FR1502247A - Perfectionnements aux dispositifs à semiconducteurs - Google Patents

Perfectionnements aux dispositifs à semiconducteurs

Info

Publication number
FR1502247A
FR1502247A FR84758A FR84758A FR1502247A FR 1502247 A FR1502247 A FR 1502247A FR 84758 A FR84758 A FR 84758A FR 84758 A FR84758 A FR 84758A FR 1502247 A FR1502247 A FR 1502247A
Authority
FR
France
Prior art keywords
semiconductor device
device enhancements
enhancements
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR84758A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Application granted granted Critical
Publication of FR1502247A publication Critical patent/FR1502247A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/199—Anode base regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/676—Combinations of only thyristors
FR84758A 1965-11-26 1966-11-24 Perfectionnements aux dispositifs à semiconducteurs Expired FR1502247A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US50970065A 1965-11-26 1965-11-26

Publications (1)

Publication Number Publication Date
FR1502247A true FR1502247A (fr) 1967-11-18

Family

ID=24027749

Family Applications (1)

Application Number Title Priority Date Filing Date
FR84758A Expired FR1502247A (fr) 1965-11-26 1966-11-24 Perfectionnements aux dispositifs à semiconducteurs

Country Status (4)

Country Link
US (1) US3427512A (fr)
DE (2) DE1564048C3 (fr)
FR (1) FR1502247A (fr)
GB (1) GB1162833A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0024320A3 (en) * 1979-08-16 1984-04-04 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor thermally sensitive switch

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3604979A (en) * 1967-07-22 1971-09-14 Tokai Rika Co Ltd Sequential flasher
US3544962A (en) * 1967-08-31 1970-12-01 Motorola Inc Sequential light flasher
BE758745A (fr) * 1969-11-10 1971-05-10 Westinghouse Electric Corp Perfectionnements aux ou en rapport avec les dispositifs semiconducteurs
US4011579A (en) * 1975-04-07 1977-03-08 Hutson Jearld L Semiconductor gate turn-off device
JPS5248986A (en) * 1975-10-17 1977-04-19 Mitsubishi Electric Corp Semiconductor temperature sensitive switch element
GB1575906A (en) * 1976-05-21 1980-10-01 Rca Corp Multivibrator circuit
SE423946B (sv) 1980-10-08 1982-06-14 Asea Ab Tyristor anordnad for sjelvtendning
US4458408A (en) * 1981-07-31 1984-07-10 Motorola, Inc. Method for making a light-activated line-operable zero-crossing switch
US5083185A (en) * 1985-02-15 1992-01-21 Agency Of Industrial Science & Technology, Ministry Of International Trade & Industry Surge absorption device
US7327541B1 (en) 1998-06-19 2008-02-05 National Semiconductor Corporation Operation of dual-directional electrostatic discharge protection device
US6365924B1 (en) * 1998-06-19 2002-04-02 National Semiconductor Corporation Dual direction over-voltage and over-current IC protection device and its cell structure
JP4176564B2 (ja) * 2003-06-23 2008-11-05 株式会社東芝 ウェハ移載装置及びこれを用いた半導体装置の製造方法
RU201517U1 (ru) * 2020-07-28 2020-12-21 федеральное государственное бюджетное образовательное учреждение высшего образования "Алтайский государственный технический университет им. И.И. Ползунова" (АлтГТУ) Регулируемый динистор

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure
US3199002A (en) * 1961-04-17 1965-08-03 Fairchild Camera Instr Co Solid-state circuit with crossing leads and method for making the same
US3256587A (en) * 1962-03-23 1966-06-21 Solid State Products Inc Method of making vertically and horizontally integrated microcircuitry
US3275846A (en) * 1963-02-25 1966-09-27 Motorola Inc Integrated circuit bistable multivibrator
US3236698A (en) * 1964-04-08 1966-02-22 Clevite Corp Semiconductive device and method of making the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0024320A3 (en) * 1979-08-16 1984-04-04 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor thermally sensitive switch

Also Published As

Publication number Publication date
DE1564048A1 (de) 1970-09-10
DE1564048B2 (de) 1973-10-11
US3427512A (en) 1969-02-11
DE1959620U (de) 1967-05-03
DE1564048C3 (de) 1974-05-02
GB1162833A (en) 1969-08-27

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