FR2452178B1 - Dispositif semi-conducteur a faible impedance thermique - Google Patents
Dispositif semi-conducteur a faible impedance thermiqueInfo
- Publication number
- FR2452178B1 FR2452178B1 FR8006121A FR8006121A FR2452178B1 FR 2452178 B1 FR2452178 B1 FR 2452178B1 FR 8006121 A FR8006121 A FR 8006121A FR 8006121 A FR8006121 A FR 8006121A FR 2452178 B1 FR2452178 B1 FR 2452178B1
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- low thermal
- thermal impedance
- impedance
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W40/00—Arrangements for thermal protection or thermal control
- H10W40/20—Arrangements for cooling
- H10W40/25—Arrangements for cooling characterised by their materials
- H10W40/258—Metallic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
- H10W72/621—Structures or relative sizes of strap connectors
- H10W72/624—Strap connectors having multiple distinct cores
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/021,488 US4278990A (en) | 1979-03-19 | 1979-03-19 | Low thermal resistance, low stress semiconductor package |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2452178A1 FR2452178A1 (fr) | 1980-10-17 |
| FR2452178B1 true FR2452178B1 (fr) | 1986-04-18 |
Family
ID=21804515
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8006121A Expired FR2452178B1 (fr) | 1979-03-19 | 1980-03-19 | Dispositif semi-conducteur a faible impedance thermique |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4278990A (fr) |
| JP (1) | JPS55133562A (fr) |
| BR (1) | BR8001625A (fr) |
| CH (1) | CH652533A5 (fr) |
| DE (1) | DE3009295A1 (fr) |
| FR (1) | FR2452178B1 (fr) |
| MX (1) | MX148428A (fr) |
Families Citing this family (59)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5032898A (en) * | 1979-12-10 | 1991-07-16 | Amp Incorporated | Electro-optic device assembly having integral heat sink/retention means |
| US4336568A (en) * | 1980-07-24 | 1982-06-22 | Westinghouse Electric Corp. | Packaged solid state power controller with separable mounting for a power switching device, and method of assembly |
| JPS5753947A (en) * | 1980-09-17 | 1982-03-31 | Hitachi Ltd | Transistor and electronic device containing it |
| FR2495846A1 (fr) * | 1980-12-05 | 1982-06-11 | Cii Honeywell Bull | Dispositif de connexion electrique a haute densite de contacts |
| FR2495838A1 (fr) * | 1980-12-05 | 1982-06-11 | Cii Honeywell Bull | Dispositif de refroidissement amovible pour supports de circuits integres |
| WO1982002980A1 (fr) * | 1981-02-27 | 1982-09-02 | Inc Motorola | Module de haute intensite avec conducteurs a multi-niveaux |
| JPS6038867B2 (ja) * | 1981-06-05 | 1985-09-03 | 株式会社日立製作所 | 絶縁型半導体装置 |
| DE3127456A1 (de) * | 1981-07-11 | 1983-02-03 | Brown, Boveri & Cie Ag, 6800 Mannheim | Stromrichteranordnung |
| JPS5846663A (ja) * | 1981-08-29 | 1983-03-18 | ロ−ベルト・ボツシユ・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | 半導体ダイオ−ド薄片を有する整流装置 |
| US4538168A (en) * | 1981-09-30 | 1985-08-27 | Unitrode Corporation | High power semiconductor package |
| DE3143339C2 (de) * | 1981-10-31 | 1987-05-14 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Halbleiteranordnung |
| DE3147789A1 (de) * | 1981-12-03 | 1983-06-09 | Brown, Boveri & Cie Ag, 6800 Mannheim | Leistungsmodul und verfahren zu seiner herstellung |
| DE3147790A1 (de) * | 1981-12-03 | 1983-06-09 | Brown, Boveri & Cie Ag, 6800 Mannheim | Leistungsmodul und verfahren zu seiner herstellung |
| US4634638A (en) * | 1981-12-17 | 1987-01-06 | International Business Machines Corporation | High melting point copper-gold-tin brazing alloy for chip carriers |
| US4583283A (en) * | 1982-03-26 | 1986-04-22 | Motorola, Inc. | Electrically isolated semiconductor power device |
| US4510519A (en) * | 1982-03-26 | 1985-04-09 | Motorola, Inc. | Electrically isolated semiconductor power device |
