FR2314264A2 - Procede de depot d'une couche mince et tres pure d'un materiau forme par une reaction chimique en phase gazeuse - Google Patents

Procede de depot d'une couche mince et tres pure d'un materiau forme par une reaction chimique en phase gazeuse

Info

Publication number: FR2314264A2
Authority: FR; France
Prior art keywords: high frequency; thin films; reactive sputtering; reaction gases; contg
Prior art date: 1975-06-10
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

FR7518043A

Other languages

English (en)

French (fr)

Other versions

FR2314264B2 (2

Inventor

Bernard Bourdon

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Cegelec SA

Original Assignee

Cegelec SA

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1975-06-10

Filing date

1975-06-10

Publication date

1977-01-07

1975-06-10 Application filed by Cegelec SA filed Critical Cegelec SA

1975-06-10 Priority to FR7518043A priority Critical patent/FR2314264A2/fr

1977-01-07 Publication of FR2314264A2 publication Critical patent/FR2314264A2/fr

1980-03-28 Application granted granted Critical

1980-03-28 Publication of FR2314264B2 publication Critical patent/FR2314264B2/fr

Status Granted legal-status Critical Current

Links

239000007789 gas Substances 0.000 title abstract 3
238000005546 reactive sputtering Methods 0.000 title 1
239000010409 thin film Substances 0.000 title 1
239000000758 substrate Substances 0.000 abstract 3
BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 2
229910052581 Si3N4 Inorganic materials 0.000 abstract 1
RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 abstract 1
229910000070 arsenic hydride Inorganic materials 0.000 abstract 1
238000005229 chemical vapour deposition Methods 0.000 abstract 1
238000000034 method Methods 0.000 abstract 1
239000012495 reaction gas Substances 0.000 abstract 1
239000004065 semiconductor Substances 0.000 abstract 1
238000004544 sputter deposition Methods 0.000 abstract 1

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
General Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Physics & Mathematics (AREA)
Plasma & Fusion (AREA)
Inorganic Chemistry (AREA)
Physical Vapour Deposition (AREA)

FR7518043A 1975-06-10 1975-06-10 Procede de depot d'une couche mince et tres pure d'un materiau forme par une reaction chimique en phase gazeuse Granted FR2314264A2 (fr)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
FR7518043A FR2314264A2 (fr)	1975-06-10	1975-06-10	Procede de depot d'une couche mince et tres pure d'un materiau forme par une reaction chimique en phase gazeuse

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
FR7518043A FR2314264A2 (fr)	1975-06-10	1975-06-10	Procede de depot d'une couche mince et tres pure d'un materiau forme par une reaction chimique en phase gazeuse

Publications (2)

Publication Number	Publication Date
FR2314264A2 true FR2314264A2 (fr)	1977-01-07
FR2314264B2 FR2314264B2 (2)	1980-03-28

Family

ID=9156264

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR7518043A Granted FR2314264A2 (fr)	1975-06-10	1975-06-10	Procede de depot d'une couche mince et tres pure d'un materiau forme par une reaction chimique en phase gazeuse

Country Status (1)

Country	Link
FR (1)	FR2314264A2 (2)

1975
- 1975-06-10 FR FR7518043A patent/FR2314264A2/fr active Granted

Also Published As

Publication number	Publication date
FR2314264B2 (2)	1980-03-28

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Legal Events

Date	Code	Title	Description
1979-01-26	CL	Concession to grant licenses