FR1543785A - Attaque des revêtements de semi-conducteur - Google Patents

Attaque des revêtements de semi-conducteur

Info

Publication number
FR1543785A
FR1543785A FR068797D FR068797D FR1543785A FR 1543785 A FR1543785 A FR 1543785A FR 068797 D FR068797 D FR 068797D FR 068797 D FR068797 D FR 068797D FR 1543785 A FR1543785 A FR 1543785A
Authority
FR
France
Prior art keywords
attack
semiconductor coatings
coatings
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR068797D
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of FR1543785A publication Critical patent/FR1543785A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/173—Washed emitter
FR068797D 1966-12-28 1967-11-02 Attaque des revêtements de semi-conducteur Expired FR1543785A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US60539066A 1966-12-28 1966-12-28

Publications (1)

Publication Number Publication Date
FR1543785A true FR1543785A (fr) 1968-09-16

Family

ID=24423469

Family Applications (1)

Application Number Title Priority Date Filing Date
FR068797D Expired FR1543785A (fr) 1966-12-28 1967-11-02 Attaque des revêtements de semi-conducteur

Country Status (5)

Country Link
US (1) US3497407A (fr)
JP (1) JPS4813816B1 (fr)
DE (1) DE1621477B2 (fr)
FR (1) FR1543785A (fr)
GB (1) GB1194730A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2045816A1 (fr) * 1969-06-05 1971-03-05 Rca Corp
FR2752331A1 (fr) * 1996-08-09 1998-02-13 United Microelectronics Corp Procede de fabrication de siliciure auto-aligne ameliore
NL1004812C2 (nl) * 1996-12-18 1998-06-19 United Microelectronics Corp Verbeterde werkwijze voor het vervaardigen van autonoom uitgelijnd metaalsilicide.

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3887407A (en) * 1967-02-03 1975-06-03 Hitachi Ltd Method of manufacturing semiconductor device with nitride oxide double layer film
US4060827A (en) * 1967-02-03 1977-11-29 Hitachi, Ltd. Semiconductor device and a method of making the same
US3923562A (en) * 1968-10-07 1975-12-02 Ibm Process for producing monolithic circuits
US3903591A (en) * 1971-09-22 1975-09-09 Siemens Ag Semiconductor arrangement
DE2157633C3 (de) * 1971-11-20 1980-01-24 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zum Herstellen von Zonen einer monolithisch integrierten Festkörperschaltung
GB1432949A (en) * 1972-08-25 1976-04-22 Plessey Co Ltd Silicon dioxide semiconductor product containing boron trioxide and phosphorus pentoxide dopants
US3833919A (en) * 1972-10-12 1974-09-03 Ncr Multilevel conductor structure and method
US4028150A (en) * 1973-05-03 1977-06-07 Ibm Corporation Method for making reliable MOSFET device
US4010042A (en) * 1976-01-15 1977-03-01 Allegheny Ludlum Industries, Inc. Process for removing phosphosilicate coatings
US4040892A (en) * 1976-04-12 1977-08-09 General Electric Company Method of etching materials including a major constituent of tin oxide
US4052253A (en) * 1976-09-27 1977-10-04 Motorola, Inc. Semiconductor-oxide etchant
US4171242A (en) * 1976-12-17 1979-10-16 International Business Machines Corporation Neutral pH silicon etchant for etching silicon in the presence of phosphosilicate glass
US4255229A (en) * 1979-08-14 1981-03-10 Harris Corporation Method of reworking PROMS
US4371423A (en) * 1979-09-04 1983-02-01 Vlsi Technology Research Association Method of manufacturing semiconductor device utilizing a lift-off technique
US4412242A (en) * 1980-11-17 1983-10-25 International Rectifier Corporation Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions
US4372034B1 (en) * 1981-03-26 1998-07-21 Intel Corp Process for forming contact openings through oxide layers
US4922320A (en) * 1985-03-11 1990-05-01 Texas Instruments Incorporated Integrated circuit metallization with reduced electromigration
US6063712A (en) * 1997-11-25 2000-05-16 Micron Technology, Inc. Oxide etch and method of etching
JP3328250B2 (ja) 1998-12-09 2002-09-24 岸本産業株式会社 レジスト残渣除去剤

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3107188A (en) * 1960-11-21 1963-10-15 Pacific Semiconductors Inc Process of etching semiconductors and etchant solutions used therefor
BE636316A (fr) * 1962-08-23 1900-01-01

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2045816A1 (fr) * 1969-06-05 1971-03-05 Rca Corp
FR2752331A1 (fr) * 1996-08-09 1998-02-13 United Microelectronics Corp Procede de fabrication de siliciure auto-aligne ameliore
NL1004812C2 (nl) * 1996-12-18 1998-06-19 United Microelectronics Corp Verbeterde werkwijze voor het vervaardigen van autonoom uitgelijnd metaalsilicide.

Also Published As

Publication number Publication date
US3497407A (en) 1970-02-24
DE1621477A1 (fr) 1971-06-03
GB1194730A (en) 1970-06-10
JPS4813816B1 (fr) 1973-05-01
DE1621477B2 (de) 1971-06-03

Similar Documents

Publication Publication Date Title
DK131482B (da) Skruerotormaskine.
DK139735B (da) Skruerotormaskine.
FI54325B (fi) Anvaendning av ytaktiv komposition foer erhaollande av skumreglering
FI46455B (fi) Foerfarande foer framstaellning av rekonstituerad tobak
CH447968A (de) Sprühdose
DK134412B (da) Skruerotormaskine.
FR1533489A (fr) Trépan
FI51849C (fi) Pintakäsittelyseokset.
NL144718B (nl) Schroef.
CH485791A (fr) Composition filmogène
FR1511512A (fr) Compositions de revêtement
NL149102B (nl) Schroevedraaier.
NL153784B (nl) Sproei-inrichting.
FR1511519A (fr) Copolymères polyoxyalkyléniques
CH471839A (fr) Composition de revêtement
FR1505730A (fr) Tournevis
OA02584A (fr) Revêtement de silicate.
FR1469978A (fr) Structure de revêtement
AT285480B (de) Schwinghammer
FR1521342A (fr) Copolymères carboxy-sulfoniques
NL156367B (nl) Grijper.
AT273552B (de) Pflugschar
FR1396785A (fr) Bateau de surface
FR1531193A (fr) Nouvelles compositions de revêtement
FI49199C (fi) Sulkupäällysteet.