FR1478897A - Laser à semi-conducteur - Google Patents

Laser à semi-conducteur

Info

Publication number
FR1478897A
FR1478897A FR7789A FR06007789A FR1478897A FR 1478897 A FR1478897 A FR 1478897A FR 7789 A FR7789 A FR 7789A FR 06007789 A FR06007789 A FR 06007789A FR 1478897 A FR1478897 A FR 1478897A
Authority
FR
France
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7789A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of FR1478897A publication Critical patent/FR1478897A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
FR7789A 1965-08-02 1966-04-28 Laser à semi-conducteur Expired FR1478897A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US47627165A 1965-08-02 1965-08-02

Publications (1)

Publication Number Publication Date
FR1478897A true FR1478897A (fr) 1967-04-28

Family

ID=23891190

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7789A Expired FR1478897A (fr) 1965-08-02 1966-04-28 Laser à semi-conducteur

Country Status (4)

Country Link
US (1) US3493891A (fr)
DE (1) DE1564142A1 (fr)
FR (1) FR1478897A (fr)
GB (1) GB1069780A (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3824400A (en) * 1969-09-25 1974-07-16 K Lehovec Induced charge transfer devices
US4894832A (en) * 1988-09-15 1990-01-16 North American Philips Corporation Wide band gap semiconductor light emitting devices
US5164953A (en) * 1989-07-31 1992-11-17 Ltv Aerospace And Defense Company Population inversion by excited energy level absorption
US5274658A (en) * 1989-07-31 1993-12-28 Loral Vought Systems Corporation Population inversion by excited energy level absorption

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3258718A (en) * 1963-02-07 1966-06-28 Massachussetts Institute Of Technology Semiconductor infrared maser
US3309553A (en) * 1963-08-16 1967-03-14 Varian Associates Solid state radiation emitters
US3412344A (en) * 1963-10-30 1968-11-19 Rca Corp Semiconductor plasma laser

Also Published As

Publication number Publication date
US3493891A (en) 1970-02-03
DE1564142A1 (de) 1970-01-08
GB1069780A (en) 1967-05-24

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