FR2406302A1 - Procede d'implantation d'ions - Google Patents

Procede d'implantation d'ions

Info

Publication number
FR2406302A1
FR2406302A1 FR7829058A FR7829058A FR2406302A1 FR 2406302 A1 FR2406302 A1 FR 2406302A1 FR 7829058 A FR7829058 A FR 7829058A FR 7829058 A FR7829058 A FR 7829058A FR 2406302 A1 FR2406302 A1 FR 2406302A1
Authority
FR
France
Prior art keywords
ion implantation
implantation process
contact
conductive layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7829058A
Other languages
English (en)
Other versions
FR2406302B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of FR2406302A1 publication Critical patent/FR2406302A1/fr
Application granted granted Critical
Publication of FR2406302B1 publication Critical patent/FR2406302B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0181—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H10P30/212—Through-implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/28—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by an annealing step, e.g. for activation of dopants
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/141—Self-alignment coat gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/147—Silicides

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

L'invention concerne un procédé d'implantation d'ions, permettant d'éviter l'accumulation de charge. Une mince couche conductrice est formée en contact avec la couche isolante sur un substrat semi-conducteur, avant l'opération d'implantation d'ions. Les ions sont implantés dans le substrat à travers la mince couche conductrice. Cette mince couche, en contact avec un support dans un appareil d'implantation, permet d'éliminer toutes les charges qui tendent à s'accumuler. L'invention s'applique notamment à la fabrication des composants semi-conducteurs MOS et CMOS.
FR7829058A 1977-10-11 1978-10-11 Procede d'implantation d'ions Granted FR2406302A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/840,793 US4224733A (en) 1977-10-11 1977-10-11 Ion implantation method

Publications (2)

Publication Number Publication Date
FR2406302A1 true FR2406302A1 (fr) 1979-05-11
FR2406302B1 FR2406302B1 (fr) 1983-12-30

Family

ID=25283248

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7829058A Granted FR2406302A1 (fr) 1977-10-11 1978-10-11 Procede d'implantation d'ions

Country Status (7)

Country Link
US (1) US4224733A (fr)
JP (1) JPS5910052B2 (fr)
CA (1) CA1108311A (fr)
DE (1) DE2844162A1 (fr)
FR (1) FR2406302A1 (fr)
GB (1) GB1601070A (fr)
NL (1) NL7810168A (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2458902A1 (fr) * 1979-06-13 1981-01-02 Siemens Ag Procede pour fabriquer des circuits mos integres avec et sans transistors de memoire mnos selon la technologie des grilles en silicium
FR2488730A1 (fr) * 1980-08-18 1982-02-19 Western Electric Co Procede de fabrication de circuits integres par lithographie par faisceau de particules chargees
WO1982001790A1 (fr) * 1980-11-17 1982-05-27 Lewis Meirion F Ameliorations aux procedes de production de dispositifs comprenant des regions metallisees sur des substrats dielectriques
EP0379024A3 (fr) * 1989-01-20 1990-08-29 Kabushiki Kaisha Toshiba Méthode de fabrication d'un élément semi-conducteur

