multiples avec une couche protectrice de partage pour permettre une attaque sélective échelonnée

Info

Publication number
FR1462496A
FR1462496A FR37717A FR37717A FR1462496A FR 1462496 A FR1462496 A FR 1462496A FR 37717 A FR37717 A FR 37717A FR 37717 A FR37717 A FR 37717A FR 1462496 A FR1462496 A FR 1462496A
Authority
FR
France
Prior art keywords
thin film
coated substrate
film coated
partition layer
allow selective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR37717A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of FR1462496A publication Critical patent/FR1462496A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/02Local etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C13/00Resistors not provided for elsewhere
    • H01C13/02Structural combinations of resistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/40Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00Electric solid-state thin-film or thick-film devices, not otherwise provided for
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00Stock material or miscellaneous articles
    • Y10S428/901Printed circuit
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49126Assembling bases
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495Thickness [relative or absolute]
    • Y10T428/24967Absolute thicknesses specified
    • Y10T428/24975No layer or component greater than 5 mils thick

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
FR37717A 1964-11-09 1965-11-08 Substrat revêtu de pellicules minces à couches multiples avec une couche protectrice de partage pour permettre une attaque sélective échelonnée Expired FR1462496A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US409656A US3406043A (en) 1964-11-09 1964-11-09 Integrated circuit containing multilayer tantalum compounds

Publications (1)

Publication Number Publication Date
FR1462496A true FR1462496A (fr) 1966-04-15

Family

ID=23621435

Family Applications (1)

Application Number Title Priority Date Filing Date
FR37717A Expired FR1462496A (fr) 1964-11-09 1965-11-08 Substrat revêtu de pellicules minces à couches multiples avec une couche protectrice de partage pour permettre une attaque sélective échelonnée

Country Status (10)

Country Link
US (1) US3406043A (fr)
BE (1) BE671926A (fr)
CH (1) CH453505A (fr)
DE (1) DE1615010B1 (fr)
ES (1) ES318876A1 (fr)
FR (1) FR1462496A (fr)
GB (1) GB1125394A (fr)
IL (1) IL24471A (fr)
NL (1) NL141750B (fr)
SE (1) SE326746B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1790013B1 (de) * 1968-08-27 1971-11-25 Siemens Ag Elektrische duennschichtschaltung

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3489656A (en) * 1964-11-09 1970-01-13 Western Electric Co Method of producing an integrated circuit containing multilayer tantalum compounds
US3487522A (en) * 1966-02-01 1970-01-06 Western Electric Co Multilayered thin-film intermediates employing parting layers to permit selective,sequential etching
US3479237A (en) * 1966-04-08 1969-11-18 Bell Telephone Labor Inc Etch masks on semiconductor surfaces
US3491433A (en) * 1966-06-08 1970-01-27 Nippon Electric Co Method of making an insulated gate semiconductor device
US3544287A (en) * 1967-04-13 1970-12-01 Western Electric Co Heat treatment of multilayered thin film structures employing oxide parting layers
US3617373A (en) * 1968-05-24 1971-11-02 Western Electric Co Methods of making thin film patterns
US3772102A (en) * 1969-10-27 1973-11-13 Gen Electric Method of transferring a desired pattern in silicon to a substrate layer
US3844831A (en) * 1972-10-27 1974-10-29 Ibm Forming a compact multilevel interconnection metallurgy system for semi-conductor devices
GB1424980A (en) * 1973-06-20 1976-02-11 Siemens Ag Thin-film electrical circuits
US3907620A (en) * 1973-06-27 1975-09-23 Hewlett Packard Co A process of forming metallization structures on semiconductor devices
US3874922A (en) * 1973-08-16 1975-04-01 Boeing Co Tantalum thin film resistors by reactive evaporation
US3916071A (en) * 1973-11-05 1975-10-28 Texas Instruments Inc Ceramic substrate for receiving resistive film and method of forming chromium/chromium oxide ceramic substrate
US4098917A (en) * 1976-09-08 1978-07-04 Texas Instruments Incorporated Method of providing a patterned metal layer on a substrate employing metal mask and ion milling
US4189516A (en) * 1978-07-17 1980-02-19 National Research Development Corporation Epitaxial crystalline aluminium nitride
DE2851584B2 (de) * 1978-11-29 1980-09-04 Fried. Krupp Gmbh, 4300 Essen Verbundkörper
US4226932A (en) * 1979-07-05 1980-10-07 Gte Automatic Electric Laboratories Incorporated Titanium nitride as one layer of a multi-layered coating intended to be etched
JPS5831336A (ja) * 1981-08-19 1983-02-24 Konishiroku Photo Ind Co Ltd ホトマスク素材
JP2619838B2 (ja) * 1989-09-08 1997-06-11 新日本製鐵株式会社 セラミックスコーティング金属板
WO1992007968A1 (fr) * 1990-10-26 1992-05-14 International Business Machines Corporation STRUCTURE ET PROCEDE PERMETTANT DE FORMER DES FILMS ALPHA-Ta EN COUCHES MINCES
US5221449A (en) * 1990-10-26 1993-06-22 International Business Machines Corporation Method of making Alpha-Ta thin films
US7676905B2 (en) * 2005-08-15 2010-03-16 Hitachi Global Storage Technologies Netherlands B.V. Method of manufacturing a self aligned magnetoresistive sensor
TW201134337A (en) * 2010-03-25 2011-10-01 Kinik Co Method for manufacturing substrate and the structure thereof
JP6092674B2 (ja) 2013-03-22 2017-03-08 シャープ株式会社 構造体、無線通信装置および構造体の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
LU38614A1 (fr) * 1959-05-06
FR1300771A (fr) * 1961-05-09 1962-08-10 Haloid Xerox Panneau de circuit imprimé à deux dimensions
US3256588A (en) * 1962-10-23 1966-06-21 Philco Corp Method of fabricating thin film r-c circuits on single substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1790013B1 (de) * 1968-08-27 1971-11-25 Siemens Ag Elektrische duennschichtschaltung

Also Published As

Publication number Publication date
ES318876A1 (es) 1966-05-01
BE671926A (fr) 1966-03-01
NL141750B (nl) 1974-03-15
SE326746B (fr) 1970-08-03
US3406043A (en) 1968-10-15
NL6514243A (fr) 1966-05-10
GB1125394A (en) 1968-08-28
IL24471A (en) 1969-03-27
CH453505A (de) 1968-06-14
DE1615010B1 (de) 1971-02-11

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