FR1541731A - Procédé d'élaboration d'une couche mixte de protection - Google Patents
Procédé d'élaboration d'une couche mixte de protectionInfo
- Publication number
- FR1541731A FR1541731A FR117835A FR117835A FR1541731A FR 1541731 A FR1541731 A FR 1541731A FR 117835 A FR117835 A FR 117835A FR 117835 A FR117835 A FR 117835A FR 1541731 A FR1541731 A FR 1541731A
- Authority
- FR
- France
- Prior art keywords
- producing
- protective layer
- mixed protective
- mixed
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6328—Deposition from the gas or vapour phase
- H10P14/6329—Deposition from the gas or vapour phase using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
- H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6324—Formation by anodic treatments, e.g. anodic oxidation
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR117835A FR1541731A (fr) | 1967-08-11 | 1967-08-11 | Procédé d'élaboration d'une couche mixte de protection |
| BE718764A BE718764A (fr) | 1967-08-11 | 1968-07-30 | |
| NL6811334A NL6811334A (fr) | 1967-08-11 | 1968-08-09 | |
| DE19681765965 DE1765965A1 (de) | 1967-08-11 | 1968-08-09 | Verfahren zur Herstellung einer gemischten Schutzschicht |
| GB38271/68A GB1210734A (en) | 1967-08-11 | 1968-08-09 | Process for the application of a mixed protective coating to a substrate |
| US751976A US3547786A (en) | 1967-08-11 | 1968-08-12 | Mixed protective coating of semiconductive bodies |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR117835A FR1541731A (fr) | 1967-08-11 | 1967-08-11 | Procédé d'élaboration d'une couche mixte de protection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR1541731A true FR1541731A (fr) | 1968-10-11 |
Family
ID=8636857
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR117835A Expired FR1541731A (fr) | 1967-08-11 | 1967-08-11 | Procédé d'élaboration d'une couche mixte de protection |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3547786A (fr) |
| BE (1) | BE718764A (fr) |
| DE (1) | DE1765965A1 (fr) |
| FR (1) | FR1541731A (fr) |
| GB (1) | GB1210734A (fr) |
| NL (1) | NL6811334A (fr) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5639020B2 (fr) * | 1973-10-05 | 1981-09-10 | ||
| US3882000A (en) * | 1974-05-09 | 1975-05-06 | Bell Telephone Labor Inc | Formation of composite oxides on III-V semiconductors |
| US4051273A (en) * | 1975-11-26 | 1977-09-27 | Ibm Corporation | Field effect transistor structure and method of making same |
| US4140548A (en) * | 1978-05-19 | 1979-02-20 | Maruman Integrated Circuits Inc. | MOS Semiconductor process utilizing a two-layer oxide forming technique |
| US6039857A (en) * | 1998-11-09 | 2000-03-21 | Yeh; Ching-Fa | Method for forming a polyoxide film on doped polysilicon by anodization |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3257592A (en) * | 1966-06-21 | Silicon monoxide | ||
| US3241931A (en) * | 1963-03-01 | 1966-03-22 | Rca Corp | Semiconductor devices |
| US3376481A (en) * | 1966-10-31 | 1968-04-02 | Bell Telephone Labor Inc | Thin film capacitor |
-
1967
- 1967-08-11 FR FR117835A patent/FR1541731A/fr not_active Expired
-
1968
- 1968-07-30 BE BE718764A patent/BE718764A/xx unknown
- 1968-08-09 DE DE19681765965 patent/DE1765965A1/de active Pending
- 1968-08-09 GB GB38271/68A patent/GB1210734A/en not_active Expired
- 1968-08-09 NL NL6811334A patent/NL6811334A/xx unknown
- 1968-08-12 US US751976A patent/US3547786A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US3547786A (en) | 1970-12-15 |
| GB1210734A (en) | 1970-10-28 |
| BE718764A (fr) | 1969-01-30 |
| NL6811334A (fr) | 1969-02-13 |
| DE1765965A1 (de) | 1972-05-10 |
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