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4477962A (en) * 1978-05-26 1984-10-23 Rockwell International Corporation Process for and structure of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines
JPS54161894A (en) * 1978-06-13 1979-12-21 Toshiba Corp Manufacture of semiconductor device
US4325169A (en) * 1979-10-11 1982-04-20 Texas Instruments Incorporated Method of making CMOS device allowing three-level interconnects
WO1981002493A1 (fr) * 1980-02-22 1981-09-03 Mostek Corp Contact noye a auto-alignement et procede de fabrication
US4883543A (en) * 1980-06-05 1989-11-28 Texas Instruments Incroporated Shielding for implant in manufacture of dynamic memory
US4622735A (en) * 1980-12-12 1986-11-18 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing a semiconductor device utilizing self-aligned silicide regions
US4385947A (en) * 1981-07-29 1983-05-31 Harris Corporation Method for fabricating CMOS in P substrate with single guard ring using local oxidation
DE3133468A1 (de) * 1981-08-25 1983-03-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von hochintegrierten komplementaeren mos-feldeffekttransistorschaltungen in siliziumgate-technologie
US4411058A (en) * 1981-08-31 1983-10-25 Hughes Aircraft Company Process for fabricating CMOS devices with self-aligned channel stops
US4420344A (en) * 1981-10-15 1983-12-13 Texas Instruments Incorporated CMOS Source/drain implant process without compensation of polysilicon doping
US4422885A (en) * 1981-12-18 1983-12-27 Ncr Corporation Polysilicon-doped-first CMOS process
JPS5994450A (ja) * 1982-11-19 1984-05-31 Nec Kyushu Ltd 半導体装置の製造方法
US4470191A (en) * 1982-12-09 1984-09-11 International Business Machines Corporation Process for making complementary transistors by sequential implantations using oxidation barrier masking layer
GB2137806B (en) * 1983-04-05 1986-10-08 Standard Telephones Cables Ltd Ion implantation in semiconductor bodies
US5210042A (en) * 1983-09-26 1993-05-11 Fujitsu Limited Method of producing semiconductor device
JPS60116128A (ja) * 1983-11-29 1985-06-22 Seiko Instr & Electronics Ltd 半導体装置の製造方法
JPS60130844A (ja) * 1983-12-20 1985-07-12 Toshiba Corp 半導体装置の製造方法
US4578859A (en) * 1984-08-22 1986-04-01 Harris Corporation Implant mask reversal process
US4561170A (en) * 1984-07-02 1985-12-31 Texas Instruments Incorporated Method of making field-plate isolated CMOS devices
KR940006668B1 (ko) * 1984-11-22 1994-07-25 가부시끼가이샤 히다찌세이사꾸쇼 반도체 집적회로 장치의 제조방법
USH707H (en) 1984-12-04 1989-11-07 The United States Of America As Represented By The Secretary Of The Navy Method of preventing latch-up failures of CMOS integrated circuits
JPS61222175A (ja) * 1985-03-01 1986-10-02 Fujitsu Ltd 半導体記憶装置の製造方法
US4694565A (en) * 1986-04-28 1987-09-22 Rockwell International Corporation Method of making hardened CMOS sub-micron field effect transistors
JPH0746727B2 (ja) * 1986-05-30 1995-05-17 ヤマハ株式会社 半導体装置の製法
US5066995A (en) * 1987-03-13 1991-11-19 Harris Corporation Double level conductor structure
US4760032A (en) * 1987-05-29 1988-07-26 Sgs-Thomson Microelectronics, Inc. Screening of gate oxides on semiconductors
US4860079A (en) * 1987-05-29 1989-08-22 Sgs-Thompson Microelectronics, Inc. Screening of gate oxides on semiconductors
JPH0748493B2 (ja) * 1987-06-22 1995-05-24 日本電気株式会社 半導体装置及びその製造方法
JPH0770611B2 (ja) * 1987-12-11 1995-07-31 日本電気株式会社 相補型ｍｏｓ半導体装置の製造方法
JPH01206667A (ja) * 1988-02-15 1989-08-18 Toshiba Corp Ｍｏｓ型集積回路およびその製造方法
US6849872B1 (en) * 1991-08-26 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
JPH05343308A (ja) * 1992-06-09 1993-12-24 Mitsubishi Electric Corp 半導体装置の製造方法
JPH09312391A (ja) * 1996-05-22 1997-12-02 Toshiba Corp 半導体装置およびその製造方法
US6995068B1 (en) 2000-06-09 2006-02-07 Newport Fab, Llc Double-implant high performance varactor and method for manufacturing same
US6815317B2 (en) * 2002-06-05 2004-11-09 International Business Machines Corporation Method to perform deep implants without scattering to adjacent areas
US20040002202A1 (en) * 2002-06-26 2004-01-01 Horsky Thomas Neil Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions
US9132639B2 (en) * 2011-04-29 2015-09-15 Funai Electric Co., Ltd. Method for fabricating fluid ejection device
US9403365B2 (en) * 2011-04-29 2016-08-02 Funai Electric Co., Ltd. Method for fabricating fluid ejection device
JP6359925B2 (ja) 2014-09-18 2018-07-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
DE102019100312A1 (de) * 2019-01-08 2020-07-09 Parcan NanoTech Co. Ltd. Substrat für eine kontrollierte lonenimplantation und Verfahren zur Herstellung eines Substrats für eine kontrollierte lonenimplantation
JP2022089648A (ja) * 2020-12-04 2022-06-16 ローム株式会社 半導体装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2027452A1 (fr) * 1968-12-31 1970-09-25 Philips Nv

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3330696A (en) * 1967-07-11 Method of fabricating thin film capacitors
US3558366A (en) * 1968-09-17 1971-01-26 Bell Telephone Labor Inc Metal shielding for ion implanted semiconductor device
GB1289740A (fr) * 1969-12-24 1972-09-20
US4033797A (en) * 1973-05-21 1977-07-05 Hughes Aircraft Company Method of manufacturing a complementary metal-insulation-semiconductor circuit
US4075754A (en) * 1974-02-26 1978-02-28 Harris Corporation Self aligned gate for di-CMOS

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2027452A1 (fr) * 1968-12-31 1970-09-25 Philips Nv

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2458902A1 (fr) * 1979-06-13 1981-01-02 Siemens Ag Procede pour fabriquer des circuits mos integres avec et sans transistors de memoire mnos selon la technologie des grilles en silicium
FR2488730A1 (fr) * 1980-08-18 1982-02-19 Western Electric Co Procede de fabrication de circuits integres par lithographie par faisceau de particules chargees
WO1982001790A1 (fr) * 1980-11-17 1982-05-27 Lewis Meirion F Ameliorations aux procedes de production de dispositifs comprenant des regions metallisees sur des substrats dielectriques
EP0379024A3 (fr) * 1989-01-20 1990-08-29 Kabushiki Kaisha Toshiba Méthode de fabrication d'un élément semi-conducteur
US5049514A (en) * 1989-01-20 1991-09-17 Kabushiki Kaisha Toshiba Method of making a MOS device having a polycide gate

Also Published As

Publication number Publication date
NL7810168A (nl) 1979-04-17
GB1601070A (en) 1981-10-21
JPS5464460A (en) 1979-05-24
US4224733A (en) 1980-09-30
DE2844162A1 (de) 1979-04-19
JPS5910052B2 (ja) 1984-03-06
FR2406302B1 (fr) 1983-12-30
CA1108311A (fr) 1981-09-01

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Legal Events

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ST Notification of lapse