FR2258004B1 - - Google Patents

Info

Publication number
FR2258004B1
FR2258004B1 FR7431498A FR7431498A FR2258004B1 FR 2258004 B1 FR2258004 B1 FR 2258004B1 FR 7431498 A FR7431498 A FR 7431498A FR 7431498 A FR7431498 A FR 7431498A FR 2258004 B1 FR2258004 B1 FR 2258004B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7431498A
Other versions
FR2258004A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2258004A1 publication Critical patent/FR2258004A1/fr
Application granted granted Critical
Publication of FR2258004B1 publication Critical patent/FR2258004B1/fr
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356104Bistable circuits using complementary field-effect transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B10/00Static random access memory [SRAM] devices
    • H10B10/15Static random access memory [SRAM] devices comprising a resistor load element
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85Complementary IGFETs, e.g. CMOS
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
FR7431498A 1973-09-28 1974-09-18 Expired FR2258004B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732348984 DE2348984A1 (de) 1973-09-28 1973-09-28 Anordnung mit feldeffekttransistoren

Publications (2)

Publication Number Publication Date
FR2258004A1 FR2258004A1 (fr) 1975-08-08
FR2258004B1 true FR2258004B1 (fr) 1978-08-11

Family

ID=5894060

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7431498A Expired FR2258004B1 (fr) 1973-09-28 1974-09-18

Country Status (11)

Country Link
US (1) US3975718A (fr)
JP (1) JPS5725915B2 (fr)
BE (1) BE820447A (fr)
CA (1) CA1046640A (fr)
DE (1) DE2348984A1 (fr)
DK (1) DK513174A (fr)
FR (1) FR2258004B1 (fr)
GB (1) GB1486798A (fr)
IT (1) IT1022332B (fr)
LU (1) LU71006A1 (fr)
NL (1) NL7412817A (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52153630A (en) * 1976-06-16 1977-12-20 Matsushita Electric Ind Co Ltd Semiconductor memory device
GB1575741A (en) * 1977-01-17 1980-09-24 Philips Electronic Associated Integrated circuits
US4191898A (en) * 1978-05-01 1980-03-04 Motorola, Inc. High voltage CMOS circuit
US4707808A (en) * 1985-04-26 1987-11-17 Rockwell International Corporation Small size, high speed GaAs data latch
DE4041260A1 (de) * 1990-12-21 1992-07-02 Messerschmitt Boelkow Blohm Ausleseschaltung fuer eine statische speicherzelle
TWI381620B (zh) * 2009-05-15 2013-01-01 洋鑫科技股份有限公司 具邏輯控制之無橋式功因修正器

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3753248A (en) * 1972-06-09 1973-08-14 Bell Telephone Labor Inc Two-terminal nondestructive read jfet-npn transistor semiconductor memory

Also Published As

Publication number Publication date
IT1022332B (it) 1978-03-20
CA1046640A (fr) 1979-01-16
LU71006A1 (fr) 1975-04-17
NL7412817A (nl) 1975-04-02
JPS5725915B2 (fr) 1982-06-01
FR2258004A1 (fr) 1975-08-08
DE2348984A1 (de) 1975-04-24
US3975718A (en) 1976-08-17
JPS5062334A (fr) 1975-05-28
GB1486798A (en) 1977-09-21
BE820447A (fr) 1975-01-16
DK513174A (fr) 1975-05-12

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Legal Events

Date Code Title Description
ST Notification of lapse