FR2371064A2 - Dispositif a semi-conducteurs - Google Patents

Dispositif a semi-conducteurs

Info

Publication number
FR2371064A2
FR2371064A2 FR7734251A FR7734251A FR2371064A2 FR 2371064 A2 FR2371064 A2 FR 2371064A2 FR 7734251 A FR7734251 A FR 7734251A FR 7734251 A FR7734251 A FR 7734251A FR 2371064 A2 FR2371064 A2 FR 2371064A2
Authority
FR
France
Prior art keywords
type
semiconductor device
polycrystalline layer
layer
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR7734251A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2371064A2 publication Critical patent/FR2371064A2/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6738—Schottky barrier electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/012—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/0124—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/018—Compensation doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/02—Contacts, special

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
  • Led Devices (AREA)

Abstract

a. Pastille semi-conductrice. b. Elle comprend un substrat conducteur de l'électricité sur lequel est déposée successivement une couche de contact en GaAs de type p, une couche polycristalline en InP de type p et une couche polycristalline en CdS de type n. c. Application aux piles solaires.
FR7734251A 1976-11-16 1977-11-15 Dispositif a semi-conducteurs Pending FR2371064A2 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/742,519 US4074305A (en) 1976-11-16 1976-11-16 Gaas layers as contacts to thin film semiconductor layers

Publications (1)

Publication Number Publication Date
FR2371064A2 true FR2371064A2 (fr) 1978-06-09

Family

ID=24985146

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7734251A Pending FR2371064A2 (fr) 1976-11-16 1977-11-15 Dispositif a semi-conducteurs

Country Status (7)

Country Link
US (1) US4074305A (fr)
JP (1) JPS5383461A (fr)
DE (1) DE2750883A1 (fr)
FR (1) FR2371064A2 (fr)
GB (1) GB1572280A (fr)
IT (1) IT1113687B (fr)
NL (1) NL7712388A (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4158849A (en) * 1978-03-27 1979-06-19 Rca Corporation Heterojunction semiconductor device
US4203785A (en) * 1978-11-30 1980-05-20 Rca Corporation Method of epitaxially depositing cadmium sulfide
US4213801A (en) * 1979-03-26 1980-07-22 Bell Telephone Laboratories, Incorporated Ohmic contact of N-GaAs to electrical conductive substrates by controlled growth of N-GaAs polycrystalline layers
US4482913A (en) * 1982-02-24 1984-11-13 Westinghouse Electric Corp. Semiconductor device soldered to a graphite substrate
JPS63166285A (ja) * 1986-12-26 1988-07-09 Toshiba Corp 半導体発光装置の製造方法
JPH06310438A (ja) * 1993-04-22 1994-11-04 Mitsubishi Electric Corp 化合物半導体気相成長用基板ホルダおよび化合物半導体気相成長装置
US5557146A (en) * 1993-07-14 1996-09-17 University Of South Florida Ohmic contact using binder paste with semiconductor material dispersed therein
US5689125A (en) * 1995-06-12 1997-11-18 The United States Of America As Represented By The Secretary Of The Air Force Cadmium sulfide interface layers for improving III-V semiconductor device performance and characteristics
KR101846337B1 (ko) * 2011-11-09 2018-04-09 엘지이노텍 주식회사 태양전지 및 이의 제조방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3914785A (en) * 1973-12-03 1975-10-21 Bell Telephone Labor Inc Germanium doped GaAs layer as an ohmic contact

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3802967A (en) * 1971-08-27 1974-04-09 Rca Corp Iii-v compound on insulating substrate and its preparation and use

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3914785A (en) * 1973-12-03 1975-10-21 Bell Telephone Labor Inc Germanium doped GaAs layer as an ohmic contact

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/76 *

Also Published As

Publication number Publication date
JPS5383461A (en) 1978-07-22
GB1572280A (en) 1980-07-30
US4074305A (en) 1978-02-14
NL7712388A (nl) 1978-05-18
DE2750883A1 (de) 1978-05-18
IT1113687B (it) 1986-01-20

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