| US4594770A (en) * | 1982-07-15 | 1986-06-17 | Olin Corporation | Method of making semiconductor casing |
| US4480262A (en) * | 1982-07-15 | 1984-10-30 | Olin Corporation | Semiconductor casing |
| US4529836A (en) * | 1983-07-15 | 1985-07-16 | Sperry Corporation | Stress absorption matrix |
| DE3513530A1 (de) * | 1984-06-01 | 1985-12-05 | Bbc Brown Boveri & Cie | Verfahren zur herstellung von leistungshalbleitermodulen mit isoliertem aufbau |
| JPS611852U (ja) * | 1984-06-08 | 1986-01-08 | 日本インター株式会社 | 複合半導体装置 |
| USD288557S (en) | 1984-09-10 | 1987-03-03 | Motorola, Inc. | Semiconductor housing |
| US4775917A (en) * | 1985-12-03 | 1988-10-04 | Wells Manufacturing Company | Thermal compensated circuit board interconnect apparatus and method of forming the same |
| DE3604882A1 (de) * | 1986-02-15 | 1987-08-20 | Bbc Brown Boveri & Cie | Leistungshalbleitermodul und verfahren zur herstellung des moduls |
| US5012322A (en) * | 1987-05-18 | 1991-04-30 | Allegro Microsystems, Inc. | Semiconductor die and mounting assembly |
| JPS6459947A (en) * | 1987-08-31 | 1989-03-07 | Toshiba Corp | Semiconductor device |
| DE3837920A1 (de) * | 1988-11-09 | 1990-05-10 | Semikron Elektronik Gmbh | Halbleiterelement |
| DE3839383A1 (de) * | 1988-11-22 | 1990-05-23 | Semikron Elektronik Gmbh | Verfahren zum herstellen einer halbleiterbaueinheit und vorrichtung zur durchfuehrung des verfahrens |
| US5182628A (en) * | 1989-06-28 | 1993-01-26 | Hitachi, Ltd. | Semiconductor device having particular solder interconnection arrangement |
| US5148264A (en) * | 1990-05-02 | 1992-09-15 | Harris Semiconductor Patents, Inc. | High current hermetic package |
| DE4240843A1 (de) * | 1992-12-04 | 1994-06-09 | Bosch Gmbh Robert | Anordnung zur Verlustwärmeableitung bei Leistungshalbleiterbauelementen |
| US5563447A (en) * | 1993-09-07 | 1996-10-08 | Delco Electronics Corp. | High power semiconductor switch module |
| US5519253A (en) * | 1993-09-07 | 1996-05-21 | Delco Electronics Corp. | Coaxial switch module |
| US5444295A (en) * | 1993-09-07 | 1995-08-22 | Delco Electronics Corp. | Linear dual switch module |
| KR100322177B1 (ko) | 1993-12-27 | 2002-05-13 | 이누이 도모지 | 내연기관용점화장치 |
| US5539254A (en) * | 1994-03-09 | 1996-07-23 | Delco Electronics Corp. | Substrate subassembly for a transistor switch module |
| US5517059A (en) * | 1994-04-26 | 1996-05-14 | Delco Electronics Corp. | Electron and laser beam welding apparatus |
| US5594355A (en) * | 1994-07-19 | 1997-01-14 | Delta Design, Inc. | Electrical contactor apparatus for testing integrated circuit devices |
| US5717252A (en) * | 1994-07-25 | 1998-02-10 | Mitsui High-Tec, Inc. | Solder-ball connected semiconductor device with a recessed chip mounting area |
| US5956231A (en) * | 1994-10-07 | 1999-09-21 | Hitachi, Ltd. | Semiconductor device having power semiconductor elements |
| US5906310A (en) * | 1994-11-10 | 1999-05-25 | Vlt Corporation | Packaging electrical circuits |
| US5876859A (en) * | 1994-11-10 | 1999-03-02 | Vlt Corporation | Direct metal bonding |
| JP2732823B2 (ja) * | 1995-02-02 | 1998-03-30 | ヴィエルティー コーポレーション | はんだ付け方法 |
| SG59997A1 (en) * | 1995-06-07 | 1999-02-22 | Ibm | Apparatus and process for improved die adhesion to organic chip carries |
| DE19530264A1 (de) * | 1995-08-17 | 1997-02-20 | Abb Management Ag | Leistungshalbleitermodul |
| US5848083A (en) * | 1996-10-24 | 1998-12-08 | Sdl, Inc. | Expansion-matched high-thermal-conductivity stress-relieved mounting modules |
| US6127727A (en) * | 1998-04-06 | 2000-10-03 | Delco Electronics Corp. | Semiconductor substrate subassembly with alignment and stress relief features |
| US5895974A (en) * | 1998-04-06 | 1999-04-20 | Delco Electronics Corp. | Durable substrate subassembly for transistor switch module |
