FR2462779A1 - Methode de fabrication de transistors vmos - Google Patents

Methode de fabrication de transistors vmos Download PDF

Info

Publication number
FR2462779A1
FR2462779A1 FR8016208A FR8016208A FR2462779A1 FR 2462779 A1 FR2462779 A1 FR 2462779A1 FR 8016208 A FR8016208 A FR 8016208A FR 8016208 A FR8016208 A FR 8016208A FR 2462779 A1 FR2462779 A1 FR 2462779A1
Authority
FR
France
Prior art keywords
layer
conductivity type
epitaxial layer
region
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8016208A
Other languages
English (en)
French (fr)
Other versions
FR2462779B3 (2
Inventor
Leslie Miskin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of FR2462779A1 publication Critical patent/FR2462779A1/fr
Application granted granted Critical
Publication of FR2462779B3 publication Critical patent/FR2462779B3/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/644—Anisotropic liquid etching

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Element Separation (AREA)
FR8016208A 1979-07-28 1980-07-23 Methode de fabrication de transistors vmos Granted FR2462779A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2930780A DE2930780C2 (de) 1979-07-28 1979-07-28 Verfahren zur Herstellung eines VMOS-Transistors

Publications (2)

Publication Number Publication Date
FR2462779A1 true FR2462779A1 (fr) 1981-02-13
FR2462779B3 FR2462779B3 (2) 1982-04-02

Family

ID=6077092

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8016208A Granted FR2462779A1 (fr) 1979-07-28 1980-07-23 Methode de fabrication de transistors vmos

Country Status (6)

Country Link
JP (1) JPS5621373A (2)
DE (1) DE2930780C2 (2)
FR (1) FR2462779A1 (2)
GB (1) GB2055247B (2)
IE (1) IE50027B1 (2)
IT (1) IT1194673B (2)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2570880A1 (fr) * 1984-09-27 1986-03-28 Rca Corp Procede de fabrication d'un transistor a effet de champ a grille isolee et transistor ainsi obtenu
US4748103A (en) * 1986-03-21 1988-05-31 Advanced Power Technology Mask-surrogate semiconductor process employing dopant protective region
GB2199694A (en) * 1986-12-23 1988-07-13 Philips Electronic Associated A method of manufacturing a semiconductor device
US5023196A (en) * 1990-01-29 1991-06-11 Motorola Inc. Method for forming a MOSFET with substrate source contact
MY107475A (en) * 1990-05-31 1995-12-30 Canon Kk Semiconductor device and method for producing the same.
DE4435458C2 (de) * 1994-10-04 1998-07-02 Siemens Ag Durch Feldeffekt steuerbares Halbleiterbauelement
DE69806484D1 (de) 1998-11-17 2002-08-14 St Microelectronics Srl Methode zur Herstellung von einem MOSFET mit einem vertikalen Kanal

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2076037B1 (2) * 1970-01-12 1975-01-10 Ibm
US4219835A (en) * 1978-02-17 1980-08-26 Siliconix, Inc. VMOS Mesa structure and manufacturing process

Also Published As

Publication number Publication date
IT1194673B (it) 1988-09-22
IE50027B1 (en) 1986-02-05
DE2930780A1 (de) 1981-01-29
GB2055247A (en) 1981-02-25
DE2930780C2 (de) 1982-05-27
IT8023733A0 (it) 1980-07-28
IE801543L (en) 1981-01-28
FR2462779B3 (2) 1982-04-02
JPS5621373A (en) 1981-02-27
GB2055247B (en) 1983-08-24

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