FR2427663A1 - Dispositif a transfert de charges - Google Patents

Dispositif a transfert de charges

Info

Publication number
FR2427663A1
FR2427663A1 FR7914074A FR7914074A FR2427663A1 FR 2427663 A1 FR2427663 A1 FR 2427663A1 FR 7914074 A FR7914074 A FR 7914074A FR 7914074 A FR7914074 A FR 7914074A FR 2427663 A1 FR2427663 A1 FR 2427663A1
Authority
FR
France
Prior art keywords
transfer
transfer device
load transfer
regions
elongated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7914074A
Other languages
English (en)
Other versions
FR2427663B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP6656178A external-priority patent/JPS54158176A/ja
Priority claimed from JP4236279A external-priority patent/JPS55134973A/ja
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2427663A1 publication Critical patent/FR2427663A1/fr
Application granted granted Critical
Publication of FR2427663B1 publication Critical patent/FR2427663B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472—Surface-channel CCD
    • H10D44/474—Two-phase CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/328—Channel regions of field-effect devices of FETs having PN junction gates

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

a. Dispositif à transfert de charges. b. Dispositif caractérisé en ce que les régions de transfert comportent une partie de stockage allongée dans le sens longitudinal mais de faible largeur dans la direction transversale, suivant la direction de transfert, à mesure que les régions de transfert se rapprochent transfert, à mesure que les de direction.
FR7914074A 1978-06-02 1979-05-31 Dispositif a transfert de charges Granted FR2427663A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6656178A JPS54158176A (en) 1978-06-02 1978-06-02 Charge transfer device
JP4236279A JPS55134973A (en) 1979-04-06 1979-04-06 Charge transfer device

Publications (2)

Publication Number Publication Date
FR2427663A1 true FR2427663A1 (fr) 1979-12-28
FR2427663B1 FR2427663B1 (fr) 1984-12-28

Family

ID=26382026

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7914074A Granted FR2427663A1 (fr) 1978-06-02 1979-05-31 Dispositif a transfert de charges

Country Status (6)

Country Link
US (1) US4242692A (fr)
CA (1) CA1138992A (fr)
DE (1) DE2922456A1 (fr)
FR (1) FR2427663A1 (fr)
GB (1) GB2022920B (fr)
NL (1) NL7904406A (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4381516A (en) * 1980-04-03 1983-04-26 Matsushita Electric Industrial Co., Ltd. Charge-coupled device having a channel and an electrode for changing a transfer direction of charge signals
JPS58212176A (ja) * 1982-06-02 1983-12-09 Nec Corp 電荷転送装置
US4821081A (en) * 1985-08-27 1989-04-11 Texas Instruments Incorporated Large pitch CCD with high charge transfer efficiency
FR2597647B1 (fr) * 1986-04-18 1992-06-12 Thomson Csf Registre a decalage a transfert de charge muni d'un dispositif de lecture en tension sur diode flottante
US4987466A (en) * 1988-06-07 1991-01-22 Kabushiki Kaisha Toshiba Solid state image sensor
US5182622A (en) * 1989-02-14 1993-01-26 Sony Corporation Charge coupled device imager having multichannel readout structure
JP2969702B2 (ja) * 1989-02-14 1999-11-02 ソニー株式会社 固体撮像素子
US5514886A (en) * 1995-01-18 1996-05-07 Eastman Kodak Company Image sensor with improved output region for superior charge transfer characteristics
US5705836A (en) * 1995-05-22 1998-01-06 Dalsa, Inc. Efficient charge transfer structure in large pitch charge coupled device
US5760431A (en) * 1995-11-29 1998-06-02 Massachusetts Institute Of Technology Multidirectional transfer charge-coupled device
KR100192328B1 (ko) * 1996-04-03 1999-06-15 구본준 양방향 수평전하 전송소자
US6121158A (en) * 1997-08-13 2000-09-19 Sony Corporation Method for hardening a photoresist material formed on a substrate
JP3248470B2 (ja) * 1997-11-21 2002-01-21 日本電気株式会社 電荷転送装置および電荷転送装置の製造方法
GB2551108A (en) * 2016-05-06 2017-12-13 Teledyne E2V (Uk) Ltd Image sensor

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2099474A1 (fr) * 1970-07-20 1972-03-17 Gen Electric
US3967306A (en) * 1973-08-01 1976-06-29 Trw Inc. Asymmetrical well charge coupled device
FR2319955A1 (fr) * 1975-07-31 1977-02-25 Sony Corp Dispositif a couplage de charge
FR2362489A1 (fr) * 1976-08-20 1978-03-17 Sony Corp Procede de fabrication d'un dispositif a transfert de charges et dispositif obtenu
FR2368145A1 (fr) * 1976-10-14 1978-05-12 Sony Corp Procede de fabrication d'un dispositif a transfert de charge
FR2387518A1 (fr) * 1977-04-11 1978-11-10 Rca Corp Structure de changement de direction pour dispositif a couplage de charge

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3921194A (en) * 1970-07-20 1975-11-18 Gen Electric Method and apparatus for storing and transferring information
US3971003A (en) * 1974-11-18 1976-07-20 Rca Corporation Charge coupled device imager

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2099474A1 (fr) * 1970-07-20 1972-03-17 Gen Electric
US3967306A (en) * 1973-08-01 1976-06-29 Trw Inc. Asymmetrical well charge coupled device
FR2319955A1 (fr) * 1975-07-31 1977-02-25 Sony Corp Dispositif a couplage de charge
FR2362489A1 (fr) * 1976-08-20 1978-03-17 Sony Corp Procede de fabrication d'un dispositif a transfert de charges et dispositif obtenu
FR2368145A1 (fr) * 1976-10-14 1978-05-12 Sony Corp Procede de fabrication d'un dispositif a transfert de charge
FR2387518A1 (fr) * 1977-04-11 1978-11-10 Rca Corp Structure de changement de direction pour dispositif a couplage de charge

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IBM TECHNICAL DISCLOSURE BULLETIN, vol. 20, no. 5, octobre 1977, pages 2010-2011, New York (USA); *

Also Published As

Publication number Publication date
DE2922456A1 (de) 1979-12-13
FR2427663B1 (fr) 1984-12-28
GB2022920B (en) 1983-02-23
NL7904406A (nl) 1979-12-04
GB2022920A (en) 1979-12-19
US4242692A (en) 1980-12-30
CA1138992A (fr) 1983-01-04

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Legal Events

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