FR2286469A1 - Element de memoire statique et procede pour sa fabrication - Google Patents

Element de memoire statique et procede pour sa fabrication

Info

Publication number
FR2286469A1
FR2286469A1 FR7529249A FR7529249A FR2286469A1 FR 2286469 A1 FR2286469 A1 FR 2286469A1 FR 7529249 A FR7529249 A FR 7529249A FR 7529249 A FR7529249 A FR 7529249A FR 2286469 A1 FR2286469 A1 FR 2286469A1
Authority
FR
France
Prior art keywords
manufacturing
memory element
static memory
static
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7529249A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2286469A1 publication Critical patent/FR2286469A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Memories (AREA)
FR7529249A 1974-09-26 1975-09-24 Element de memoire statique et procede pour sa fabrication Withdrawn FR2286469A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19742446088 DE2446088A1 (de) 1974-09-26 1974-09-26 Statisches speicherelement und verfahren zu seiner herstellung

Publications (1)

Publication Number Publication Date
FR2286469A1 true FR2286469A1 (fr) 1976-04-23

Family

ID=5926849

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7529249A Withdrawn FR2286469A1 (fr) 1974-09-26 1975-09-24 Element de memoire statique et procede pour sa fabrication

Country Status (8)

Country Link
US (1) US4027320A (fr)
JP (1) JPS5160472A (fr)
BE (1) BE833890A (fr)
DE (1) DE2446088A1 (fr)
FR (1) FR2286469A1 (fr)
GB (1) GB1511057A (fr)
IT (1) IT1042858B (fr)
NL (1) NL7511308A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0002420A1 (fr) * 1977-12-01 1979-06-13 International Business Machines Corporation Dispositif semi-conducteur du type transistor à effet de champ activé par la lumière et mémoire en résultant

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4143393A (en) * 1977-06-21 1979-03-06 International Business Machines Corporation High field capacitor structure employing a carrier trapping region
US4197144A (en) * 1978-09-21 1980-04-08 General Electric Company Method for improving writing of information in memory targets
JPS59145576A (ja) * 1982-11-09 1984-08-21 ザイトレツクス・コ−ポレ−シヨン プログラム可能なｍｏｓトランジスタ
JP4105353B2 (ja) * 1999-07-26 2008-06-25 財団法人国際科学振興財団 半導体装置
JP4397491B2 (ja) * 1999-11-30 2010-01-13 財団法人国際科学振興財団 １１１面方位を表面に有するシリコンを用いた半導体装置およびその形成方法
WO2003003473A1 (fr) * 2001-06-28 2003-01-09 Hitachi, Ltd. Cellule memoire a semi-conducteurs non volatile, memoire a semi-conducteurs et procede pour produire une memoire a semi-conducteurs non volatile

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3852120A (en) * 1973-05-29 1974-12-03 Ibm Method for manufacturing ion implanted insulated gate field effect semiconductor transistor devices
US3922708A (en) * 1974-03-04 1975-11-25 Ibm Method of producing high value ion implanted resistors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0002420A1 (fr) * 1977-12-01 1979-06-13 International Business Machines Corporation Dispositif semi-conducteur du type transistor à effet de champ activé par la lumière et mémoire en résultant

Also Published As

Publication number Publication date
GB1511057A (en) 1978-05-17
IT1042858B (it) 1980-01-30
DE2446088A1 (de) 1976-04-01
BE833890A (fr) 1976-01-16
US4027320A (en) 1977-05-31
NL7511308A (nl) 1976-03-30
JPS5160472A (fr) 1976-05-26

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Legal Events

Date Code Title Description
ST Notification of lapse