FR2382094A1 - Passivation d'une interception de surface d'une jonction pn - Google Patents

Passivation d'une interception de surface d'une jonction pn

Info

Publication number
FR2382094A1
FR2382094A1 FR7804586A FR7804586A FR2382094A1 FR 2382094 A1 FR2382094 A1 FR 2382094A1 FR 7804586 A FR7804586 A FR 7804586A FR 7804586 A FR7804586 A FR 7804586A FR 2382094 A1 FR2382094 A1 FR 2382094A1
Authority
FR
France
Prior art keywords
junction
passivation
layer
regions
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7804586A
Other languages
English (en)
Other versions
FR2382094B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2382094A1 publication Critical patent/FR2382094A1/fr
Application granted granted Critical
Publication of FR2382094B1 publication Critical patent/FR2382094B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/481Encapsulations, e.g. protective coatings characterised by their materials comprising semiconductor materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662Laminate layers, e.g. stacks of alternating high-k metal oxides
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69Inorganic materials
    • H10P14/692Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69Inorganic materials
    • H10P14/692Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3

Landscapes

  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

L'invention concerne un dispositif semi-conducteur comprenant un corps semi-conducteur ayant une surface, au moins deux régions de types de conductivité opposés dans le corps, une jonction PN à l'interface entre les deux régions, cette jonction PN s'étendant jusqu'à la surface du corps, et une couche de silicium polycristallin de forte résistivité sur la surface. Selon l'invention, une couche 24 d'un matériau particulaire de passivation est déposée sur la couche en silicium polycristallin 22. L'invention s'applique notamment à l'industrie de semi-conducteurs.
FR7804586A 1977-02-24 1978-02-17 Passivation d'une interception de surface d'une jonction pn Expired FR2382094B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US77168177A 1977-02-24 1977-02-24

Publications (2)

Publication Number Publication Date
FR2382094A1 true FR2382094A1 (fr) 1978-09-22
FR2382094B1 FR2382094B1 (fr) 1985-07-19

Family

ID=25092625

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7804586A Expired FR2382094B1 (fr) 1977-02-24 1978-02-17 Passivation d'une interception de surface d'une jonction pn

Country Status (10)

Country Link
JP (1) JPS53105978A (fr)
BE (1) BE864270A (fr)
DE (1) DE2806493A1 (fr)
FR (1) FR2382094B1 (fr)
GB (1) GB1552759A (fr)
IN (1) IN147572B (fr)
IT (1) IT1091594B (fr)
PL (1) PL116754B1 (fr)
SE (1) SE7801091L (fr)
YU (1) YU14978A (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4344985A (en) 1981-03-27 1982-08-17 Rca Corporation Method of passivating a semiconductor device with a multi-layer passivant system by thermally growing a layer of oxide on an oxygen doped polycrystalline silicon layer
US4420765A (en) 1981-05-29 1983-12-13 Rca Corporation Multi-layer passivant system
JPS6312166U (fr) * 1986-07-08 1988-01-26
CA1339817C (fr) * 1989-05-31 1998-04-14 Mitel Corporation Operation de chauffage et de passivation de materiaux de spin sur verre utilisant un plasma et produits avec ces operations
JPH0316373U (fr) * 1989-06-28 1991-02-19

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1250099A (fr) * 1969-04-14 1971-10-20
DE1274736B (de) * 1964-12-03 1974-02-07 Verfahren zur herstellung einer halbleitervorrichtung
FR2266301A1 (fr) * 1974-03-30 1975-10-24 Sony Corp
US4007476A (en) * 1975-04-21 1977-02-08 Hutson Jearld L Technique for passivating semiconductor devices

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3895127A (en) * 1974-04-19 1975-07-15 Rca Corp Method of selectively depositing glass on semiconductor devices
NL7500492A (nl) * 1975-01-16 1976-07-20 Philips Nv Werkwijze voor het vervaardigen van halfgelei- derinrichtingen, waarbij een glazen bedekking wordt aangebracht, en halfgeleiderinrichtingen, vervaardigd volgens deze werkwijze.

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1274736B (de) * 1964-12-03 1974-02-07 Verfahren zur herstellung einer halbleitervorrichtung
GB1250099A (fr) * 1969-04-14 1971-10-20
FR2266301A1 (fr) * 1974-03-30 1975-10-24 Sony Corp
US4007476A (en) * 1975-04-21 1977-02-08 Hutson Jearld L Technique for passivating semiconductor devices

Also Published As

Publication number Publication date
IT7819030A0 (it) 1978-01-04
IN147572B (fr) 1980-04-19
JPS5626980B2 (fr) 1981-06-22
IT1091594B (it) 1985-07-06
JPS53105978A (en) 1978-09-14
FR2382094B1 (fr) 1985-07-19
SE7801091L (sv) 1978-08-25
GB1552759A (en) 1979-09-19
PL116754B1 (en) 1981-06-30
YU14978A (en) 1982-10-31
DE2806493A1 (de) 1978-08-31
BE864270A (fr) 1978-06-16
PL204820A1 (pl) 1978-11-06

Similar Documents

Publication Publication Date Title
FR2429493A1 (fr) Compose de passivation pour un dispositif semi-conducteur, comprenant une couche de nitrure de silicium (si3n4) et une couche de verre au phosphosilicate (psg), et methode de fabrication
FR2361750A1 (fr) Dispositif semi-conducteur a jonction redresseuse metal-semi-conducteur
FR2469004A1 (fr) Photopiles notamment au silicium et batterie constituee de telles photopiles
TNSN86141A1 (fr) Cellule solaire
FR2414796A1 (fr) Dispositif semi-conducteur mis a heterojonction
JPS54157092A (en) Semiconductor integrated circuit device
FR2440080A1 (fr) Dispositifs semi-conducteurs et procede de fabrication d'un semi-conducteur comportant des regions en silicium poreux realisees par anodination
FR2592227A1 (fr) Dispositif photoemissif a semi-conducteur de type directionnel
FR2382094A1 (fr) Passivation d'une interception de surface d'une jonction pn
RU96119670A (ru) Лавинный фотодиод
FR2404303A1 (fr) Composant a couplage direct de charge
KR900017129A (ko) 반도체 소자용 배면 금속화 스킴(scheme) 및 그의 제조 방법
FR2428189A1 (fr) Dispositif racleur
FR2386140A1 (fr) Dispositif a couplage direct de charge
FR2371778A1 (fr) Dispositif semi-conducteur
FR2375724A1 (fr) Perfectionnement a un dispositif semi-conducteur
FR2410880A1 (fr) Dispositifs a semi-conducteurs du type lateral
FR2382095A1 (fr) Structure de passivation en plusieurs couches et procede de fabrication
FR2438342A1 (fr) Dispositif a semi-conducteurs du type mos a rainures en u
JPS5792877A (en) Photo-receiving semiconductor
GB923153A (en) Semiconductor strain gauge
FR2356276A1 (fr) Dispositif semi-conducteur a tension de rupture elevee
FR2435131A1 (fr) Diode capacitive
JPS5533075A (en) Mesa semiconductor device
GB1197315A (en) Semiconductor Device