FR2157702A1 - - Google Patents

Info

Publication number
FR2157702A1
FR2157702A1 FR7138454A FR7138454A FR2157702A1 FR 2157702 A1 FR2157702 A1 FR 2157702A1 FR 7138454 A FR7138454 A FR 7138454A FR 7138454 A FR7138454 A FR 7138454A FR 2157702 A1 FR2157702 A1 FR 2157702A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7138454A
Other languages
French (fr)
Other versions
FR2157702B1 (de
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe Europeenne de Semi Conducteurs de Microelectronique SA SESCOSEM
Original Assignee
Societe Europeenne de Semi Conducteurs de Microelectronique SA SESCOSEM
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe Europeenne de Semi Conducteurs de Microelectronique SA SESCOSEM filed Critical Societe Europeenne de Semi Conducteurs de Microelectronique SA SESCOSEM
Priority to FR7138454A priority Critical patent/FR2157702B1/fr
Publication of FR2157702A1 publication Critical patent/FR2157702A1/fr
Application granted granted Critical
Publication of FR2157702B1 publication Critical patent/FR2157702B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
FR7138454A 1971-10-26 1971-10-26 Expired FR2157702B1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7138454A FR2157702B1 (de) 1971-10-26 1971-10-26

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7138454A FR2157702B1 (de) 1971-10-26 1971-10-26

Publications (2)

Publication Number Publication Date
FR2157702A1 true FR2157702A1 (de) 1973-06-08
FR2157702B1 FR2157702B1 (de) 1974-05-31

Family

ID=9084916

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7138454A Expired FR2157702B1 (de) 1971-10-26 1971-10-26

Country Status (1)

Country Link
FR (1) FR2157702B1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3048816A1 (de) * 1979-12-26 1981-09-17 Hitachi Microcomputer Engineering Ltd., Tokyo Durchbruch-referenzdiode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3418180A (en) * 1965-06-14 1968-12-24 Ncr Co p-n junction formation by thermal oxydation

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3418180A (en) * 1965-06-14 1968-12-24 Ncr Co p-n junction formation by thermal oxydation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3048816A1 (de) * 1979-12-26 1981-09-17 Hitachi Microcomputer Engineering Ltd., Tokyo Durchbruch-referenzdiode

Also Published As

Publication number Publication date
FR2157702B1 (de) 1974-05-31

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Legal Events

Date Code Title Description
ST Notification of lapse