FR2063066A7 - - Google Patents

Info

Publication number
FR2063066A7
FR2063066A7 FR7000285A FR7000285A FR2063066A7 FR 2063066 A7 FR2063066 A7 FR 2063066A7 FR 7000285 A FR7000285 A FR 7000285A FR 7000285 A FR7000285 A FR 7000285A FR 2063066 A7 FR2063066 A7 FR 2063066A7
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7000285A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Application granted granted Critical
Publication of FR2063066A7 publication Critical patent/FR2063066A7/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
FR7000285A 1969-09-30 1970-01-06 Expired FR2063066A7 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691949327 DE1949327A1 (de) 1969-09-30 1969-09-30 Integrierte Halbleiterschaltungsanordnung

Publications (1)

Publication Number Publication Date
FR2063066A7 true FR2063066A7 (de) 1971-07-02

Family

ID=5746937

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7000285A Expired FR2063066A7 (de) 1969-09-30 1970-01-06

Country Status (5)

Country Link
CH (1) CH504111A (de)
DE (1) DE1949327A1 (de)
FR (1) FR2063066A7 (de)
NL (1) NL6915024A (de)
SE (1) SE352199B (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6170758A (ja) * 1984-09-06 1986-04-11 シーメンス、アクチエンゲゼルシヤフト トランジスタ構造

Also Published As

Publication number Publication date
CH504111A (de) 1971-02-28
NL6915024A (de) 1971-04-01
SE352199B (de) 1972-12-18
DE1949327A1 (de) 1971-04-01

Similar Documents

Publication Publication Date Title
AU2270770A (de)
AU429630B2 (de)
FR2072084B1 (de)
AU5461069A (de)
CS150626B2 (de)
AU2355770A (de)
AU427401B2 (de)
AU442357B2 (de)
AU425297B2 (de)
AU428129B2 (de)
AU442285B2 (de)
AU442322B2 (de)
AT308690B (de)
AU442535B2 (de)
AU410358B2 (de)
AU470661B1 (de)
AU438128B2 (de)
AU428074B2 (de)
AU5079269A (de)
AU6254169A (de)
AU4923469A (de)
AU5598769A (de)
CS155539B1 (de)
AU6261969A (de)
AU6144869A (de)

Legal Events

Date Code Title Description
ST Notification of lapse