FR1521035A - Cellule d'emmagasinage à transistor uni-jonction - Google Patents

Cellule d'emmagasinage à transistor uni-jonction

Info

Publication number
FR1521035A
FR1521035A FR8469A FR06008469A FR1521035A FR 1521035 A FR1521035 A FR 1521035A FR 8469 A FR8469 A FR 8469A FR 06008469 A FR06008469 A FR 06008469A FR 1521035 A FR1521035 A FR 1521035A
Authority
FR
France
Prior art keywords
uni
storage cell
junction transistor
transistor storage
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8469A
Other languages
English (en)
Inventor
John Brian Gillet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of FR1521035A publication Critical patent/FR1521035A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/35Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H03K3/351Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region the devices being unijunction transistors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
FR8469A 1966-06-03 1967-04-25 Cellule d'emmagasinage à transistor uni-jonction Expired FR1521035A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB24732/66A GB1076919A (en) 1966-06-03 1966-06-03 Improvements in digital data stores

Publications (1)

Publication Number Publication Date
FR1521035A true FR1521035A (fr) 1968-04-12

Family

ID=10216380

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8469A Expired FR1521035A (fr) 1966-06-03 1967-04-25 Cellule d'emmagasinage à transistor uni-jonction

Country Status (4)

Country Link
DE (1) DE1524792C3 (fr)
FR (1) FR1521035A (fr)
GB (1) GB1076919A (fr)
NL (1) NL6707403A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2401521A1 (fr) * 1977-08-26 1979-03-23 Gen Electric Procede de modification de caracteristiques electriques de transistors unijonctions

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6804787A (fr) * 1968-04-04 1969-10-07
JPS4933432B1 (fr) * 1968-12-20 1974-09-06

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2401521A1 (fr) * 1977-08-26 1979-03-23 Gen Electric Procede de modification de caracteristiques electriques de transistors unijonctions

Also Published As

Publication number Publication date
DE1524792C3 (de) 1973-09-13
NL6707403A (fr) 1967-12-04
DE1524792A1 (de) 1972-04-20
GB1076919A (en) 1967-07-26
DE1524792B2 (de) 1973-02-22

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