FR1509713A - Procédé de fabrication de composés et alliages à haute résistivité - Google Patents

Procédé de fabrication de composés et alliages à haute résistivité

Info

Publication number
FR1509713A
FR1509713A FR93148A FR93148A FR1509713A FR 1509713 A FR1509713 A FR 1509713A FR 93148 A FR93148 A FR 93148A FR 93148 A FR93148 A FR 93148A FR 1509713 A FR1509713 A FR 1509713A
Authority
FR
France
Prior art keywords
alloys
manufacturing process
high resistivity
compounds
resistivity compounds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR93148A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of FR1509713A publication Critical patent/FR1509713A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3418—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3446—Transition metal elements; Rare earth elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/918—Special or nonstandard dopant
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/934—Sheet resistance, i.e. dopant parameters
FR93148A 1966-02-02 1967-01-31 Procédé de fabrication de composés et alliages à haute résistivité Expired FR1509713A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US52453866A 1966-02-02 1966-02-02

Publications (1)

Publication Number Publication Date
FR1509713A true FR1509713A (fr) 1968-01-12

Family

ID=24089646

Family Applications (1)

Application Number Title Priority Date Filing Date
FR93148A Expired FR1509713A (fr) 1966-02-02 1967-01-31 Procédé de fabrication de composés et alliages à haute résistivité

Country Status (5)

Country Link
US (1) US3421952A (fr)
FR (1) FR1509713A (fr)
GB (1) GB1176691A (fr)
NL (1) NL6701280A (fr)
SE (1) SE311012B (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3541678A (en) * 1967-08-01 1970-11-24 United Aircraft Corp Method of making a gallium arsenide integrated circuit
US3494743A (en) * 1967-11-01 1970-02-10 Atomic Energy Commission Vapor phase reactor for producing multicomponent compounds
JPS4831021B1 (fr) * 1968-09-14 1973-09-26
DE2100692A1 (de) * 1970-01-09 1971-07-15 Hitachi Ltd Verfahren zum Herstellen einer epitaxisch gewachsenen Schicht eines GaAs tief 1 χ P tief χ Halbleitermaterial
BE752487A (fr) * 1970-06-24 1970-12-01 Cockerill Procede de fabrication d'un fil de soudure et fil obtenu,
US3836408A (en) * 1970-12-21 1974-09-17 Hitachi Ltd Production of epitaxial films of semiconductor compound material
US3855613A (en) * 1973-06-22 1974-12-17 Rca Corp A solid state switch using an improved junction field effect transistor
FR2320774A1 (fr) * 1974-01-10 1977-03-11 Radiotechnique Compelec Procede et dispositif de depot de materiau dope
US4062706A (en) * 1976-04-12 1977-12-13 Robert Arthur Ruehrwein Process for III-V compound epitaxial crystals utilizing inert carrier gas
JPS5347765A (en) * 1976-10-13 1978-04-28 Matsushita Electric Ind Co Ltd Semiconductor crystal growth method
FR2419585A1 (fr) * 1978-03-07 1979-10-05 Thomson Csf Procede d'obtention en phase gazeuse d'une couche epitaxiale de phosphure d'indium, et appareil d'application de ce procede
US4578126A (en) * 1983-06-22 1986-03-25 Trw Inc. Liquid phase epitaxial growth process
CA1210526A (fr) * 1983-10-21 1986-08-26 Judith A. Long Systemes renfermant des compositions semi-isolantes a base de phosphures d'indium
JPH0630339B2 (ja) * 1984-07-16 1994-04-20 新技術事業団 ＧａＡｓ単結晶の製造方法
GB2248456A (en) * 1990-09-12 1992-04-08 Philips Electronic Associated A method of growing III-V compound semiconductor material on a substrate
CN107268085A (zh) * 2017-08-01 2017-10-20 江西德义半导体科技有限公司 一种半绝缘砷化镓多晶掺碳的制备方法及装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2778802A (en) * 1954-04-26 1957-01-22 Battelle Development Corp Intermetallic compounds of groups iii and v metals containing small amounts of nickel, cobalt or iron
US3312570A (en) * 1961-05-29 1967-04-04 Monsanto Co Production of epitaxial films of semiconductor compound material
BE620887A (fr) * 1959-06-18
US3277006A (en) * 1962-06-28 1966-10-04 Texas Instruments Inc Double doping of iii-v compound semiconductor material
US3218205A (en) * 1962-07-13 1965-11-16 Monsanto Co Use of hydrogen halide and hydrogen in separate streams as carrier gases in vapor deposition of iii-v compounds
NL295293A (fr) * 1962-07-13
NL295918A (fr) * 1962-07-31
US3310425A (en) * 1963-06-28 1967-03-21 Rca Corp Method of depositing epitaxial layers of gallium arsenide
US3344071A (en) * 1963-09-25 1967-09-26 Texas Instruments Inc High resistivity chromium doped gallium arsenide and process of making same

Also Published As

Publication number Publication date
NL6701280A (fr) 1967-08-03
SE311012B (fr) 1969-05-27
GB1176691A (en) 1970-01-07
US3421952A (en) 1969-01-14

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