FR2071788A5 - - Google Patents

Info

Publication number
FR2071788A5
FR2071788A5 FR7037876A FR7037876A FR2071788A5 FR 2071788 A5 FR2071788 A5 FR 2071788A5 FR 7037876 A FR7037876 A FR 7037876A FR 7037876 A FR7037876 A FR 7037876A FR 2071788 A5 FR2071788 A5 FR 2071788A5
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7037876A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of FR2071788A5 publication Critical patent/FR2071788A5/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR7037876A 1969-11-26 1970-10-13 Expired FR2071788A5 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US88027369A 1969-11-26 1969-11-26

Publications (1)

Publication Number Publication Date
FR2071788A5 true FR2071788A5 (fr) 1971-09-17

Family

ID=25375921

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7037876A Expired FR2071788A5 (fr) 1969-11-26 1970-10-13

Country Status (5)

Country Link
US (1) US3621213A (fr)
CA (1) CA935743A (fr)
DE (1) DE2047198C3 (fr)
FR (1) FR2071788A5 (fr)
GB (1) GB1311558A (fr)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2553793A1 (fr) * 1983-10-19 1985-04-26 Crismatec Procede de commande d'une machine de tirage de monocristaux
EP0134680A3 (en) * 1983-07-29 1987-07-15 Kabushiki Kaisha Toshiba Apparatus for manufacturing a single crystal
EP0285943A1 (fr) * 1987-03-31 1988-10-12 Shin-Etsu Handotai Company, Limited Procédé de commande du diamètre d'un cristal
EP0444628A1 (fr) * 1990-02-28 1991-09-04 Shin-Etsu Handotai Company Limited Procédé de croissance automatique de la partie col d'un lingot monocristallin par la méthode Czochralski
EP0499220A1 (fr) * 1991-02-14 1992-08-19 Shin-Etsu Handotai Company, Limited Procédé de croissance automatique de la partie col d'un lingot monocristallin
USRE34375E (en) * 1987-05-05 1993-09-14 Mobil Solar Energy Corporation System for controlling apparatus for growing tubular crystalline bodies
EP0536405A4 (en) * 1991-04-26 1995-11-15 Mitsubishi Materials Corp Process for pulling up single crystal
WO2000022201A1 (fr) * 1998-10-14 2000-04-20 Memc Electronic Materials, Inc. Procede et appareil permettant de tirer un cristal avec precision
US6726764B2 (en) 2000-02-01 2004-04-27 Memc Electronic Materials, Inc. Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3805044A (en) * 1971-04-07 1974-04-16 Western Electric Co Computerized process control system for the growth of synthetic quartz crystals
US3740563A (en) * 1971-06-25 1973-06-19 Monsanto Co Electroptical system and method for sensing and controlling the diameter and melt level of pulled crystals
JPS5027480B1 (fr) * 1971-07-28 1975-09-08
US3761692A (en) * 1971-10-01 1973-09-25 Texas Instruments Inc Automated crystal pulling system
US3870477A (en) * 1972-07-10 1975-03-11 Tyco Laboratories Inc Optical control of crystal growth
US3882319A (en) * 1973-10-23 1975-05-06 Motorola Inc Automatic melt level control for growth of semiconductor crystals
US3998598A (en) * 1973-11-23 1976-12-21 Semimetals, Inc. Automatic diameter control for crystal growing facilities
GB1478192A (en) * 1974-03-29 1977-06-29 Nat Res Dev Automatically controlled crystal growth
GB1465191A (en) * 1974-03-29 1977-02-23 Nat Res Dev Automatically controlled crystal growth
DE2446293C2 (de) * 1974-04-03 1986-01-30 National Research Development Corp., London Vorrichtung zur Regelung des Stabquerschnitts beim Czochralski-Ziehen
US4350557A (en) * 1974-06-14 1982-09-21 Ferrofluidics Corporation Method for circumferential dimension measuring and control in crystal rod pulling
US4207293A (en) * 1974-06-14 1980-06-10 Varian Associates, Inc. Circumferential error signal apparatus for crystal rod pulling
US4025386A (en) * 1974-12-20 1977-05-24 Union Carbide Corporation Method for producing r-plane single crystal alpha alumina in massive form having substantially circular cross-section
DE2516197C3 (de) * 1975-04-14 1982-02-04 Schweizerische Aluminium AG, 3965 Chippis Wägevorrichtung zur automatischen Regelung des Durchmessers eines Kristalls beim Ziehen aus einem Tiegel
US4058429A (en) * 1975-12-04 1977-11-15 Westinghouse Electric Corporation Infrared temperature control of Czochralski crystal growth
US4080172A (en) * 1975-12-29 1978-03-21 Monsanto Company Zone refiner automatic control
US4289572A (en) * 1976-12-27 1981-09-15 Dow Corning Corporation Method of closing silicon tubular bodies
US4135204A (en) * 1977-06-09 1979-01-16 Chesebrough-Pond's Inc. Automatic glass blowing apparatus and method
DE3069547D1 (en) * 1980-06-26 1984-12-06 Ibm Process for controlling the oxygen content of silicon ingots pulled by the czochralski method
US4511428A (en) * 1982-07-09 1985-04-16 International Business Machines Corporation Method of controlling oxygen content and distribution in grown silicon crystals
US4633954A (en) * 1983-12-05 1987-01-06 Otis Engineering Corporation Well production controller system
DE3480721D1 (de) * 1984-08-31 1990-01-18 Gakei Denki Seisakusho Verfahren und vorrichtung zur herstellung von einkristallen.
US4794534A (en) * 1985-08-08 1988-12-27 Amoco Corporation Method of drilling a well utilizing predictive simulation with real time data
GB8715327D0 (en) * 1987-06-30 1987-08-05 Secr Defence Growth of semiconductor singel crystals
JP2678383B2 (ja) * 1989-05-30 1997-11-17 信越半導体 株式会社 単結晶上装置
US5325229A (en) * 1993-05-10 1994-06-28 Phillips Petroleum Company Temperature control of crystals used in optical oscillators
US5560759A (en) * 1994-11-14 1996-10-01 Lucent Technologies Inc. Core insertion method for making optical fiber preforms and optical fibers fabricated therefrom
JP2966322B2 (ja) * 1995-02-27 1999-10-25 三菱マテリアルシリコン株式会社 シリコン単結晶インゴット及びその製造方法
US5888299A (en) * 1995-12-27 1999-03-30 Shin-Etsu Handotai Co., Ltd. Apparatus for adjusting initial position of melt surface
JPH09255485A (ja) * 1996-03-15 1997-09-30 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法および種結晶
DE69601424T2 (de) * 1996-06-27 1999-06-02 Wacker Siltronic Gesellschaft Fuer Halbleitermaterialien Ag, 84489 Burghausen Verfahren und Vorrichtung zur Steuerung des Kristallwachstums
JP3444178B2 (ja) * 1998-02-13 2003-09-08 信越半導体株式会社 単結晶製造方法
US6453219B1 (en) 1999-09-23 2002-09-17 Kic Thermal Profiling Method and apparatus for controlling temperature response of a part in a conveyorized thermal processor
US6560514B1 (en) 1999-09-23 2003-05-06 Kic Thermal Profiling Method and apparatus for optimizing control of a part temperature in conveyorized thermal processor
US6283379B1 (en) 2000-02-14 2001-09-04 Kic Thermal Profiling Method for correlating processor and part temperatures using an air temperature sensor for a conveyorized thermal processor
CN103764880B (zh) * 2011-08-26 2016-10-26 康萨克公司 利用可消耗电极真空电弧冶炼工艺来精炼类金属
US11414778B2 (en) 2019-07-29 2022-08-16 Globalwafers Co., Ltd. Production and use of dynamic state charts when growing a single crystal silicon ingot
CN120537029A (zh) * 2025-06-20 2025-08-26 昆明理工大学 单晶硅生长炉及其控制方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3246550A (en) * 1959-11-02 1966-04-19 Pittsburgh Plate Glass Co Length and area partitioning methods and apparatus

