FR2065545A1 - Dispositif a impedance reglable pour circuit integre - Google Patents

Dispositif a impedance reglable pour circuit integre

Info

Publication number
FR2065545A1
FR2065545A1 FR7038634A FR7038634A FR2065545A1 FR 2065545 A1 FR2065545 A1 FR 2065545A1 FR 7038634 A FR7038634 A FR 7038634A FR 7038634 A FR7038634 A FR 7038634A FR 2065545 A1 FR2065545 A1 FR 2065545A1
Authority
FR
France
Prior art keywords
integrated circuit
impedance device
adjustable impedance
adjustable
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7038634A
Other languages
English (en)
Inventor
John Glinski Vincent
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2065545A1 publication Critical patent/FR2065545A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/43—Resistors having PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/036—Diffusion, nonselective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
FR7038634A 1969-10-27 1970-10-26 Dispositif a impedance reglable pour circuit integre Withdrawn FR2065545A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US86954769A 1969-10-27 1969-10-27

Publications (1)

Publication Number Publication Date
FR2065545A1 true FR2065545A1 (fr) 1971-07-30

Family

ID=25353764

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7038634A Withdrawn FR2065545A1 (fr) 1969-10-27 1970-10-26 Dispositif a impedance reglable pour circuit integre

Country Status (7)

Country Link
US (1) US3591840A (fr)
AU (1) AU2135870A (fr)
BE (1) BE758009A (fr)
CH (1) CH524249A (fr)
DE (1) DE2051623A1 (fr)
FR (1) FR2065545A1 (fr)
NL (1) NL7015652A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2394143A1 (fr) * 1977-06-08 1979-01-05 Siemens Ag Element de memoire dynamique

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3855609A (en) * 1973-12-26 1974-12-17 Ibm Space charge limited transistor having recessed dielectric isolation
US3936856A (en) * 1974-05-28 1976-02-03 International Business Machines Corporation Space-charge-limited integrated circuit structure
FR2358748A1 (fr) * 1976-07-15 1978-02-10 Radiotechnique Compelec Procede d'autoalignement des elements d'un dispositif semi-conducteur et dispositif realise suivant ce procede
US4256514A (en) * 1978-11-03 1981-03-17 International Business Machines Corporation Method for forming a narrow dimensioned region on a body
US4638344A (en) * 1979-10-09 1987-01-20 Cardwell Jr Walter T Junction field-effect transistor controlled by merged depletion regions
US4698653A (en) * 1979-10-09 1987-10-06 Cardwell Jr Walter T Semiconductor devices controlled by depletion regions

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2764642A (en) * 1952-10-31 1956-09-25 Bell Telephone Labor Inc Semiconductor signal translating devices
US2816847A (en) * 1953-11-18 1957-12-17 Bell Telephone Labor Inc Method of fabricating semiconductor signal translating devices
NL233303A (fr) * 1957-11-30
US3098160A (en) * 1958-02-24 1963-07-16 Clevite Corp Field controlled avalanche semiconductive device
US3166448A (en) * 1961-04-07 1965-01-19 Clevite Corp Method for producing rib transistor
US3360698A (en) * 1964-08-24 1967-12-26 Motorola Inc Direct current semiconductor divider
US3389230A (en) * 1967-01-06 1968-06-18 Hudson Magiston Corp Semiconductive magnetic transducer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2394143A1 (fr) * 1977-06-08 1979-01-05 Siemens Ag Element de memoire dynamique

Also Published As

Publication number Publication date
AU2135870A (en) 1972-04-27
DE2051623A1 (de) 1971-05-19
BE758009A (fr) 1971-04-26
CH524249A (de) 1972-06-15
US3591840A (en) 1971-07-06
NL7015652A (fr) 1971-04-29

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Legal Events

Date Code Title Description
RE Withdrawal of published application