FR2373879A1 - Structure semiconductrice a dielectrique epais, procede de fabrication et dispositifs a tres haute frequence comportant une telle structure - Google Patents

Structure semiconductrice a dielectrique epais, procede de fabrication et dispositifs a tres haute frequence comportant une telle structure

Info

Publication number
FR2373879A1
FR2373879A1 FR7636786A FR7636786A FR2373879A1 FR 2373879 A1 FR2373879 A1 FR 2373879A1 FR 7636786 A FR7636786 A FR 7636786A FR 7636786 A FR7636786 A FR 7636786A FR 2373879 A1 FR2373879 A1 FR 2373879A1
Authority
FR
France
Prior art keywords
mesa
diode
semiconductor structure
substrate
highly doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7636786A
Other languages
English (en)
Other versions
FR2373879B1 (fr
Inventor
Raymond Henry
Jean-Victor Bouvet
Alain Chapard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7636786A priority Critical patent/FR2373879A1/fr
Publication of FR2373879A1 publication Critical patent/FR2373879A1/fr
Application granted granted Critical
Publication of FR2373879B1 publication Critical patent/FR2373879B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/40—Transit-time diodes, e.g. IMPATT or TRAPATT diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices

Landscapes

  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

L'invention concerne les dispositifs à semiconducteurs destinés à fonctionner à des fréquences supérieures à 1 GHz. Dans la structure selon l'invention, une diode de type << mésa >> est réduite à sa partie << mésa >> tout en gardant un substrat résiduel fortement dopé. Elle est entourée de diélectrique de manière à constituer un bloc de grandes dimensions par rapport à la diode. Le bloc présente deux grandes faces planes et parallèles portant, chacune, une métallisation. Un contact direct est établi, côté substrat, entre la diode et l'une des métallisations. Un plot épais de métal bon conducteur de la chaleur et de l'électricité assure le contact du côté de la face opposée. Application aux émetteurs, récepteurs, limiteurs, diodes de commutation en très haute fréquence.
FR7636786A 1976-12-07 1976-12-07 Structure semiconductrice a dielectrique epais, procede de fabrication et dispositifs a tres haute frequence comportant une telle structure Granted FR2373879A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7636786A FR2373879A1 (fr) 1976-12-07 1976-12-07 Structure semiconductrice a dielectrique epais, procede de fabrication et dispositifs a tres haute frequence comportant une telle structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7636786A FR2373879A1 (fr) 1976-12-07 1976-12-07 Structure semiconductrice a dielectrique epais, procede de fabrication et dispositifs a tres haute frequence comportant une telle structure

Publications (2)

Publication Number Publication Date
FR2373879A1 true FR2373879A1 (fr) 1978-07-07
FR2373879B1 FR2373879B1 (fr) 1980-02-08

Family

ID=9180741

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7636786A Granted FR2373879A1 (fr) 1976-12-07 1976-12-07 Structure semiconductrice a dielectrique epais, procede de fabrication et dispositifs a tres haute frequence comportant une telle structure

Country Status (1)

Country Link
FR (1) FR2373879A1 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0029334A1 (fr) * 1979-11-15 1981-05-27 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Combinaison des dispositifs semiconducteurs à deux électrodes connectés en série et leur fabrication
US4340900A (en) * 1979-06-19 1982-07-20 The United States Of America As Represented By The Secretary Of The Air Force Mesa epitaxial diode with oxide passivated junction and plated heat sink
EP0417851A3 (en) * 1989-09-15 1991-09-25 Philips Electronic And Associated Industries Limited Two-terminal non-linear devices and their method of fabrication
US5164813A (en) * 1988-06-24 1992-11-17 Unitrode Corporation New diode structure
US5179035A (en) * 1989-09-15 1993-01-12 U.S. Philips Corporation Method of fabricating two-terminal non-linear devices
WO2002001629A1 (fr) * 2000-06-28 2002-01-03 Marconi Applied Technologies Limited Composant a semi-conducteur et procede de fabrication

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4340900A (en) * 1979-06-19 1982-07-20 The United States Of America As Represented By The Secretary Of The Air Force Mesa epitaxial diode with oxide passivated junction and plated heat sink
EP0029334A1 (fr) * 1979-11-15 1981-05-27 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Combinaison des dispositifs semiconducteurs à deux électrodes connectés en série et leur fabrication
US5164813A (en) * 1988-06-24 1992-11-17 Unitrode Corporation New diode structure
EP0417851A3 (en) * 1989-09-15 1991-09-25 Philips Electronic And Associated Industries Limited Two-terminal non-linear devices and their method of fabrication
US5179035A (en) * 1989-09-15 1993-01-12 U.S. Philips Corporation Method of fabricating two-terminal non-linear devices
WO2002001629A1 (fr) * 2000-06-28 2002-01-03 Marconi Applied Technologies Limited Composant a semi-conducteur et procede de fabrication

Also Published As

Publication number Publication date
FR2373879B1 (fr) 1980-02-08

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Legal Events

Date Code Title Description
ST Notification of lapse