FR1523032A - Transistor latéral perfectionné et son procédé de fabrication - Google Patents
Transistor latéral perfectionné et son procédé de fabricationInfo
- Publication number
- FR1523032A FR1523032A FR106718A FR106718A FR1523032A FR 1523032 A FR1523032 A FR 1523032A FR 106718 A FR106718 A FR 106718A FR 106718 A FR106718 A FR 106718A FR 1523032 A FR1523032 A FR 1523032A
- Authority
- FR
- France
- Prior art keywords
- manufacturing process
- side transistor
- advanced side
- advanced
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/60—Lateral BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/062—Gold diffusion
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US55069666A | 1966-05-17 | 1966-05-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR1523032A true FR1523032A (fr) | 1968-04-02 |
Family
ID=24198238
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR106718A Expired FR1523032A (fr) | 1966-05-17 | 1967-05-17 | Transistor latéral perfectionné et son procédé de fabrication |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US3443173A (fr) |
| FR (1) | FR1523032A (fr) |
| GB (1) | GB1177540A (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH658916A5 (de) * | 1982-09-13 | 1986-12-15 | Landis & Gyr Ag | Magnetfeldsensor. |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1188879A (en) * | 1967-12-13 | 1970-04-22 | Matsushita Electronics Corp | Planar Transistor |
| JPS5478092A (en) * | 1977-12-05 | 1979-06-21 | Hitachi Ltd | Lateral semiconductor device |
| IT1111981B (it) * | 1979-02-13 | 1986-01-13 | Ates Componenti Elettron | Struttura di transistore v(br)ceo protetto per il caso di inversione delle polarita' di alimentazione e prodotto risultante |
| FR2625611B1 (fr) * | 1987-12-30 | 1990-05-04 | Radiotechnique Compelec | Circuit integre presentant un transistor lateral |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE527382A (fr) * | 1953-05-01 | |||
| CA653719A (en) * | 1957-09-09 | 1962-12-11 | Imperial Chemical Industries Limited | Probe device for flaw detection |
| US3225272A (en) * | 1961-01-23 | 1965-12-21 | Bendix Corp | Semiconductor triode |
| US3246214A (en) * | 1963-04-22 | 1966-04-12 | Siliconix Inc | Horizontally aligned junction transistor structure |
-
1966
- 1966-05-17 US US550696A patent/US3443173A/en not_active Expired - Lifetime
-
1967
- 1967-05-16 GB GB22662/67A patent/GB1177540A/en not_active Expired
- 1967-05-17 FR FR106718A patent/FR1523032A/fr not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH658916A5 (de) * | 1982-09-13 | 1986-12-15 | Landis & Gyr Ag | Magnetfeldsensor. |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1177540A (en) | 1970-01-14 |
| US3443173A (en) | 1969-05-06 |
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