| US6404065B1 (en) | 1998-07-31 | 2002-06-11 | I-Xys Corporation | Electrically isolated power semiconductor package |
| US6316737B1 (en) | 1999-09-09 | 2001-11-13 | Vlt Corporation | Making a connection between a component and a circuit board |
| US6985341B2 (en) * | 2001-04-24 | 2006-01-10 | Vlt, Inc. | Components having actively controlled circuit elements |
| US7443229B1 (en) | 2001-04-24 | 2008-10-28 | Picor Corporation | Active filtering |
| US6731002B2 (en) | 2001-05-04 | 2004-05-04 | Ixys Corporation | High frequency power device with a plastic molded package and direct bonded substrate |
| US6727585B2 (en) | 2001-05-04 | 2004-04-27 | Ixys Corporation | Power device with a plastic molded package and direct bonded substrate |
| DE102004054996B4 (de) * | 2003-12-06 | 2013-07-18 | Schaeffler Technologies AG & Co. KG | Elektronisches Gerät |
| JP4965187B2 (ja) * | 2006-08-09 | 2012-07-04 | 株式会社日立製作所 | 半導体装置 |
| US7875972B2 (en) * | 2009-06-25 | 2011-01-25 | International Business Machines Corporation | Semiconductor device assembly having a stress-relieving buffer layer |
| JP2016161410A (ja) * | 2015-03-02 | 2016-09-05 | 株式会社東芝 | 歪検出素子、圧力センサ及びマイクロフォン |
| DE112015007166B4 (de) | 2015-12-04 | 2024-08-29 | Mitsubishi Electric Corporation | Leistungshalbleitervorrichtung |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3089067A (en) * | 1957-09-30 | 1963-05-07 | Gen Motors Corp | Semiconductor device |
| FR1357210A (fr) * | 1962-05-10 | 1964-04-03 | Bosch Gmbh Robert | Nouveau dispositif à semi-conducteur |
| US3274456A (en) * | 1962-11-21 | 1966-09-20 | Gen Instrument Corp | Rectifier assembly and method of making same |
| US3258661A (en) * | 1962-12-17 | 1966-06-28 | Sealed semiconductor device | |
| FR1553893A (fr) * | 1967-11-28 | 1969-01-17 | ||
| US3593070A (en) * | 1968-12-17 | 1971-07-13 | Texas Instruments Inc | Submount for semiconductor assembly |
| DE1815989A1 (de) * | 1968-12-20 | 1970-07-02 | Semikron Gleichrichterbau | Halbleiter-Anordnung |
| US3609471A (en) * | 1969-07-22 | 1971-09-28 | Gen Electric | Semiconductor device with thermally conductive dielectric barrier |
| US3699402A (en) * | 1970-07-27 | 1972-10-17 | Gen Electric | Hybrid circuit power module |
| JPS5228547B2 (fr) * | 1972-07-10 | 1977-07-27 | ||
| DE2337694C2 (de) * | 1973-07-25 | 1984-10-25 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Halbleitergleichrichteranordnung hoher Strombelastbarkeit |
| US4009485A (en) * | 1974-12-23 | 1977-02-22 | General Electric Company | Semiconductor pellet assembly mounted on ceramic substrate |
| DE7512573U (de) * | 1975-04-19 | 1975-09-04 | Semikron Gesellschaft Fuer Gleichri | Halbleitergleichrichteranordnung |
| US3994430A (en) * | 1975-07-30 | 1976-11-30 | General Electric Company | Direct bonding of metals to ceramics and metals |
| DE2617335A1 (de) * | 1976-04-21 | 1977-11-03 | Siemens Ag | Halbleiterbauelement |
| DE2731211A1 (de) * | 1977-07-11 | 1979-01-25 | Semikron Gleichrichterbau | Halbleiterbaueinheit |
-
1979
- 1979-03-19 US US06/021,488 patent/US4278990A/en not_active Expired - Lifetime
-
1980
- 1980-03-10 CH CH1872/80A patent/CH652533A5/de not_active IP Right Cessation
- 1980-03-11 DE DE19803009295 patent/DE3009295A1/de not_active Withdrawn
- 1980-03-17 BR BR8001625A patent/BR8001625A/pt unknown
- 1980-03-18 JP JP3348180A patent/JPS55133562A/ja active Pending
- 1980-03-18 MX MX181628A patent/MX148428A/es unknown
- 1980-03-19 FR FR8006121A patent/FR2452178B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE3009295A1 (de) | 1980-10-02 |
| JPS55133562A (en) | 1980-10-17 |
| BR8001625A (pt) | 1980-11-18 |
| MX148428A (es) | 1983-04-20 |
| CH652533A5 (de) | 1985-11-15 |
| FR2452178A1 (fr) | 1980-10-17 |
| US4278990A (en) | 1981-07-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |