FR2287776A1 - Procede de fabrication en serie de diodes photoemissives et diodes ainsi realisees - Google Patents

Procede de fabrication en serie de diodes photoemissives et diodes ainsi realisees

Info

Publication number
FR2287776A1
FR2287776A1 FR7433891A FR7433891A FR2287776A1 FR 2287776 A1 FR2287776 A1 FR 2287776A1 FR 7433891 A FR7433891 A FR 7433891A FR 7433891 A FR7433891 A FR 7433891A FR 2287776 A1 FR2287776 A1 FR 2287776A1
Authority
FR
France
Prior art keywords
layer
diodes
wafer
matl
depositing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7433891A
Other languages
English (en)
Other versions
FR2287776B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lignes Telegraphiques et Telephoniques LTT SA
Original Assignee
Lignes Telegraphiques et Telephoniques LTT SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lignes Telegraphiques et Telephoniques LTT SA filed Critical Lignes Telegraphiques et Telephoniques LTT SA
Priority to FR7433891A priority Critical patent/FR2287776A1/fr
Publication of FR2287776A1 publication Critical patent/FR2287776A1/fr
Application granted granted Critical
Publication of FR2287776B1 publication Critical patent/FR2287776B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes

Landscapes

  • Led Devices (AREA)
FR7433891A 1974-10-09 1974-10-09 Procede de fabrication en serie de diodes photoemissives et diodes ainsi realisees Granted FR2287776A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7433891A FR2287776A1 (fr) 1974-10-09 1974-10-09 Procede de fabrication en serie de diodes photoemissives et diodes ainsi realisees

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7433891A FR2287776A1 (fr) 1974-10-09 1974-10-09 Procede de fabrication en serie de diodes photoemissives et diodes ainsi realisees

Publications (2)

Publication Number Publication Date
FR2287776A1 true FR2287776A1 (fr) 1976-05-07
FR2287776B1 FR2287776B1 (fr) 1977-03-18

Family

ID=9143881

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7433891A Granted FR2287776A1 (fr) 1974-10-09 1974-10-09 Procede de fabrication en serie de diodes photoemissives et diodes ainsi realisees

Country Status (1)

Country Link
FR (1) FR2287776A1 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1495476A (fr) * 1966-06-03 1967-09-22 Csf Procédé d'oxydation de l'arséniure de gallium
FR2116159A5 (fr) * 1970-11-30 1972-07-07 Western Electric Co
US3728784A (en) * 1971-04-15 1973-04-24 Monsanto Co Fabrication of semiconductor devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1495476A (fr) * 1966-06-03 1967-09-22 Csf Procédé d'oxydation de l'arséniure de gallium
FR2116159A5 (fr) * 1970-11-30 1972-07-07 Western Electric Co
US3728784A (en) * 1971-04-15 1973-04-24 Monsanto Co Fabrication of semiconductor devices

Also Published As

Publication number Publication date
FR2287776B1 (fr) 1977-03-18

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Legal Events

Date Code Title Description
ST Notification of lapse