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0134680A3 (en) * 1983-07-29 1987-07-15 Kabushiki Kaisha Toshiba Apparatus for manufacturing a single crystal
FR2553793A1 (fr) * 1983-10-19 1985-04-26 Crismatec Procede de commande d'une machine de tirage de monocristaux
EP0142415A3 (en) * 1983-10-19 1985-06-19 Crismatec Contol process for a single crystal pulling apparatus
EP0285943A1 (fr) * 1987-03-31 1988-10-12 Shin-Etsu Handotai Company, Limited Procédé de commande du diamètre d'un cristal
USRE34375E (en) * 1987-05-05 1993-09-14 Mobil Solar Energy Corporation System for controlling apparatus for growing tubular crystalline bodies
EP0444628A1 (fr) * 1990-02-28 1991-09-04 Shin-Etsu Handotai Company Limited Procédé de croissance automatique de la partie col d'un lingot monocristallin par la méthode Czochralski
US5183528A (en) * 1990-02-28 1993-02-02 Shin-Etsu Handotai Company, Limited Method of automatic control of growing neck portion of a single crystal by the cz method
EP0499220A1 (fr) * 1991-02-14 1992-08-19 Shin-Etsu Handotai Company, Limited Procédé de croissance automatique de la partie col d'un lingot monocristallin
US5288363A (en) * 1991-02-14 1994-02-22 Shin-Etsu Handotai Company, Ltd. Automatic control method for growing single-crystal neck portions
EP0536405A4 (en) * 1991-04-26 1995-11-15 Mitsubishi Materials Corp Process for pulling up single crystal
WO2000022201A1 (fr) * 1998-10-14 2000-04-20 Memc Electronic Materials, Inc. Procede et appareil permettant de tirer un cristal avec precision
US6726764B2 (en) 2000-02-01 2004-04-27 Memc Electronic Materials, Inc. Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations

Also Published As

Publication number Publication date
US3621213A (en) 1971-11-16
DE2047198C3 (de) 1974-04-25
GB1311558A (en) 1973-03-28
DE2047198A1 (de) 1971-07-29
DE2047198B2 (de) 1973-09-13
CA935743A (en) 1973-10-23

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Legal Events

Date Code Title Description
ST Notification of lapse