FR2355314A1 - Procede pour realiser des masques pour la lithographie aux rayons x - Google Patents

Procede pour realiser des masques pour la lithographie aux rayons x

Info

Publication number
FR2355314A1
FR2355314A1 FR7717507A FR7717507A FR2355314A1 FR 2355314 A1 FR2355314 A1 FR 2355314A1 FR 7717507 A FR7717507 A FR 7717507A FR 7717507 A FR7717507 A FR 7717507A FR 2355314 A1 FR2355314 A1 FR 2355314A1
Authority
FR
France
Prior art keywords
support
mask
ray lithography
support base
making masks
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7717507A
Other languages
English (en)
Other versions
FR2355314B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2355314A1 publication Critical patent/FR2355314A1/fr
Application granted granted Critical
Publication of FR2355314B1 publication Critical patent/FR2355314B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Physical Vapour Deposition (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

L'invention concerne un procédé pour réaliser des masques pour la lithographie aux rayons X. Selon ce procédé de fabrication d'un masque formé par un support 2 d'une structure, par une structure opaque aux rayons X et par un cadre extérieur de support, le support 2 de la structure est constitué par un métal ou une matiere plastique et est formé, avec une structure du masque 40, sur une base de support 1 et on attaque ensuite la base de support 1 selon une action sélective en utilisant un revêtement 5 de protection contre l'attaque chimique de manière que seule subsiste la zone marginale de la base de support 1, qui forme le cadre extérieur du masque Application notamment à la réalisation de structures fines de circuits intégrés.
FR7717507A 1976-06-15 1977-06-08 Procede pour realiser des masques pour la lithographie aux rayons x Granted FR2355314A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762626851 DE2626851C3 (de) 1976-06-15 1976-06-15 Verfahren zur Herstellung von Masken für die Röntgenlithographie

Publications (2)

Publication Number Publication Date
FR2355314A1 true FR2355314A1 (fr) 1978-01-13
FR2355314B1 FR2355314B1 (fr) 1981-08-14

Family

ID=5980611

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7717507A Granted FR2355314A1 (fr) 1976-06-15 1977-06-08 Procede pour realiser des masques pour la lithographie aux rayons x

Country Status (7)

Country Link
JP (1) JPS52153673A (fr)
BE (1) BE855701A (fr)
DE (1) DE2626851C3 (fr)
FR (1) FR2355314A1 (fr)
GB (1) GB1544787A (fr)
IT (1) IT1083777B (fr)
NL (1) NL186201C (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4171489A (en) * 1978-09-13 1979-10-16 Bell Telephone Laboratories, Incorporated Radiation mask structure
GB2089524B (en) * 1980-12-17 1984-12-05 Westinghouse Electric Corp High resolution lithographic process
GB2121980B (en) * 1982-06-10 1986-02-05 Standard Telephones Cables Ltd X ray masks
DE3435178A1 (de) * 1983-09-26 1985-04-04 Canon K.K., Tokio/Tokyo Gegenstand mit maskenstruktur fuer die lithografie
DE3338717A1 (de) * 1983-10-25 1985-05-02 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung einer roentgenmaske mit metalltraegerfolie
JPS6169133A (ja) * 1985-05-07 1986-04-09 Chiyou Lsi Gijutsu Kenkyu Kumiai 軟ｘ線露光方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1948141A1 (de) * 1968-09-23 1970-04-23 Polaroid Corp Optisches Element mit Antireflexueberzug

Also Published As

Publication number Publication date
IT1083777B (it) 1985-05-25
DE2626851B2 (de) 1981-07-02
NL7706552A (nl) 1977-12-19
DE2626851C3 (de) 1982-03-18
JPS52153673A (en) 1977-12-20
BE855701A (fr) 1977-10-03
NL186201C (nl) 1990-10-01
GB1544787A (en) 1979-04-25
DE2626851A1 (de) 1977-12-22
FR2355314B1 (fr) 1981-08-14

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Legal Events

Date Code Title Description
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