FR1551611A - - Google Patents

Info

Publication number
FR1551611A
FR1551611A FR1551611DA FR1551611A FR 1551611 A FR1551611 A FR 1551611A FR 1551611D A FR1551611D A FR 1551611DA FR 1551611 A FR1551611 A FR 1551611A
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1551611A publication Critical patent/FR1551611A/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133Emitter regions of BJTs
    • H10D62/135Non-interconnected multi-emitter structures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • H10D10/01Manufacture or treatment
    • H10D10/051Manufacture or treatment of vertical BJTs
    • H10D10/056Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs
    • H10D10/058Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs having multi-emitter structures, e.g. interdigitated, multi-cellular or distributed emitters
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
FR1551611D 1967-01-20 1968-01-18 Expired FR1551611A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US61067067A 1967-01-20 1967-01-20

Publications (1)

Publication Number Publication Date
FR1551611A true FR1551611A (fr) 1968-12-27

Family

ID=24445964

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1551611D Expired FR1551611A (fr) 1967-01-20 1968-01-18

Country Status (5)

Country Link
US (1) US3448354A (fr)
JP (1) JPS4921474B1 (fr)
DE (1) DE1639373C2 (fr)
FR (1) FR1551611A (fr)
GB (1) GB1145120A (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3893228A (en) * 1972-10-02 1975-07-08 Motorola Inc Silicon pressure sensor
US4949150A (en) * 1986-04-17 1990-08-14 Exar Corporation Programmable bonding pad with sandwiched silicon oxide and silicon nitride layers
US8092734B2 (en) * 2004-05-13 2012-01-10 Aptina Imaging Corporation Covers for microelectronic imagers and methods for wafer-level packaging of microelectronics imagers
US9190549B2 (en) * 2012-02-28 2015-11-17 International Business Machines Corporation Solar cell made using a barrier layer between p-type and intrinsic layers

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE533946A (fr) * 1953-12-09
NL92927C (fr) * 1954-07-27
US3088888A (en) * 1959-03-31 1963-05-07 Ibm Methods of etching a semiconductor device
NL301034A (fr) * 1962-11-27
US3381182A (en) * 1964-10-19 1968-04-30 Philco Ford Corp Microcircuits having buried conductive layers
FR1483998A (fr) * 1965-05-14 1967-09-13
US3341743A (en) * 1965-10-21 1967-09-12 Texas Instruments Inc Integrated circuitry having discrete regions of semiconductor material isolated by an insulating material

Also Published As

Publication number Publication date
DE1639373C2 (de) 1978-11-09
DE1639373B1 (de) 1971-10-21
US3448354A (en) 1969-06-03
GB1145120A (en) 1969-03-12
JPS4921474B1 (fr) 1974-06-01

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Legal Events

Date Code Title Description
ST Notification of lapse